CLAQUAGE ELECTRIQUE DU MILIEU D'UN LASER A PHOTOIONISATION AU CO₂: INFLUENCE SUR LA GENERATION ET VISUALISATION DE SON DEVELOPPEMENTGALAKTIONOV II; GORELOV V YU.1978; ZH. TEKH. FIZ.; SUN; DA. 1978; VOL. 48; NO 10; PP. 2143-2145; BIBL. 7 REF.Article

"ELECTROFORMED" BREAKDOWN IN THIN INSULATING FILMS.AGARWAL VK.1976; THIN SOLID FILMS; NETHERL.; DA. 1976; VOL. 33; NO 3; PP. L27-L30; BIBL. 10 REF.Article

SOME ASPECTS OF ELECTRICALLY-INITIATED SECOND BREAKDOWN IN BIPOLAR TRANSISTORS.PIORO Z; SWIT A.1975; BULL. ACAD. POLON. SCI., SCI. TECH.; POLOGNE; DA. 1975; VOL. 23; NO 10; PP. 91-98; ABS. RUSSE; BIBL. 7 REF.Article

DEUXIEME DISRUPTION DANS LES TRANSISTORS BIPOLAIRESPIORO Z; SWIT A.1975; ARCH. ELEKTROTECH.; POLSKA; DA. 1975; VOL. 93; NO 3; PP. 503-519; ABS. RUSSE ANGL.; BIBL. 14 REF.Article

TRANSISTOR BASE-EMITTER JUNCTION PROTECTION IMPROVES RELIABILITYCORNISH LS.1973; ELECTRON. ENGNG; G.B.; DA. 1973; VOL. 45; NO 546; PP. 44-46; BIBL. 6 REF.Serial Issue

AN UNUSUAL SURFACE BREAKDOWN PHENOMENA IN LATERAL TRANSISTORSLAST JD; LUCAS DW.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 9; PP. 1084-1086; H.T. 2; BIBL. 3 REF.Serial Issue

BOUNDARY CONDITIONS BETWEEN CURRENT MODE AND THERMAL MODE SECOND BREAKDOWN IN EPITAXIAL PLANAR TRANSISTORS.KOYANAGI K; HANE K; SUZUKI T et al.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 6; PP. 672-678; BIBL. 17 REF.Article

ELECTROSTATIC DISRUPTION OF LUNAR DUST PARTICLES.RHEE JW.1976; LECTURE NOTES PHYS.; GERM.; DA. 1976; VOL. 48; PP. 238-240; BIBL. 10 REF.; (INTERPLANET. DUST ZODIACAL LIGHT. PROC. IAU-COLLOQ. 31; HEIDELBERG; 1975)Conference Paper

CRITERE DE DISRUPTION DES DIELECTRIQUES PAR UNE IMPULSION PUISSANTE DE RAYONNEMENT OPTIQUEZAKHAROV SI.1976; ZH. EKSPER. TEOR. FIZ.; S.S.S.R.; DA. 1976; VOL. 71; NO 5; PP. 1863-1872; ABS. ANGL.; BIBL. 18 REF.Article

CALCULATION OF THE BREAKDOWN CHARACTERISTICS OF BIPOLAR TRANSISTORS USING A TWO-DIMENSIONAL MODEL.REIN HM.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 2; PP. 145-147; H.T. 1; BIBL. 6 REF.Article

ION-IMPLANTATION EFFECT ON TIME-DEPENDENT BREAKDOWN IN SIO₂.LI SP.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 11; PP. 4833-4834; BIBL. 6 REF.Article

SECOND BREAKDOWN AND DAMAGE IN 1N4148 FROM OSCILLATING ELECTRICAL TRANSIENTS.KALAB B.1975; I.E.E.E. TRANS. NUCL. SCI.; U.S.A.; DA. 1975; VOL. 22; NO 4; PP. 2006-2009; BIBL. 13 REF.Article

IONISATION EN AVALANCHE DANS LES DIELECTRIQUES TRANSPARENTS POUR UNE INTENSITE D'EMISSION OPTIQUE VOISINE DU SEUIL DE DISRUPTIONZAKHAROV SI.1975; ZH. EKSPER TEOR. FIZ.; S.S.S.R.; DA. 1975; VOL. 68; NO 6; PP. 2167-2176; ABS. ANGL.; BIBL. 11 REF.Article

EFFECT OF THIN OXIDE FILM ON BREAKDOWN VOLTAGE OF SILICON N⁺P JUNCTION.MATSUMOTO K; HANETA Y.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 2; PP. 367-368; BIBL. 3 REF.Article

CINETIQUE DE FORMATION DES CASCADES DANS LES CRISTAUXTRUSHIN YU V.1974; FIZ. TVERD. TELA; S.S.S.R.; DA. 1974; VOL. 16; NO 11; PP. 3435-3437; BIBL. 17 REF.Article

PHYSICALS BASIS OF DIELECTRIC BREAKDOWNJONSCHER AK.1980; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1980; VOL. 13; NO 7; PP. L143-L148; BIBL. 2 REF.Article

AVALANCHE BREAKDOWN VOLTAGE OF A MICROWAVE PIN DIODE.RATNAKUMAR KN.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 7; PP. 655-656; BIBL. 3 REF.Article

THE ROLE OF IONIZATION COEFFICIENT IN THE OPERATION OF AVALANCHE DIODES ABOVE BREAKDOWN.ANTOGNETTI P; OLDHAM WG.1975; J. ELECTRON. MATER.; U.S.A.; DA. 1975; VOL. 4; NO 1; PP. 77-90; BIBL. 16 REF.Article

LE PHENOMENE DE SECOND CLAQUAGE DANS LES TRANSISTORS DE PUISSANCE.CHABANNE JP.1974; ELECTRON. MICROELECTRON. INDUSTR.; FR.; DA. 1974; NO 192; PP. 123-131; BIBL. 8 REF.Article

ADMITTANCE DIFFERENTIELLE DES JONCTIONS P-N DU SILICIUM EN REGIME DE CLAQUAGE DE MESOPLASMAPENTYUSH EH V; DEKENA EH K; PURITIS T YA et al.1974; LATV. P.S.R. ZINAT. AKAD. VEST., FIZ. TEH. ZINAT. SER.; S.S.S.R.; DA. 1974; NO 2; PP. 39-44; ABS. ANGL.; BIBL. 5 REF.Article

CONDITIONING OF A VACUUM GAP BY SPARKS AND ION BOMBARDEMENTBEUKEMA GP.1972; PHYSICA; PAYS-BAS; DA. 1972; VOL. 61; NO 2; PP. 259-274; BIBL. 17 REF.Serial Issue

PREBREAKDOWN LIGHT EMISSION IN KCL (100) SUBJECTED TO A NANOSECOND PULSE IN A DIVERGENT FIELDKITANI I; ARII K.1981; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1981; VOL. 14; NO 8; PP. 1545-1549; BIBL. 7 REF.Article

SOURCE SUIVEUSE AVEC PROTECTION DE LA PORTE DU TRANSISTOR A EFFET DE CHAMP VIS-A-VIS DU CLAQUAGEMASHLYKIN AN.1979; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1979; NO 6; PP. 93-94; BIBL. 1 REF.Article

SUR LE CHOIX DE LA TOPOLOGIE D'UN TRANSISTOR STABLE VIS-A-VIS D'UN CLAQUAGE SECONDAIREBAJZDRENKO AA.1978; POLUPROVODN. TEKH. MIKROELEKTRON.; UKR; DA. 1978; NO 28; PP. 95-99; BIBL. 7 REF.Article

EFFECTIVE DEFECT DENSITY FOR MOS BREAKDOWN: DEPENDENCE ON OXIDE THICHNESS.LI SP; MASERJIAN J.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 5; PP. 525-527; BIBL. 13 REF.Article