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Theoretical and practical research of the use of inductors for improving DLTS characterization of semiconductorsRANGEL-KUOPPA, Victor-Tapio; TUKIAINEN, Antti; DEKKER, James et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 751-753, issn 0959-8324, 3 p.Conference Paper

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Process-induced defect states in GaAsP light emitting diodesHENNING, I. D; THOMAS, H.Physica status solidi. A. Applied research. 1983, Vol 79, Num 2, pp 567-574, issn 0031-8965Article

ENERGY LEVELS OF SOME RARE-EARTH RELATED IMPURETIES IN GERMANIUMPEARTON SJ.1982; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1982; VOL. 109; NO 2; PP. K135-K138; BIBL. 8 REF.Article

Studies of defect states of ZnO thin films under different annealing conditionsSONG, Hooyoung; KIM, Jae-Hoon; EUN KYU KIM et al.Microelectronics journal. 2009, Vol 40, Num 2, pp 313-315, issn 0959-8324, 3 p.Conference Paper

Utilisation des structures à base de silicium de type M-S-M (Métal-Semiconducteur-Métal) dans la méthode de spectroscopie transitoire des niveaux profondsEREMIN, V. K; IVANOV, A. M; STROKAN, N. B et al.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 9, pp 1613-1617, issn 0015-3222Article

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Deep level transient Fourier spectroscopy (DLTFS). A technique for the analysis of deep level propertiesWEISS, S; KASSING, R.Solid-state electronics. 1988, Vol 31, Num 12, pp 1733-1742, issn 0038-1101Article

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Defect states in p-type silicon crystals induced by plastic deformationONO, H; SUMINO, K.Journal of applied physics. 1985, Vol 57, Num 2, pp 287-292, issn 0021-8979Article

Deep levels in vapor epitaxial indium phosphide grown in the presence of ammoniaSUN, S. W; WESSELS, B. W.Journal of applied physics. 1985, Vol 57, Num 10, pp 4616-4618, issn 0021-8979Article

DLTS determination of the Mo acceptor level in Mo-GaAs_0.6P_0.4 Schottky diodesLOU, J. C; LIN, M. S; WAN, C. P et al.Japanese journal of applied physics. 1983, Vol 22, Num 6, pp 336-337, issn 0021-4922Article

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HEAT DISSIPATION FROM SILICON CHIPS IN A VERTICAL PLATE, ELEVATED PRESSURE COLD WALL SYSTEMREISMAN A; BERKENBLIT M; MERZ CJ et al.1982; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 2; PP. 391-411; BIBL. 4 REF.Article

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ABSOLUTE ENERGY OF THE NITROGEN-RELATED ELECTRON TRAP IN GALLIUM PHOSPHIDEZDANSKY K; KRATENA L; MATYAS M JR et al.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 75; NO 1; PP. 335-339; ABS. RUS; BIBL. 15 REF.Article

DEEP LEVEL STUDIES OF HG_1-XCD_XTE. II: CORRELATION WITH PHOTODIODE PERFORMANCEPOLLA DL; REINE MB; JONES CE et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 8; PP. 5132-5138; BIBL. 15 REF.Article

CHARACTERIZATION OF ELECTRON TRAPS IN ION-IMPLANTED GAAS MESFET'S ON UNDOPED AND CR-DOPED LEC SEMI-INSULATING SUBSTRATESSRIRAM S; DAS MB.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 6; PP. 586-592; BIBL. 21 REF.Article

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Reflectance, transmittance, and absorbance of ZnO implanted with 60 keV Sn ⁺ ionsDANG, Giang T; KAWAHARAMURA, Toshiyuki; NITTA, Noriko et al.Surface & coatings technology. 2013, Vol 229, pp 125-129, issn 0257-8972, 5 p.Conference Paper