LIQUID ENCAPSULATED FLOATING ZONE MELTING OF GAAS.JOHNSON ES.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 30; NO 2; PP. 249-256; BIBL. 12 REF.Article

LIQUID ENCAPSULATED CZOCHRALSKI GROWTH OF 35 MM DIAMETER SINGLE CRYSTALS OF GAPNYGREN SF.1973; J. CRYST. GROWTH; NETHERL.; DA. 1973; VOL. 19; NO 1; PP. 21-32; BIBL. 16 REF.Serial Issue

ETUDE DES PROPRIETES PROTECTRICES DES FONDANTS DANS LA FABRICATION DE INPMARBAKH AL; CHERNOKOV IV.1975; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1975; VOL. 11; NO 10; PP. 1738-1741; BIBL. 10 REF.Article

GROWTH OF GAAS_1-XP_X* CRYSTALS BY PULLING FROM GALLIUM-RICH SOLUTIONSCERRINA F; MARGADONNA D; PERFETTI P et al.1973; J. CRYST. GROWTH; NETHERL.; DA. 1973; VOL. 18; NO 2; PP. 202-204; BIBL. 5 REF.Serial Issue

LEC GROWTH OF LARGE INP SINGLE CRYSTALS.ANTYPAS GA.1976; J. CRYST. GROWTH; NETHERL.; DA. 1976; VOL. 33; NO 1; PP. 174-176; BIBL. 8 REF.Article

ECART A LA STOECHIOMETRIE DES CRISTAUX DE INAS OBTENUS PAR LA METHODE D'ENCAPSULATION LIQUIDEMARBAKH AL; PERMINOVA LG.1975; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1975; VOL. 11; NO 9; PP. 1560-1563; BIBL. 8 REF.Article

HIGH PRESSURE CZOCHRALSKI GROWTH OF FE_1-XS (0<X <OU= 0.1) SINGLE CRYSTALS.BARRACLOUGH KG; GOEBEL H; MEYER A et al.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 26; NO 1; PP. 101-106; BIBL. 12 REF.Article

X-RAY IMAGING TECHNIQUE FOR OBSERVING LIQUID ENCAPSULATION CZOCHRALSKI CRYSTAL GROWTH.PRUETT HD; LIEN SY.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 6; PP. 822-826; BIBL. 5 REF.Article

DIRECT OBSERVATION OF DISLOCATIONS IN A LEC-GAP CRYSTAL BY LIGHT SCATTERING METHOD.TAJIMA M; IIZUKA T.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; NO 4; PP. 651-654; BIBL. 17 REF.Article

CROISSANCE DE MONOCRISTAUX PROFILES DE COMPOSES SE DISSOCIANTEGOROV LP; MIL'VIDSKIJ MG; ZATULOVSKIJ LM et al.1975; KRISTALLOGRAFIJA; S.S.S.R.; DA. 1975; VOL. 20; NO 6; PP. 1273-1277; BIBL. 11 REF.Article

GROWTH OF LOW STRAIN GAP BY LIQUID-ENCAPSULATION, VERTICAL-GRADIENT FREEZE TECHNIQUEBLUM SE; CHICOTKA RJ.1973; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1973; VOL. 120; NO 4; PP. 588-589; BIBL. 5 REF.Serial Issue

A new method to melt Chevrel phase superconducting compoundsGOVINDA RAJAN, K; CHANDRA SHEKAR, N. V; VISWANATH, R. N et al.Journal of physics. D, Applied physics (Print). 1989, Vol 22, Num 8, pp 1205-1209, issn 0022-3727, 5 p.Article

Existence of interstitialcy Zn atoms in GaAs:Zn grown by the liquid-encapsulated Czochralski techniqueKITANO, T; WATANABE, H; MATSUI, J et al.Applied physics letters. 1989, Vol 54, Num 22, pp 2201-2203, issn 0003-6951, 3 p.Article

Growth of low and homogeneous dislocation GaAs crystal by improved LEC techniqueSHIMADA, T; TERASHIMA, K; NAKAJIMA, H et al.Japanese journal of applied physics. 1984, Vol 23, Num 1, pp 23-25, issn 0021-4922Article

Dislocation multiplication in GaAs: inhibition by dopingDJEMEL, A; CASTAING, J; BURLE-DURBEC, N et al.Revue de physique appliquée. 1989, Vol 24, Num 8, pp 779-793, issn 0035-1687, 15 p.Article

Advances in LEC growth of InP crystalsISELER, G. W.Journal of electronic materials. 1984, Vol 13, Num 6, pp 989-1011, issn 0361-5235Article

LIQUID ENCAPSULATED CZOCHRALSKI GROWTH OF GAAS AND GAPRUSS MJ.1972; SOLID STATE TECHNOL.; U.S.A.; DA. 1972; VOL. 15; NO 8; PP. 29-32; BIBL. 15 REF.Serial Issue

LIQUID ENCAPSULATED CZOCHRALSKI PULLING OF INP CRYSTALS.BACHMANN KJ; BUEHLER E; SHAY JL et al.1975; J. ELECTRON. MATER.; U.S.A.; DA. 1975; VOL. 4; NO 2; PP. 389-406; BIBL. 1 P. 1/2Article

TOTAL OXYGEN CONTENT OF GALLIUM PHOSPHIDE GROWN BY THE CZOCHRALSKI TECHNIQUE USING LIQUID ENCAPSULATION.KIM CK.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 1; PP. 243-245; BIBL. 11 REF.Article

Viscous effects in liquid encapsulated liquid bridgesJOHNSON, Duane T.International journal of heat and fluid flow. 2002, Vol 23, Num 6, pp 844-854, issn 0142-727X, 11 p.Article

On the electrical activity of Fe in LEC indium phosphideFORNARI, R.Semiconductor science and technology. 1999, Vol 14, Num 3, pp 246-250, issn 0268-1242Article

Annealing studies on LEC grown SI undoped GaAs single crystalsDURAI, L; RADHAKRISHNAN, J. K; BAGAI, R. K et al.SPIE proceedings series. 1998, pp 304-307, isbn 0-8194-2756-X, 2VolConference Paper

Calculation of the growth velocity for liquid encapsulated Czochralski grown GaAs crystalsKLIMOVITSKY, I. K.Journal of crystal growth. 1993, Vol 132, Num 3-4, pp 614-616, issn 0022-0248Article

Technique for the direct synthesis and growth of indium phosphide by the liquid phosphorus encapsulated Czochralski methodINADA, T; FUJII, T; EGUCHI, M et al.Applied physics letters. 1987, Vol 50, Num 2, pp 86-88, issn 0003-6951Article

Buoyancy-driven flows in crystal-growth meltsLANGLOIS, W. E.Annual review of fluid mechanics. 1985, Vol 17, pp 191-215, issn 0066-4189Article