E-MRS 2006 symposium L : Characterization of high-k dielectric materialsDABROWSKI, J; HURLEY, P. K; MUROTA, J et al.Materials science in semiconductor processing. 2006, Vol 9, Num 6, issn 1369-8001, 288 p.Conference Proceedings

A novel program-erasable capacitor using high-κ AlN dielectricLAI, C. H; MA, M. W; CHENG, C. F et al.DRC : Device research conference. 2004, pp 77-78, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Modelling charge to breakdown using hydrogen multivibrational excitation (Thin SiO2 and high-K dielectrics)RIBES, G; BRUYERE, S; DENAIS, M et al.International Integrated Reliability Workshop. 2004, pp 1-3, isbn 0-7803-8517-9, 1Vol, 3 p.Conference Paper

Silicide/high-k dielectric structures for nanotransistor gatesHORIN, I. A; KRIVOSPITSKY, A. D; ORLIKOVSKY, A. A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 62600G.1-62600G.8, issn 0277-786X, isbn 0-8194-6325-6, 1VolConference Paper

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Gate dielectric impact for the 65nm digital and mixed signal platform applicationsTAVEL, Brice.Proceedings - Electrochemical Society. 2004, pp 47-59, issn 0161-6374, isbn 1-56677-417-9, 13 p.Conference Paper

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Improved gate-control in InAs nanowire structures by the use of GdScO₃ as a gate dielectricVOLK, C; SCHUBERT, J; WEIS, K et al.Applied physics. A, Materials science & processing (Print). 2010, Vol 100, Num 1, pp 305-308, issn 0947-8396, 4 p.Article

Optimum source/drain overlap design for 16 nm high-k/metal gate MOSFETsJANG, Junyong; LIM, Towoo; KIM, Youngmin et al.Semiconductor science and technology. 2009, Vol 24, Num 10, issn 0268-1242, 105009.1-105009.3Article

Stability of Si impurity in high-κ oxidesUMEZAWA, Naoto; SHIRAISHI, Kenji; CHIKYOW, Toyohiro et al.Microelectronic engineering. 2009, Vol 86, Num 7-9, pp 1780-1781, issn 0167-9317, 2 p.Conference Paper

Fringe-induced barrier lowering (FIBL) included sub-threshold swing model for double-gate MOSFETsPEI LIANG; JIANJUN JIANG; YI SONG et al.Journal of physics. D, Applied physics (Print). 2008, Vol 41, Num 21, issn 0022-3727, 215109.1-215109.4Article

Photoluminescence enhancement of porous silicon prepared with ammonium sulfide pre-treated siliconLEE, Ming-Kwei; TU, Hwai-Fu.Materials science in semiconductor processing. 2007, Vol 10, Num 6, pp 276-280, issn 1369-8001, 5 p.Article

Threshold voltage instability characteristics of HfO₂ dielectrics n-MOSFETsSE JONG RHEE; LEE, Jack C.Microelectronics and reliability. 2005, Vol 45, Num 7-8, pp 1051-1060, issn 0026-2714, 10 p.Article

Dielectrics in SI nano-devices: Roles and challengesQI XIANG; KRIVOKAPIC, Zoran; MASZARA, Witek et al.Proceedings - Electrochemical Society. 2004, pp 86-96, issn 0161-6374, isbn 1-56677-417-9, 11 p.Conference Paper

Band alignment issues in metal/dielectric stacks: A combined photoemission and inverse photoemission study of the HfO₂/Pt and HfO₂/Hf systemsSAYAN, S; BARTYNSKI, R. A; GARFUNKEL, E et al.Proceedings - Electrochemical Society. 2004, pp 255-263, issn 0161-6374, isbn 1-56677-406-3, 9 p.Conference Paper

Substrate integrated NRD (SINRD) guide on high dielectric constant substrate for millimeter wave circuits and systemsCASSIVI, Yves; KE WU.IEEE MTT-S International Microwave Symposium. 2004, isbn 0-7803-8331-1, vol3, 1639-1642Conference Paper

Decisive properties of graphite-filled cement composites for device applicationBHATTACHARYA, S; SACHDEV, V. K; CHATTERJEE, R et al.Applied physics. A, Materials science & processing (Print). 2008, Vol 92, Num 2, pp 417-420, issn 0947-8396, 4 p.Article

180 nm metal gate, high-k dielectric, implant-free III-V MOSFETs with transconductance of over 425 μS/μmHILL, R. J. W; MORAN, D. A. J; LI, X et al.Electronics Letters. 2007, Vol 43, Num 9, pp 543-545, issn 0013-5194, 3 p.Article

Decrease of dielectric loss in CaCu₃Ti₄O₁₂ceramics by La dopingLIXIN FENG; XIAOMING TANG; YUEYUE YAN et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 4, issn 1862-6300, R22-R24Article

Implementation of high-k and metal gate materials for the 45 nm node and beyond: gate patterning developmentBECKX, S; DEMAND, M; BIESEMANS, S et al.Microelectronics and reliability. 2005, Vol 45, Num 5-6, pp 1007-1011, issn 0026-2714, 5 p.Conference Paper

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Inversion mobility and gate leakage in high-k/metal gate MOSFETsKOTLYAR, R; GILES, M. D; MATAGNE, P et al.International Electron Devices Meeting. 2004, pp 391-394, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

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