Relative concentration and structure of native defects in GaPHÖGLUND, A; CASTLETON, C. W. M; MIRBT, S et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 19, pp 195213.1-195213.16, issn 1098-0121Article

Physical-to-logical mapping of emission data using place-and-routeNICHOLSON, R. A; SURI, H.Microelectronics and reliability. 2006, Vol 46, Num 9-11, pp 1548-1553, issn 0026-2714, 6 p.Conference Paper

Yield prediction using critical area analysis with inline defect dataZHOU, Carl; ROSS, Ron; VICKERY, Carl et al.ASMC proceedings. 2002, pp 82-86, issn 1078-8743, isbn 0-7803-7158-5, 5 p.Conference Paper

On Vertical Drag Defects Formation During Direct Chill (DC) Casting of Aluminum BilletsCARLBERG, Torbjörn; JARFORS, Anders E. W.Metallurgical and materials transactions. B, Process metallurgy and materials processing science. 2014, Vol 45, Num 1, pp 175-181, issn 1073-5615, 7 p.Article

Proceedings of the 26^th International Conference on Defects in Semiconductors 26th ICDSEVANS-FREEMAN, Jan; VERNON-PARRY, Karen; ALLEN, Martin et al.Physica. B, Condensed matter. 2012, Vol 407, Num 15, issn 0921-4526, 242 p.Conference Proceedings

Einsatz der Mikroelektronik bei der Verarbeitung von Vollholz = Utilisation de la microélectronique en transformation de bois massif = Application of micro-electronics for the processing of solid woodFISCHER, R; HARBICH, W; SCHICK, K et al.Holztechnologie. 1985, Vol 26, Num 4, pp 193-196, issn 0018-3881Article

A defect-tolerant reconfigurable nanoarchitecture design for multimedia applicationsLAI, Yeong-Kang; CHEN, Lien-Fei.Colloids and surfaces. A, Physicochemical and engineering aspects. 2008, Vol 313-314, pp 465-468, issn 0927-7757, 4 p.Conference Paper

Differenzierte Analytik der Geometrie und Intensität von Siebmarkierungen = Detailed analysis of geometry and intensity of wire marksPRAST, H; GÖTTSCHING, L.Das Papier (Darmstadt). 1990, Vol 44, Num 10, pp 529-537, issn 0031-1340, 9 p.Article

Industrial ultrasonic tomography: principle practice and limitationTSAO, M. C.Materials evaluation. 1983, Vol 41, Num 11, pp 1248-1254, issn 0025-5327Article

New tools help find flaws = De nouveaux outils permettent de détecter des défautsGODFREY, K. A. JR.Civil engineering ASCE. 1984, Vol 54, Num 9, pp 39-42, issn 0360-0556Article

Automatic defect segmentation of 'Jonagold' apples on multi-spectral images : A comparative studyUNAY, D; GOSSELIN, B.Postharvest biology and technology. 2006, Vol 42, Num 3, pp 271-279, issn 0925-5214, 9 p.Article

Sheet hole and defect identificationLANDRY, H. J.Tappi journal. 2000, Vol 83, Num 5, pp 64-67, issn 0734-1415Article

Correlation between defect structure and electrochemical properties of mixed conducting La_0.1Sr_0.9Co_0.8Fe_0.2O_3―δCHOI, Moon-Bong; JEON, Sang-Yun; SINGH, Bhupendra et al.Acta materialia. 2014, Vol 65, pp 373-382, issn 1359-6454, 10 p.Article

Austrieb und Grat vermeiden = Avoid burr and ribKRELL, V.Plastverarbeiter. 1996, Vol 47, Num 4, pp 38-39, issn 0032-1338Article

Möglichkeiten der funkenerosiven Herstellung von Vergleichsfehlern für die zerstörungsfreie Werkstoffprüfung = Possibilités d'obtenir des défauts artificiels de référence par électroérosion pour le contrôle non destructif des matériaux = Possibilities to produce reference defects for non-destructive inspection by spark-erosionSTADTHAUS, M; WITTIG, G; HENNIG, P et al.Materialprüfung. 1984, Vol 26, Num 8, pp 266-270, issn 0025-5300Article

Câbles d'énergie: théorie de l'échométrie = Power cables : theoretical aspects of echometryKUZYK, Henri.Techniques de l'ingénieur. Génie électrique. 2006, Vol D9, Num D4543, issn 0992-5449, D4543.1-D4543.8Article

Defect detectionVICENTE, Fernando; RISSO, Eduardo.World pipelines. 2008, Vol 8, Num 6, issn 1472-7390, 23-29 [5 p.]Article

A review of laser induced techniques for microelectronic failure analysisPHANG, J. C. H; CHAN, D. S. H; NG, H. Y et al.International Symposium on the Physical & Failure Analysis of Integrated Circuits. 2004, pp 255-261, isbn 0-7803-8454-7, 1Vol, 7 p.Conference Paper

Anomalous effects in silicon solar cell irradiated by 1-MeV protonsKACHARE, R; ANSPAUGH, B. E.Journal of applied physics. 1989, Vol 66, Num 6, pp 2662-2666, issn 0021-8979, 5 p.Article

Defining defect specifications to optimize photomask production and requalificationFIEKOWSKY, Peter.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 63493R.1-63493R.8, issn 0277-786X, isbn 0-8194-6444-9, 2VolConference Paper

Rapid detection of defects in fuel-cell electrodes using infrared reactive-flow-through techniqueDAS, Prodip K; WEBER, Adam Z; BENDER, Guido et al.Journal of power sources (Print). 2014, Vol 261, pp 401-411, issn 0378-7753, 11 p.Article

Charged point defects in semiconductorsSEEBAUER, Edmund G; KRATZER, Meredith C.Materials science & engineering. R, Reports. 2006, Vol 55, Num 3-6, pp 57-149, issn 0927-796X, 93 p.Article

Mask magnification of 8X will be also helpful for EUVLTAKEHISA, Kiwamu; LABORATORY, Ohmi.Proceedings of SPIE, the International Society for Optical Engineering. 2006, issn 0277-786X, isbn 0-8194-5853-8, 2Vol, Part 2, 874-883Conference Paper

Unbinding transition of the interface of a two-dimensional ising-model system with a defect zone in the bulkGUO-MING XIONG.Physical review. B, Condensed matter. 1991, Vol 43, Num 4B, pp 3641-3645, issn 0163-1829, 5 p.Article

Wafer Plane Inspection Evaluated for Photomask ProductionGALLAGHER, Emily; BADGER, Karen; YIBIN TIAN et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7122, issn 0277-786X, isbn 978-0-8194-7355-4 0-8194-7355-3, 71221B.1-71221B.9, 2Conference Paper