Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("EFFET TUNNEL")

Filter

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Origin

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 19121

  • Page / 765
Export

Selection :

  • and

INELASTIC TUNNELING ASSISTED BY MOLECULAR IMPURITIESBIRKNER GK; SCHATTKE W.1972; Z. PHYS.; DTSCH.; DA. 1972; VOL. 256; NO 2; PP. 185-198; BIBL. 9 REF.Serial Issue

MICROSCOPIC THEORY OF TUNNELING. GENERAL THEORY AND APPLICATION TO THE STATIC IMPURITYDUKE CB; KLEIMAN GG; STAKELON TE et al.1972; PHYS. REV., B; U.S.A.; DA. 1972; VOL. 6; NO 6; PP. 2389-2409; BIBL. 38 REF.Serial Issue

EFFET TUNNEL INELASTIQUE AUX CONTACTS A BASE DE SODIUMLYSYKH AA; NAJDYUK YU G.1979; FIZ. TVERD. TELA; SUN; DA. 1979; VOL. 21; NO 1; PP. 10-14; BIBL. 13 REF.Article

NONUNIFORM ELECTRIC FIELD EFFECT ON PHONAN-ASSISTED TUNNELING IN SEMICONDUCTORS.YANG E.1975; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1975; VOL. 36; NO 11; PP. 1255-1259; BIBL. 7 REF.Article

DIGITAL INELASTIC ELECTRON TUNNELING SPECTROMETERDARGIS AB.1981; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1981; VOL. 52; NO 1; PP. 46-51; BIBL. 18 REF.Article

A NEW APPROACH TO THE ELASTIC TUNNELING CURRENT IN METAL-INSULATOR-METAL DIODES.ALBRECHT H; KELLER G; THIEME F et al.1977; SURF. SCI.; NETHERL.; DA. 1977; VOL. 69; NO 2; PP. 677-688; BIBL. 11 REF.Article

EFFET TUNNEL EN TENANT COMPTE DE L'ANGLE D'INCIDENCE DE L'ELECTRONSIVERS VN; KRICHEVETS YU M.1976; UKRAIN. FIZ. ZH.; S.S.S.R.; DA. 1976; VOL. 21; NO 12; PP. 2043-2046; ABS. ANGL.; BIBL. 4 REF.Article

ELECTRON TUNNELING IN INDIUM-TIO2:NB SHOTTKY BARRIERSSROUBEK Z; KUBEC F.1973; SOLID STATE COMMUNIC.; G.B.; DA. 1973; VOL. 12; NO 8; PP. 767-770; ABS. ALLEM.; BIBL. 10 REF.Serial Issue

RESONANT TUNNELING IN MIM STRUCTURESLEIPOLD WC; FEUCHTWANG TE.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 5; PP. 507; BIBL. 4 REF.Article

ASYMMETRY IN INELASTIC ELECTRON TUNNELING PEAK INTENSITIESKONKIN MK; MAGNO R; ADLER JG et al.1978; SOLID STATE COMMUNIC.; GBR; DA. 1978; VOL. 26; NO 10; PP. 645-647; BIBL. 7 REF.Article

NEGATIVE RESISTANCE IN A TRIPLE-BARRIER STRUCTURE OF AL-AL2O3.TAKABE S; YASUI K; KANEDA S et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 9; PP. 636-637; BIBL. 8 REF.Article

REFLECTION AT A CURVED DIELECTRIC INTERFACE - ELECTROMAGNETIC TUNNELING.SNYDER AW; LOVE JD.1975; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1975; VOL. 23; NO 1; PP. 134-141; BIBL. 14 REF.Article

THE TEMPERATURE DEPENDENCE OF IMPURITY-ASSISTED TUNNELINGJENNINGS RJ; MERRILL JR.1972; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1972; VOL. 33; NO 6; PP. 1261-1266; BIBL. 6 REF.Serial Issue

RESONANT TUNNELING CURRENT FOR GENERAL JUNCTION POTENTIAL BARRIERAYMERICH HUMET X; SERRA MESTRES F.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 51; NO 2; PP. 583-592; ABS. FRE; BIBL. 9 REF.Article

LEIT EFFECT IN METAL-INSULATOR-SEMICONDUCTOR TUNNEL JUNCTIONSMCCARTHY SL; LAMBE J.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 10; PP. 858-860; BIBL. 18 REF.Article

RESONANT TUNNELING THROUGH SI/SIO2 DOUBLE BARRIERS.HIROSE M; MORITA M; OSAKA Y et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 561-564; BIBL. 11 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

LOW-FIELD TRANSIENT BEHAVIOR OF MNOS DEVICES.MAES HE; VAN OVERSTRAETEN RJ.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 2; PP. 664-666; BIBL. 8 REF.Article

RESONANCE TUNNELING IN MOLECULAR LAYER SYSTEMS. = RESONANCE DE L'EFFET TUNNEL DANS LES SYSTEMES A COUCHE MINCE MOLECULAIRESCHUETT W; KOESTER H; ZUTHER G et al.1976; THIN SOLID FILMS; NETHERL.; DA. 1976; VOL. 31; NO 3; PP. 275-282; BIBL. 21 REF.Article

ELASTIC AND INELASTIC TUNNELLING IN SINGLE-LAYER LANGMUIR FILMSGINNAL TM; OXLEY DP; PRITCHARD RG et al.1980; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1980; VOL. 68; NO 1; PP. 241-256; BIBL. 23 REF.Article

ELECTRON TRANSPORT IN VERY THIN MULTILAYERS OF AL-A1203TAKABE S; YASUI K; KANEDA S et al.1978; INTERN. J. ELECTRON.; GBR; DA. 1978; VOL. 45; NO 3; PP. 257-263; BIBL. 13 REF.Article

CONTRIBUTION A L'ETUDE DE L'EFFET DE TUNNEL RESONNANT DANS LES BARRIERES SCHOTTKY.KOMENAN KOUADJA.1977; ; S.L.; DA. 1977; PP. 1-63; BIBL. 3 P.; (THESE DOCT. SPEC. MATH. APPL., OPTION PHYS. MATH.; PAUL SABATIER TOULOUSE)Thesis

THEORY OF LIGHT EMISSION FROM SMALL PARTICLE TUNNEL JUNCTIONSHONE D; MUEHLSCHLEGEL B; SCALAPINO DJ et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 2; PP. 203-204; BIBL. 4 REF.Article

QUASIPARTICLE HETERODYNE MIXING IN SIS TUNNEL JUNCTIONSRICHARDS PL; SHEN TM; HARRIS RE et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 5; PP. 345-347; BIBL. 9 REF.Article

UNE SPECTROSCOPIE RECENTE EN PHYSIQUE DU SOLIDE: L'EFFET TUNNEL INELASTIQUE.SALACE G.1977; SPECTRA 2000; FR.; DA. 1977; NO 38; PP. 29-36; BIBL. 17 REF.Article

A MODIFIED EXPRESSION FOR THE TUNNELLING EXPONENT IN SCHOTTKY BARRIERSBHATNAGAR PK; SHARMA KK; OJHA VN et al.1982; SOL. CELLS; ISSN 0379-6787; CHE; DA. 1982; VOL. 5; NO 4; PP. 301-304; BIBL. 10 REF.Article

  • Page / 765