A violation of Matthiessen's rule in doped cerium heavy fermion alloy near antiferromagnetic quantum critical pointNARIKIYO, O.Journal of the Physical Society of Japan. 1998, Vol 67, Num 5, pp 1795-1796, issn 0031-9015Article

Comment on the anisotropic impurity scattering in superconductorsHARAN, G; NAGI, A. D. S.Solid state communications. 1998, Vol 106, Num 12, pp 775-777, issn 0038-1098Article

Additional scattering effects for mobility degradation in Hf-silicate gate MISFETsYAMAGUCHI, Takeshi; IIJIMA, Ryosuke; INO, Tsunehiro et al.IEDm : international electron devices meeting. 2002, pp 621-624, isbn 0-7803-7462-2, 4 p.Conference Paper

Diffusion suppression in silicon by substitutional C dopingCOWERN, N. E. B; COLOMBEAU, B; ROOZEBOOM, F et al.ESSCIRC 2002 : European solid-state circuits conferenceEuropean solid-state device research conference. 2002, pp 203-206, isbn 88-900847-8-2, 4 p.Conference Paper

Impurity state in the one-dimensional quantum sine-Gordon system (g²=4π)YAMAMOTO, H.Progress of theoretical physics. 1985, Vol 73, Num 6, pp 1573-1576, issn 0033-068XArticle

Impurity scattering in carbon nanotubes : Absence of back scatteringANDO, T; NAKANISHI, T.Journal of the Physical Society of Japan. 1998, Vol 67, Num 5, pp 1704-1713, issn 0031-9015Article

Nonmagnetic impurity in carbon nanotubes with superconducting pair potentialsHARIGAYA, Kikuo.Journal of the Physical Society of Japan. 2000, Vol 69, Num 7, pp 1958-1961, issn 0031-9015Article

BORON DIFFUSION IN SILICON-CONCENTRATION AND ORIENTATION DEPENDENCE, BACKGROUND EFFECTS, AND PROFILE ESTIMATION.FAIR RB.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 6; PP. 800-805; BIBL. 38 REF.Article

DIFFUSION DES DEFECTONS DANS LES CRISTAUX QUANTIQUESPUSHKAROV DI.1975; ZH. EKSPER. TEOR. FIZ.; S.S.S.R.; DA. 1975; VOL. 68; NO 4; PP. 1471-1476; ABS. ANGL.; BIBL. 13 REF.Article

THEORY OF IMPURITY SCATTERING IN DILUTE METAL ALLOYS BASED ON THE MUFFIN-TIN MODEL.HOLZWARTH NAW.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 11; NO 10; PP. 3718-3738; BIBL. 1 P. 1/2Article

CARACTERISTIQUE D'AMPLITUDE ET D'ECHELLE DES FLUCTUATIONS TURBULENTESSHCHERBINA YU A.1975; IN: TURBUL. TECHENIYA. TR. VSES. SEMIN. PROBL. TURBUL. TECHENIJ; MOSKVA; 1972; MOSKVA; NAUKA; DA. 1975; PP. 144-148; BIBL. 11 REF.Conference Paper

ANOMALOUS DIFFUSION IN NONMETALS (ORIGIN AND EFFECTS OF INTERNAL ELECTRIC FIELDS).DEFORD JW; JOHNSON OW.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 3; PP. 1013-1022; BIBL. 11 REF.Article

DIFFUSION DE L'IMPURETE D'UNE SOURCE PONCTUELLE DANS UNE COUCHE LIMITE TURBULENTEYAGLOM AM.1974; IN: TURBUL. TECHENIYA. TR. VSES. SEMIN. PROBL. TURBUL. TECHENIJ; MOSKVA; 1972; MOSKVA; NAUKA; DA. 1974; PP. 62-74; BIBL. 1 P.Conference Paper

DOPAGE DE PBSE PAR LE CUIVREBUDZHAK YA S; PRYAMUKHIN VE; MEL'NIK MV et al.1974; UKRAIN. FIZ. ZH.; S.S.S.R.; DA. 1974; VOL. 19; NO 8; PP. 1339-1342; ABS. ANGL.; BIBL. 5 REF.Article

CENTRAL-CELL CORRECTIONS TO THE THEORY OF IONIZED-IMPURITY SCATTERING OF ELECTRONS IN SILICON.RALPH HI; SIMPSON G; ELLIOTT RJ et al.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 11; NO 8; PP. 2948-2956; BIBL. 30 REF.Article

STUDY OF THE ENHANCED SOLUBILITY AND LATTICE LOCATION OF GOLD IMPURITIES IN A HEAVILY PHOSPHORUS-DIFFUSED LAYER OF SILICON.CHOU SL; GIBBONS JF.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 3; PP. 1197-1203; BIBL. 32 REF.Article

QUASI-PARTICULES BINAIRES DANS LES CRISTAUX QUANTIQUESMEJEROVICH A EH.1975; ZH. EKSPER. TEOR. FIZ.; S.S.S.R.; DA. 1975; VOL. 69; NO 4; PP. 1325-1337; ABS. ANGL.; BIBL. 18 REF.Article

APPARITION D'UNE ONDE DE DIFFUSION NON LINEAIRE DANS LE TRANSPORT ELECTRIQUE DANS LES COUCHES MONOATOMIQUESBOL'SHOV LA; KRIVCHENKOV AA.1975; FIZ. TVERD. TELA; S.S.S.R.; DA. 1975; VOL. 17; NO 3; PP. 649-654; BIBL. 6 REF.Article

Flux-dependent phase shift and periodicity crossover in superconducting nanoloops containing impurity layersZHA, Guo-Qiao; LIANG, Xiao-Meng; ZHOU, Shi-Ping et al.Solid state communications. 2013, Vol 173, pp 42-45, issn 0038-1098, 4 p.Article

Metallic proximity effect in ballistic graphene with resonant scatterers : GrapheneTITOV, M; OSTROVSKY, P. M; GORNYI, I. V et al.Semiconductor science and technology. 2010, Vol 25, Num 3, issn 0268-1242, 034007.1-034007.5Article

Ionic Screening of Charged-Impurity Scattering in GrapheneFANG CHEN; JILIN XIA; NONGJIAN TAO et al.Nano letters (Print). 2009, Vol 9, Num 4, pp 1621-1625, issn 1530-6984, 5 p.Article

Dimensionally hybrid Green's functions for impurity scattering in the presence of interfacesDICK, Rainer.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 9, pp 2973-2976, issn 1386-9477, 4 p.Article

London penetration depth in (BEDT-TTF)₂ superconductorsGIANNETTA, R. W; LAWRIE, D. D; CARRINGTON, A et al.Journal de physique. IV. 2003, Vol 114, pp 211-215, issn 1155-4339, 5 p.Conference Paper

Effect of spin-orbit impurity scattering in d-wave superconductorsKUBOKI, Kazuhiro; YAGI, Toshifumi.Journal of magnetism and magnetic materials. 2001, Vol 226-30, pp 335-336, issn 0304-8853, 1Conference Paper

s- and d-wave solution of Eliashberg equations with finite bandwidthUMMARINO, G. A; GONNELLI, R. S.Physica. C. Superconductivity and its applications. 2000, Vol 341-48, pp 295-296, 1Conference Paper