The Dark Current and Hot Pixel Percentage of James Webb Space Telescope 5 μm Cutoff HgCdTe Detector Arrays as Functions of TemperatureRAUSCHER, Bernard J; LINDLER, Don J; MOTT, David B et al.Publications of the Astronomical Society of the Pacific. 2011, Vol 123, Num 906, pp 953-957, issn 0004-6280, 5 p.Article

Photomultiplier dark pulsesBURNHAM, R; SCARL, D.Applied optics. 1985, Vol 24, Num 2, pp 293-295, issn 0003-6935Article

Dark current analysis of InSb photodiodesHOPKINS, F. K; BOYD, J. T.Infrared physics. 1984, Vol 24, Num 4, pp 391-395, issn 0020-0891Article

Heavy Fullerene for Semi-Conducting Infrared Photo Diodes (1.5―5.0 μm)SHERSTNEV, V. V; CHARYKOV, N. A; SEMENOV, K. N et al.Fullerenes, nanotubes, and carbon nanostructures (Print). 2012, Vol 20, Num 1-8, pp 648-655, issn 1536-383X, 8 p.Article

Dunkelströme in n-Kanal-Volumen CCD = Courants d'obscurité dans un dispositif à transfert de charges à canal n = Dark currents in n channel CCDEIGLER, H; DONTH, H.Nachrichtentechnik. Elektronik. 1984, Vol 34, Num 5, pp 176-177, issn 0323-4657Article

Low-dark-current low-voltage 1.3-1.6 μm avalanche photodiode with high-low electric field profile and separate absorption and multiplication regions by molecular beam epitaxyCAPASSO, F; CHO, A. Y; FOY, P. W et al.Electronics Letters. 1984, Vol 20, Num 15, pp 635-637, issn 0013-5194Article

COMPENSATEUR AUTOMATIQUE DE FOND ET DU COURANT D'OBSCURITE DANS LE COURANT DE SORTIE D'UN PHOTOMULTIPLICATEURZAMETIN VI; PUTILIN AN.1976; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1976; NO 6; PP. 163-166; BIBL. 8 REF.Article

Characterization of generation currents in solid-state imagersHAWKINS, G. A; TRABKA, E. A; NIELSEN, R. L et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 9, pp 1806-1816, issn 0018-9383Article

Beware the claims when shopping for a scientific cameraMCANALLY, Gary.Laser focus world. 2002, Vol 38, Num 1, pp 147-150, issn 1043-8092, 3 p.Article

Exposure Time Dependence of Dark Current in CCD ImagersWIDENHORN, Ralf; DUNLAP, Justin C; BODEGOM, Erik et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 3, pp 581-587, issn 0018-9383, 7 p.Article

Dark Current in Silicon Photomultiplier Pixels: Data and ModelPAGANO, Roberto; CORSO, Domenico; LOMBARDO, Salvatore et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 9, pp 2410-2416, issn 0018-9383, 7 p.Article

Application of plasma-doping (PLAD) technique to reduce dark current of CMOS image sensorsMOON, Chang-Rok; JUNG, Jongwan; KWON, Doo-Won et al.IEEE electron device letters. 2007, Vol 28, Num 2, pp 114-116, issn 0741-3106, 3 p.Article

Experimental observation of the post-annealing effect on the dark current of InGaAs waveguide photodiodesJOO, Hansung; SU CHANG JEON; YONG HWAN KWON et al.Solid-state electronics. 2006, Vol 50, Num 9-10, pp 1546-1550, issn 0038-1101, 5 p.Article

Decrease of Dark Current by Reducing Transfer Transistor Induced Partition Noise With Localized Channel ImplantationPARK, Seong-Hyung; BOK, Jung-Deuk; KWON, Hyuk-Min et al.IEEE electron device letters. 2010, Vol 31, Num 11, pp 1278-1280, issn 0741-3106, 3 p.Article

CONSTRAINING PERTURBATIVE EARLY DARK ENERGY WITH CURRENT OBSERVATIONSALAM, Ujjaini.The Astrophysical journal. 2010, Vol 714, Num 2, pp 1460-1469, issn 0004-637X, 10 p., 1Article

Characterization of a ΔΣ-based CMOS monolithic detectorHANOLD, Brandon J; FIGER, Donald F; ASHE, Brian et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7742, issn 0277-786X, isbn 0-8194-8232-3 978-0-8194-8232-7, 77420A.1-77420A.17Conference Paper

Characterization of multicolor type-II InAs/GaSb strained-layer superlattice photodetectors for use in astronomical observationWONG, Andre F; NELSON, Matthew J; PLIS, Elena A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7742, issn 0277-786X, isbn 0-8194-8232-3 978-0-8194-8232-7, 774223.1-774223.10Conference Paper

Radiation hardness studies of InGaAs photodiodes at 30, 52, & 98 MeV and fluences to 10¹⁰ protons/cm²BAPTISTA, Brian J; MUFSON, Stuart L.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7742, issn 0277-786X, isbn 0-8194-8232-3 978-0-8194-8232-7, 774225.1-774225.11Conference Paper

A versatile wide dynamic range pixel with an improved low light sensitivityCHENG, Hsiu-Yu; COLLINS, Steve.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7113, issn 0277-786X, isbn 978-0-8194-7345-5 0-8194-7345-6, 1Vol, 71130F.1-71130F.9Conference Paper

Characterization of prototype LSST CCDsO'CONNOR, P; FRANK, J; GEARY, J. C et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7021, pp 702106.1-702106.12, issn 0277-786X, isbn 0-8194-7231-X 978-0-8194-7231-1Conference Paper

Field effect on the variable range hopping in amorphous materialsEMELIANOVA, E. V; ARKHIPOV, V. I; ADRIAENSSENS, G. J et al.International symposium on electrets. 1999, pp 59-62, isbn 0-7803-5025-1Conference Paper

Electrochemical polymerization of N-allyl-thionaphthene-indoleCASALBORE MICELI, G; BEGGIATO, G; DI MARCO, P. G et al.Synthetic metals. 1986, Vol 15, Num 1, pp 1-7, issn 0379-6779Article

A TECHNIQUE FOR SUPPRESSING DARK CURRENT GENERATED BY INTERFACE STATE IN BURIED CHANNEL CCD IMAGERSSAKS NS.1980; I.E.E.E. ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 7; PP. 131-133; BIBL. 4 REF.Article

INTRODUCTION A L'ETUDE DU BRUIT DANS LES DISPOSITIFS A COUPLAGE DE CHARGESROLLAND G.1979; CENTRE NATION. ET. SPATIALES, NOTE TECH.; FRA; DA. 1979; NO 90; PP. 1-66; (72 P.); BIBL. 30 REF.Article

CONDUCTION STUDIES IN SILICON NITRIDE: DARK CURRENTS AND PHOTOCURRENTS.DIMARIA DJ; ARNETI PC.1977; I.B.M. J. RES. DEVELOP.; U.S.A.; DA. 1977; VOL. 21; NO 3; PP. 227-244; BIBL. 48 REF.Article