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Results 1 to 25 of 148

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Structural properties of Ge doped CuGaSe2 films studied by Raman and Photoluminescence spectroscopyTHEODOROPOULOU, S; PAPADIMITRIOU, D; DOKA, S et al.Thin solid films. 2007, Vol 515, Num 15, pp 5904-5908, issn 0040-6090, 5 p.Conference Paper

EPR g factors and tetragonal distortion for the isoelectronic Ni+ and Cu2+ centers in the CuGaSe2 crystalFENG, W. L; LI, X. M; ZHENG, W. C et al.Journal of magnetism and magnetic materials. 2011, Vol 323, Num 5, pp 528-531, issn 0304-8853, 4 p.Article

Effect of Cu excess on three-stage CuGaSe2 thin films using in-situ process controlsCABALLERO, R; SIEBENTRITT, S; SAKURAI, K et al.Thin solid films. 2007, Vol 515, Num 15, pp 5862-5866, issn 0040-6090, 5 p.Conference Paper

Phase diagrams of the (Cu2Se, CuSe)-CuGaSe2 system and the crystal growth of CuGaSe2 by the solution methodJITSUKAWA, H; MATSUSHITA, H; TAKIZAWA, T et al.Journal of crystal growth. 1998, Vol 186, Num 4, pp 587-593, issn 0022-0248Article

Photoluminescence excitation spectroscopy of highly compensated CuGaSe2 : Advanced optical diagnostics of surfaces, nanostructures and ultrathin filmsSIEBENTRITT, Susanne; PAPATHANASIOU, Niklas; LUX-STEINER, Martha et al.Physica status solidi. B. Basic research. 2005, Vol 242, Num 13, pp 2627-2632, issn 0370-1972, 6 p.Conference Paper

Phase relations in the ternary Cu-Ga-In systemPURWINS, M; ENDERLE, R; SCHMID, M et al.Thin solid films. 2007, Vol 515, Num 15, pp 5895-5898, issn 0040-6090, 4 p.Conference Paper

Spatial variations of optoelectronic properties in single crystalline CuGaSe2 thin films studied by photoluminescenceLARSEN, JesK; GÜTAY, Levent; AIDA, Yasuhiro et al.Thin solid films. 2011, Vol 519, Num 21, pp 7332-7336, issn 0040-6090, 5 p.Conference Paper

Synthesis and transport properties of prospective photovoltaic systems related to CuInSe2 and CuGaSe2LISNYAK, Vladyslav V; STUS, Nataliya V; MARIYCHUK, Ruslan T et al.Solar energy materials and solar cells. 2003, Vol 76, Num 4, pp 553-562, issn 0927-0248, 10 p.Article

In situ investigation of the selenization kinetics of Cu-Ga precursors using time-resolved high-temperature X-ray diffractionKIM, W. K; PAYZANT, E. A; ANDERSON, T. J et al.Thin solid films. 2007, Vol 515, Num 15, pp 5837-5842, issn 0040-6090, 6 p.Conference Paper

Kinetics of the reactive crystallization of CuInSe2 and CuGaSe2 chalcopyrite films for solar cell applicationsPURWINS, M; WEBER, A; BERWIAN, P et al.Journal of crystal growth. 2006, Vol 287, Num 2, pp 408-413, issn 0022-0248, 6 p.Conference Paper

CuGaSe2-CuGa3Se5 phase transition in CCSVT-grown thin filmsLEHMANN, S; BÄR, M; FISCHER, Ch.-H et al.Thin solid films. 2006, Vol 511-12, pp 623-627, issn 0040-6090, 5 p.Conference Paper

Polariton emission from CuGaSe2 crystalsSYRBU, N. N; TIGINYANU, I. M; URSAKI, V. V et al.Physica. B, Condensed matter. 2005, Vol 365, Num 1-4, pp 43-46, issn 0921-4526, 4 p.Article

On the shape of the close-to-band-edge photoluminescent emission spectrum in compensated CuGaSe2KRUSTOK, J; RAUDOJA, J; YAKUSHEV, M et al.Physica status solidi. A. Applied research. 1999, Vol 173, Num 2, pp 483-490, issn 0031-8965Article

Microstructural properties of CVD-grown CuGaSe2 based thin film solar cellsFUERTES MARRON, D; MEEDER, A; BLOECK, U et al.Thin solid films. 2003, Vol 431-32, pp 237-241, issn 0040-6090, 5 p.Conference Paper

First-principles investigation of structural phase transitions and electronic properties of CuGaSe2 up to 100 GPaXUE, Hong-Tao; TANG, Fu-Ling; LU, Wen-Jiang et al.Computational materials science. 2013, Vol 67, pp 21-26, issn 0927-0256, 6 p.Article

Photoluminescence study of Si doped and undoped Chalcopyrite CuGaSe2 thin filmsTHIRU, Sathiabama; FUJITA, Miki; KAWAHARAZUKA, Atsushi et al.Applied physics. A, Materials science & processing (Print). 2013, Vol 113, Num 2, pp 257-261, issn 0947-8396, 5 p.Article

Role of substrate temperature on the structural, morphological and optical properties of CuGaSe2 thin films grown by Pulsed Electron Deposition techniqueBRONZONI, Matteo; STEFANCICH, Marco; RAMPINO, Stefano et al.Thin solid films. 2012, Vol 520, Num 24, pp 7054-7061, issn 0040-6090, 8 p.Article

Current―voltage analysis of the record-efficiency CuGaSe2 solar cell: Application of the current separation method and the interface recombination modelSAAD, M; KASSIS, A.Solar energy materials and solar cells. 2011, Vol 95, Num 7, pp 1927-1931, issn 0927-0248, 5 p.Article

MOVPE of CuGaSe2 on GaAs in the presence of a CuxSe secondary phaseGÜTAY, Levent; LARSEN, Jes K; GUILLOT, Jerome et al.Journal of crystal growth. 2011, Vol 315, Num 1, pp 82-86, issn 0022-0248, 5 p.Conference Paper

Reaction kinetics of CuGaSe2 formation from a GaSe/CuSe bilayer precursor filmKIM, W. K; PAYZANT, E. A; KIM, S et al.Journal of crystal growth. 2008, Vol 310, Num 12, pp 2987-2994, issn 0022-0248, 8 p.Article

Research in solar cell technologies at Tallinn University of TechnologyMELLIKOV, E; ALTOSAAR, M; EMITS, K et al.Thin solid films. 2008, Vol 516, Num 20, pp 7125-7134, issn 0040-6090, 10 p.Conference Paper

Electrical properties of CuGaSe2 single crystals and polycrystalline coevaporated thin filmsAMARA, A; REZAIKI, W; FERDI, A et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 4, pp 1138-1146, issn 1862-6300, 9 p.Article

Acceptor activation energies in epitaxial CuGaSe2 grown by MOVPEGERHARD, A; HARNEIT, W; BREHME, S et al.Thin solid films. 2001, Vol 387, Num 1-2, pp 67-70, issn 0040-6090Conference Paper

CVD of CuGaSe2 for thin film solar cells with various transport agentsFISCHER, D; MEYER, N; KUCZMIK, M et al.Solar energy materials and solar cells. 2001, Vol 67, Num 1-4, pp 105-112, issn 0927-0248Conference Paper

Excited-state spectroscopy of an effective-mass-like level in Cu-rich CuGaSe2KA, O; YAMADA, A.Thin solid films. 2000, Vol 361-62, pp 509-513, issn 0040-6090Conference Paper

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