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Results 1 to 25 of 476

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Gold nanorings as substrates for surface-enhanced Raman scatteringBANAEE, Mohamad G; CROZIER, Kenneth B.Optics letters. 2010, Vol 35, Num 5, pp 760-762, issn 0146-9592, 3 p.Article

Laser-treated substrate with nanoparticles for surface-enhanced Raman scatteringLIN, Cheng-Hsiang; LAN JIANG; JUN ZHOU et al.Optics letters. 2010, Vol 35, Num 7, pp 941-943, issn 0146-9592, 3 p.Article

Macroscopic model for columnar growth of amorphous films by sputter depositionBALES, G. S; ZANGWILL, A.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1991, Vol 9, Num 1, pp 145-149, issn 0734-2101Article

Distant field detecting oriented modeling method of material surface scattering characteristicSHIXUE XU; YANRU CHEN; LINGFEI XU et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7749, issn 0277-786X, isbn 978-0-8194-8240-2 0-8194-8240-4, 1Vol, 774921.1-774921.4Conference Paper

Integral equation based analysis of transient scattering from surfaces with impedance boundary conditionQIN CHEN; MINGYU LU; MICHIELSSEN, Eric et al.IEEE antennas and propagation society international symposiumNational radio science meeting. 2004, pp 3891-3894, isbn 0-7803-8302-8, 4Vol, 4 p.Conference Paper

Why green functions for matching?GARCIA-MOLINER, F.Microelectronics journal. 2005, Vol 36, Num 10, pp 876-881, issn 0959-8324, 6 p.Conference Paper

High efficiency n-ZnO/p-Si core-shell nanowire photodiode based on well-ordered Si nanowire array with smooth surfaceKYUNG YONG KO; HYEMIN KANG; HYUNGJUN KIM et al.Materials science in semiconductor processing. 2014, Vol 27, pp 297-302, issn 1369-8001, 6 p.Article

Optimization of uniaxial stress for high electron mobility on biaxially-strained n-MOSFETsWOOKYUNG SUN; HYUNGSOON SHIN.Solid-state electronics. 2014, Vol 94, pp 23-27, issn 0038-1101, 5 p.Article

Thermal conductivity prediction of a Cu circular nanowireCONGLIANG HUANG; YANHUI FENG; XINXIN ZHANG et al.Physica. E, low-dimentional systems and nanostructures. 2014, Vol 58, pp 111-117, issn 1386-9477, 7 p.Article

Depolarization correction method for ellipsometric measurements of large grain size zinc-oxide filmsPAPA, Z; BUDAI, J; HANYECZ, I et al.Thin solid films. 2014, Vol 571, pp 562-566, issn 0040-6090, 5 p., 3Conference Paper

An in-depth Monte Carlo study of low-field mobility in ultra-thin body DGMOSFETs for modeling purposesROLDAN, J. B; JIMENEZ-MOLINOS, F; BALAGUER, M et al.Solid-state electronics. 2013, Vol 79, pp 92-97, issn 0038-1101, 6 p.Article

Effect of scattering from localized surface plasmon resonance on improving the luminescence efficiency of silicon nitride light-emitting devicesFENG WANG; CHANGRUI REN; DONGSHENG LI et al.Journal of nanoparticle research. 2013, Vol 15, Num 1, issn 1388-0764, 1419.1-1419.7Article

Phase Diagram of the Topological Superfluid 3He Confined in a Nanoscale Slab GeometryLEVITIN, L. V; BENNETT, R. G; CASEY, A et al.Science (Washington, D.C.). 2013, Vol 340, Num 6134, pp 841-844, issn 0036-8075, 4 p.Article

Surface-Roughness-Limited Mean Free Path in Silicon Nanowire Field Effect TransistorsJUNG, Hyo-Eun; MINCHEOL SHIN.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 6, pp 1861-1866, issn 0018-9383, 6 p.Article

Full-Wave Characterization of Rough Terrain Surface Scattering for Forward-Looking Radar ApplicationsDAHAN LIAO; DOGARU, Traian.IEEE transactions on antennas and propagation. 2012, Vol 60, Num 8, pp 3853-3866, issn 0018-926X, 14 p.Article

Resistivity of sub-50 nm copper lines epitaxially grown on Si(100) substrateWANG, Pei-I; FREY, Michael D; WASHINGTON, Morris et al.Thin solid films. 2012, Vol 520, Num 19, pp 6106-6108, issn 0040-6090, 3 p.Article

Ultrafast Surface Carrier Dynamics in the Topological Insulator Bi2Te3HAJLAOUI, M; PAPALAZAROU, E; PERFETTI, L et al.Nano letters (Print). 2012, Vol 12, Num 7, pp 3532-3536, issn 1530-6984, 5 p.Article

Scattering of O2 from a graphite surfaceHAYES, W. W; OH, Junepyo; KONDO, Takahiro et al.Journal of physics. Condensed matter (Print). 2012, Vol 24, Num 10, issn 0953-8984, 104010.1-104010.9Article

Disaster Monitoring by Fully Polarimetric SAR Data Acquired With ALOS-PALSARYAMAGUCHI, Yoshio.Proceedings of the IEEE. 2012, Vol 100, Num 10, pp 2851-2860, issn 0018-9219, 10 p.Article

Scattering of current carriers on a Mo(110) surface covered with hydrogen and deuterium submonolayersPANCHENKO, O. A; SOLOGUB, S. V; BORDENJUK, I. V et al.Surface science. 2011, Vol 605, Num 13-14, pp 1287-1290, issn 0039-6028, 4 p.Article

Fast atom diffraction during grazing scattering from surfacesWINTER, H; SCHÜLLER, A.Progress in surface science. 2011, Vol 86, Num 9-10, pp 169-221, issn 0079-6816, 53 p.Article

Surface Faceting Dependence of Thermal Transport in Silicon NanowiresSANSOZ, Frederic.Nano letters (Print). 2011, Vol 11, Num 12, pp 5378-5382, issn 1530-6984, 5 p.Article

Raman scattering analysis of Cu-poor Cu(In,Ga)Se2 cells fabricated on polyimide substrates: Effect of Na content on microstructure and phase structureIZQUIERDO-ROCA, V; CABALLERO, R; FONTANE, X et al.Thin solid films. 2011, Vol 519, Num 21, pp 7300-7303, issn 0040-6090, 4 p.Conference Paper

Effective Mobility in Nanowire FETs Under Quasi-Ballistic ConditionsGNANI, Elena; GNUDI, Antonio; REGGIANI, Susanna et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 1, pp 336-344, issn 0018-9383, 9 p.Article

Modelling of the hole mobility in p-channel MOS transistors fabricated on (1 1 0) oriented silicon wafersGAUBERT, Philippe; TERAMOTO, Akinobu; OHMI, Tadahiro et al.Solid-state electronics. 2010, Vol 54, Num 4, pp 420-426, issn 0038-1101, 7 p.Article

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