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kw.\*:("Dispositif temps transit")

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LOW/HIGH-PROFILE TRAPATT STRUCTURE.GORONKIN H.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 19; PP. 400-402; BIBL. 6 REF.Article

Fundamental performance limitations of transit-time devices: a zeroth-order analysisYEN-CHU WANG.International journal of electronics. 1985, Vol 58, Num 6, pp 1037-1040, issn 0020-7217Article

A new process of grid structure formation for end point detection during substrate thinning of transit time devicesAHMAD, S; AKHTAR, J; MUSTAFA, M et al.Microelectronics and reliability. 1985, Vol 25, Num 3, pp 447-450, issn 0026-2714Article

Committee report : transit-time ultrasonic flowmetersJournal - American Water Works Association. 1997, Vol 89, Num 7, pp 104-110, issn 0003-150XArticle

INVESTIGATIONS OF THE FABRICATION OF THIN SILICON FILMS FOR MICROWAVE SEMICONDUCTOR TRANSIT TIME DEVICES.FREYER J.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 9; PP. 1238-1240; BIBL. 8 REF.Article

LOW-VOLTAGE PUNCHTHROUGH INJECTION STRUCTURE.DELAGEBEAUDEUF D.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 10; PP. 166-167Article

SIMPLE TRAPATT CIRCUIT FOR 2 ND-HARMONIC EXTRACTION.CORBEY CD.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 13; PP. 283-284; BIBL. 7 REF.Article

A TECHNIQUE FOR FABRICATING OXIDE PASSIVATED BARITT DIODES.ARMSTRONG BM; MOORE RA; GAMBLE HS et al.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 9; PP. 1462-1463; BIBL. 3 REF.Article

FUNDAMENTAL LIMITATIONS OF THE CONTROLLED AVALANCHE TRANSIT TIME TRANSISTOR (CATT)CROSNIER Y; GERARD H; LEFEBVRE M et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 8; PP. 731-737; BIBL. 10 REF.Article

AMPLIFICATION DES ONDES ELECTROMAGNETIQUES DANS UNE DIODE DE TRANSIT A AVALANCHE DISTRIBUEEKORNAUKHOV AV; SHABANOV VN.1976; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1976; VOL. 19; NO 3; PP. 29-33; BIBL. 9 REF.Article

COMPUTER SIMULATION OF INSTABILITY AND NOISE IN HIGH-POWER AVALANCHE DEVICESGIBLIN RA; SCHERER EF; WIERICH RL et al.1973; I.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 4; PP. 404-418; BIBL. 28 REF.Serial Issue

AN S-BAND CATT.YU SP; CADY WR; TANTRAPORN W et al.sdIN: ACT. SEMICOND. DEV. MICROWAVES INTEGRATED OPT. BIENN. CORNELL ELECTR. ENG. CONF. 5. PROC.; ITHACA, N.Y.; 1975; S.L.; DA. S.D.; PP. 333-342; BIBL. 6 REF.Conference Paper

Design optimization of a single-sided Si/SiGe heterostructure mixed tunnelling avalanche transit time double drift regionMISHRA, J. K; PANDA, A. K; DASH, G. N et al.Semiconductor science and technology. 1997, Vol 12, Num 12, pp 1635-1640, issn 0268-1242Article

Microwave tube development in Germany from 1920-1945DÖRING, H.International journal of electronics. 1991, Vol 70, Num 5, pp 955-978, issn 0020-7217Article

Millimeter-wave heterojunction MITATT diodesDOGAN, N. S; EAST, J. R; ELTA, M. E et al.IEEE transactions on microwave theory and techniques. 1987, Vol 35, Num 12, pp 1308-1316, issn 0018-9480Article

Gas velocity measurements using photothermal deflection spectroscopySELL, J. A.Applied optics. 1985, Vol 24, Num 22, pp 3725-3735, issn 0003-6935Article

Design of a correlation system for speed measurement of rail vehiclesENGELBERG, Thomas.Measurement. 2001, Vol 29, Num 2, pp 157-164, issn 0263-2241Article

A stochastic model for laser transit velocimeter correlograms in flows with high vorticityBALL, G. J.Journal of modern optics (Print). 1988, Vol 35, Num 5, pp 761-782, issn 0950-0340Article

Potential and limitations of Schottky-barrier BARRIT devicesEL-GABALY, M; AL-ZINKY, J.Solid-state electronics. 1984, Vol 27, Num 5, pp 433-440, issn 0038-1101Article

Simultaneous measurements of dynamic values using the transit time methodDAUBARIS, G; KAUSINIS, S; RAGAUSKAS, A et al.IEEE transactions on instrumentation and measurement. 1992, Vol 41, Num 2, pp 251-255, issn 0018-9456Conference Paper

Small-signal charge transport in Schottky-barrier punch-through devicesEL-GABALY, M.Journal of applied physics. 1984, Vol 55, Num 2, pp 571-578, issn 0021-8979Article

Modélisation et réalisation d'oscillateurs ATT de forte puissance dans la fenêtre des 94 GHz en régime d'oscillations continues = Modeling and realization of CW high power ATT oscillators in the 94 GHz windowDALLE, C; LLETI, G; GORAL, D et al.Annales des télécommunications. 1988, Vol 43, Num 5-6, pp 287-298, issn 0003-4347Article

ANALYTIC THEORY FOR SILICON DOUBLE-SIDED N+-N-P-P+ TRAPATT-DIODE STRUCTURESCOTTAM MG.1973; ELECTRON. LETTERS; G.B.; DA. 1973; VOL. 9; NO 16; PP. 353-354; BIBL. 7 REF.Serial Issue

ETUDE EXPERIMENTALE DU TRANSISTOR A AVALANCHE CONTROLEE ET TEMPS DE TRANSIT - C.A.T.T. - MISE EN EVIDENCE DES MECANISMES FONDAMENTAUXGERARD HENRI.1979; ; FRA; DA. 1979; (7)-84 P.-PL.; 30 CM; BIBL. 14 REF.; TH. 3E CYCLE: SCI./LILLE 1/1979Thesis

THE INFLUENCE OF ETCH PROCEDURE ON THE STABILITY OF TRANSIT-TIME DEVICES.DE COGAN D.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 12; PP. 1918-1919; BIBL. 1 REF.Article

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