Relation between electroabsorption in bulk semiconductors and in quantum wells: the quantum-confined Franz-Keldysh effectMILLER, D. A. B; CHEMLA, D. S; SCHMITT-RINK, S et al.Physical review. B, Condensed matter. 1986, Vol 33, Num 10, pp 6976-6982, issn 0163-1829Article

Effet Franz-Keldysch magnétooptique dans le champ d'une onde lumineuse bichromatique intenseMONOZON, B. S.Fizika tverdogo tela. 1989, Vol 31, Num 5, pp 220-225, issn 0367-3294Article

Observation of Franz-Keldysh oscillations in the stress-modulated spectra of (001) n-type GaAsYICHUN YIN; YAN, D; POLLAK, F. H et al.Physical review. B, Condensed matter. 1991, Vol 43, Num 14, pp 12138-12141, issn 0163-1829, 4 p.Article

Coherent radiation processes in strong fields. II : Washington, DC, June 18-22, 1990JACOBS, Y. L; FUSINA, R; SAENZ, A. W et al.Radiation effects and defects in solids. 1991, Vol 122-23, issn 1042-0150, 367 p., 2Conference Proceedings

Manifestation of the interlayer interaction effects in the electroreflection spectra of (Bi₂Te₃)_x(Bi₂Se₃)_1-x crystalsVELIYULIN, E. I; KAKHRAMANOV, S. S; EVSTIGNEEV, A. M et al.Soviet physics. Semiconductors. 1990, Vol 24, Num 11, pp 1281-1282, issn 0038-5700, 2 p.Article

Optical modulation with a resonant tunnelling diodeMCMEEKIN, S. G; TAYLOR, M. R. S; IRONSIDE, C. N et al.IEE proceedings. Optoelectronics. 1996, Vol 143, Num 1, pp 12-16, issn 1350-2433Article

About the reliability of approximate methods for analysing photoreflectance spectra of semiconductorsNEUMANN, H; BOUAMAMA, K.Crystal research and technology (1979). 1992, Vol 27, Num 6, pp 851-861, issn 0232-1300Article

Franz-Keldysh electrorefraction and electroabsorption in bulk InP and GaAsVAN ECK, T. E; WALPITA, L. M; CHANG, W. S. C et al.Applied physics letters. 1986, Vol 48, Num 7, pp 451-453, issn 0003-6951Article

Analysis of an electro-optical switching device due to intrinsic photoconductivityIVANOV, A. L; HAUG, H.Semiconductor science and technology. 1994, Vol 9, Num 7, pp 1427-1430, issn 0268-1242Article

Photoreflectance measurements of unintentional impurity concentrations in undoped GaAsSYDOR, M; ANGELO, J; MITCHEL, W et al.Journal of applied physics. 1989, Vol 66, Num 1, pp 156-160, issn 0021-8979, 5 p.Article

Photonic switching in GaAlAs optical strip waveguides by photo-induced electroabsorptionFOUCKHARDT, H; EBELING, K. J.Applied physics. B, Photophysics and laser chemistry. 1988, Vol 45, Num 3, pp 163-169, issn 0721-7269Article

Etude des modulateurs à guide d'ondes optiques utilisant l'effet de Frantz-Keldyah, avec une distribution non-uniforme du coefficient d'absorption suivant l'épaisseur du guideSUKHOTIN, S. A; GOLUBEV, V. V.Žurnal tehničeskoj fiziki. 1986, Vol 56, Num 11, pp 2139-2144, issn 0044-4642Article

Density of states and Wannier-Stark levels of superlattices in an electric fieldRITZE, M; HORING, N. J. M; ENDERLEIN, R et al.Physical review. B, Condensed matter. 1993, Vol 47, Num 16, pp 10437-10445, issn 0163-1829Article

E₁ electrolyte electroreflectance of GaAs modeled by Franz-Keldysh theoryBATCHELOR, R. A; HAMNETT, A.Journal of applied physics. 1992, Vol 71, Num 3, pp 1376-1382, issn 0021-8979Article

Photoluminescence of superlattices in gallium arsenide δ-doped with carbonYA ALESHKIN, V; ANSHON, A. V; BATUKOVA, L. M et al.Soviet physics. Semiconductors. 1992, Vol 26, Num 10, pp 1038-1039, issn 0038-5700Article

Strong optical non-linearities for efficient all-optical switching in GaAlAs waveguidesFOUCKHARDT, H; EBELING, K. G.Optics and laser technology. 1986, Vol 18, Num 4, pp 203-207, issn 0030-3992Article

Band-edge photorefractivity in semiconductors : theory and experimentPARTOVI, A; GARMIRE, E. M.Journal of applied physics. 1991, Vol 69, Num 10, pp 6885-6898, issn 0021-8979, 14 p.Article

Electroabsorption by semiconductor microcrystallites in glass: observation of Franz-Keldysh oscillationsCOTTER, D; GIRDLESTONE, H. P.Electronics Letters. 1990, Vol 26, Num 3, pp 183-184, issn 0013-5194, 2 p.Article

Electroabsorption of highly confined systems: theory of the quantum-confined Franz-Keldysh effect in semiconductor quantum wires and dotsMILLER, D. A. B; CHEMLA, D. S; SCHMITT-RINK, S et al.Applied physics letters. 1988, Vol 52, Num 25, pp 2154-2156, issn 0003-6951Article

Absorbeur saturable d'«optique intégrale» basé sur l'effet Franz-KeldyshAVRUTIN, E. A; BUTUSOV, D. M; GOTSADZE, G. G et al.Fizika i tehnika poluprovodnikov. 1987, Vol 21, Num 5, pp 900-903, issn 0015-3222Article

Effet Franz-Keldysch dans les semiconducteurs dans le champ de deux ondes lumineuses intenses en interactionMONOZON, B. S; IGNAT'EVA, L. A.Fizika i tehnika poluprovodnikov. 1986, Vol 20, Num 8, pp 1492-1495, issn 0015-3222Article

Predicted performance of Franz-Keldysg effect optical reflection modulators and comparisons with similar multiple quantum well-based devicesLEESON, M. S; PAYNE, F. P.IEE proceedings. Optoelectronics. 1994, Vol 141, Num 4, pp 257-264, issn 1350-2433Article

Electron subband filling and band renormalization in modulation spectroscopy of single modulation doped heterojunctions and δ-doped structuresTANG, Y. S.Journal of applied physics. 1992, Vol 71, Num 5, pp 2392-2396, issn 0021-8979Article

Photoreflectance study of photovoltage effects in GaAs diode structuresAIRAKSINEN, V. L; LIPSANEN, H. K.Applied physics letters. 1992, Vol 60, Num 17, pp 2110-2112, issn 0003-6951Article

Far-infrared generation at semiconductor surfaces and its spectroscopic applications : Ultrafast optics and electronicsGREENE, B. I; SAETA, P. N; DYKAAR, D. R et al.IEEE journal of quantum electronics. 1992, Vol 28, Num 10, pp 2302-2312, issn 0018-9197Article