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Results 1 to 25 of 355

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The dissociation modes of threading screw dislocations in 4H-SiCONDA, Shoichi; WATANABE, Hiroki; KITOU, Yasuo et al.Philosophical magazine letters. 2013, Vol 93, Num 10-12, pp 591-600, issn 0950-0839, 10 p.Article

Transmission electron microscope study of a threading dislocation with b = [0001] + 〈1100〉 and its effect on leakage in a 4H―SiC MOSFETONDA, Shoichi; WATANABE, Hiroki; KITO, Yasuo et al.Philosophical magazine letters. 2013, Vol 93, Num 7-9, pp 439-447, issn 0950-0839, 9 p.Article

Critical layer thickness in compositionally-graded semiconductor layers with non-zero interfacial mismatchAYERS, J. E.Semiconductor science and technology. 2008, Vol 23, Num 4, issn 0268-1242, 045018.1-045018.6Article

Strain distribution and defect analysis in III-nitrides by dynamical AFM analysisMINJ, Albert; CAVALCOLI, Daniela; CAVALLINI, Anna et al.Nanotechnology (Bristol. Print). 2013, Vol 24, Num 14, issn 0957-4484, 145701.1-145701.7Article

Scaling Hetero-Epitaxy from Layers to Three-Dimensional CrystalsFALUB, Claudiu V; VON KÄNEL, Hans; ISA, Fabio et al.Science (Washington, D.C.). 2012, Vol 335, Num 6074, pp 1330-1334, issn 0036-8075, 5 p.Article

Temperature-dependent basic solid state physics photoluminescence measurements on a submicrometer length scale on green light emitting InGaN/GaN quantum wellsDANHOF, J; VIERHEILIG, C; SCHWARZ, U. T et al.Physica status solidi. B. Basic research. 2011, Vol 248, Num 5, pp 1270-1274, issn 0370-1972, 5 p.Article

Raman scattering study of background electron density in InN: a hydrodynamical approach to the LO-phonon-plasmon coupled modesCUSCO, R; ALARCON-LLADO, E; IBANEZ, J et al.Journal of physics. Condensed matter (Print). 2009, Vol 21, Num 41, issn 0953-8984, 415801.1-415801.6Article

Relaxation of compressive strain by inclining threading dislocations in Al0.45Ga0.55N epilayer grown on AIN/sapphire templates using graded-AlxGa1-xN/AlN multi-buffer layersFU, Q. M; PENG, T; MEI, F et al.Journal of physics. D, Applied physics (Print). 2009, Vol 42, Num 3, issn 0022-3727, 035311.1-035311.5Article

Core models of a-edge threading dislocations in wurtzite III(AI,Ga,In)-nitridesKIOSEOGLOU, J; KOMNINOU, Ph; KARAKOSTAS, Th et al.Physica status solidi. A, Applications and materials science (Print). 2009, Vol 206, Num 8, pp 1931-1935, issn 1862-6300, 5 p.Conference Paper

Strain relaxation in AIN/GaN heterostructures grown by molecular beam epitaxyDIMITRNKOPULOS, G. P; KOMNINOU, Ph; KARAKOSTAS, Th et al.Physica status solidi. A, Applications and materials science (Print). 2008, Vol 205, Num 11, pp 2569-2572, issn 1862-6300, 4 p.Conference Paper

HCl defect revelation in 200mm SiGe virtual substrates: A systematic studyHARTMANN, J. M; ABBADIE, A.Thin solid films. 2014, Vol 557, pp 110-114, issn 0040-6090, 5 p.Conference Paper

Catalyst-free growth of InN nanorods by metal-organic chemical vapor deposition : Indium Nitride and Related AlloysMIN HWA KIM; DAE YOUNG MOON; PARK, Jinsub et al.Physica status solidi. A, Applications and materials science (Print). 2012, Vol 209, Num 1, pp 50-55, issn 1862-6300, 6 p.Article

Critical assessment of birefringence imaging of dislocations in 6H silicon carbideLE THI MAI HOA; OUISSE, T; CHAUSSENDE, D et al.Journal of crystal growth. 2012, Vol 354, Num 1, pp 202-207, issn 0022-0248, 6 p.Article

Dislocation reduction in high Al-content AIGaN films for deep ultraviolet light emitting diodesAHMAD, Iftikhar; KRISHNAN, Balakrishnan; BIN ZHANG et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 7, pp 1501-1503, issn 1862-6300, 3 p.Article

Investigation of metamorphic InGaAs quantum wells using N-incorporated buffer on GaAs grown by MBEYUXIN SONG; SHUMIN WANG; XIAOHUI CAO et al.Journal of crystal growth. 2011, Vol 323, Num 1, pp 21-25, issn 0022-0248, 5 p.Conference Paper

Fabrication of Atomically Flat ScAlMgO4 Epitaxial Buffer Layer and Low-Temperature Growth of High-Mobility ZnO FilmsKATASE, Takayoshi; NOMURA, Kenji; OHTA, Hiromichi et al.Crystal growth & design. 2010, Vol 10, Num 3, pp 1084-1089, issn 1528-7483, 6 p.Article

High-Sensitivity Nitride-Based Ultraviolet Photosensors with a Low-Temperature AlGaN InterlayerLEE, K. H; CHANG, P. C; CHANG, S. J et al.Journal of electronic materials. 2010, Vol 39, Num 1, pp 29-33, issn 0361-5235, 5 p.Article

Layer thickness dependent carrier recombination rate in HVPE GaNJARASIUNAS, Kęstutis; MALINAUSKAS, Tadas; NARGELAS, Saulius et al.Physica status solidi. B. Basic research. 2010, Vol 247, Num 7, pp 1703-1706, issn 0370-1972, 4 p.Conference Paper

Threading Screw Dislocations in 4H-SiC Wafer Observed by the Weak-Beam Method in Bragg-Case X-ray TopographyYAMAGUCHI, Hirotaka; MATSUHATA, Hirofumi.Journal of electronic materials. 2010, Vol 39, Num 6, pp 715-718, issn 0361-5235, 4 p.Conference Paper

An investigation of structural properties of GaN films grown on patterned sapphire substrates by MOVPETÖRMÄ, P. T; ALI, M; SVENSK, O et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4911-4915, issn 0921-4526, 5 p.Conference Paper

The influence of mask area ratio on GaN regrowth by epitaxial lateral overgrowthCHANG, Ching-I; LAI, Yen-Lin; LIU, Chuan-Pu et al.The Journal of physics and chemistry of solids. 2008, Vol 69, Num 2-3, pp 420-424, issn 0022-3697, 5 p.Conference Paper

Three-step growth method for high quality AIN epilayersNAKARMI, M. L; CAI, B; LIN, J. Y et al.Physica status solidi. A, Applications and materials science (Print). 2012, Vol 209, Num 1, pp 126-129, issn 1862-6300, 4 p.Article

Analysis of contrasts and identifications of Burgers vectors for basal-plane dislocations and threading edge dislocations in 4H-SiC crystals observed by monochromatic synchrotron X-ray topography in grazing-incidence Bragg-case geometryMATSUHATA, Hirofumi; YAMAGUCHI, Hirotaka; OHNO, Toshiyuki et al.Philosophical magazine (2003. Print). 2012, Vol 92, Num 34-36, pp 4599-4617, issn 1478-6435, 19 p.Article

On triple dislocation nodes observed by TEM in a Ge0.4Si0.6 film grown on a slightly deviating (001)Si substrateNEILY, S; YOUSSEF, S; GUTAKOVSKII, A et al.Philosophical magazine letters. 2011, Vol 91, Num 7-8, pp 510-515, issn 0950-0839, 6 p.Article

Growth behavior and microstructure of ZnO epilayer on γ-LiAlO2(100) substrate by chemical vapor depositionLIUWEN CHANG; CHOU, Mitch M. C; HWANG, Teng-Hsing et al.Physica status solidi. A, Applications and materials science (Print). 2009, Vol 206, Num 2, pp 215-219, issn 1862-6300, 5 p.Conference Paper

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