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TOWARD QUANTUM WELL WIRES: FABRICATION AND OPTICAL PROPERTIESPETROFF PM; GOSSARD AC; LOGAN RA et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 7; PP. 635-638; BIBL. 9 REF.Article

RECTIFICATION IN AL_XGA_1-XAS-GAAS N-N HETEROJUNCTION DEVICESLEE SC; PEARSON GL.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 6; PP. 563-568; BIBL. 14 REF.Article

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VARIATION OF THE IDEALITY FACTOR IN THE CURENT-VOLTAGE CHARACTERISTICS OF DOUBLE-HETEROSTRUCTURE DIODESYANG ES; WU CM; HUNG RY et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 2; PP. 1262-1264; BIBL. 7 REF.Article

ELECTROLUMINESCENCE "A 1 EV" DES DIODES LASER D.H. GAAS/(GA, AL) ASVOILLOT F; BRABANT JC; BROUSSEAU M et al.1980; REV. PHYS. APPL.; ISSN 0035-1687; FRA; DA. 1980; VOL. 15; NO 3; PP. 717-723; ABS. ENG; BIBL. 14 REF.Article

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GAIN SUPPRESSION IN GAAS/ALGAAS TJS LASERSKAWANISHI H; PETERSEN PE.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 6; PP. 823-824; BIBL. 8 REF.Article

(GAAL)AS/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS WITH GRADED COMPOSITION IN THE BASEMILLER DL; ASBECK PM; ANDERSON RJ et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 367-368; BIBL. 7 REF.Article

HIGH-BARRIER CLUSTER-FREE AL_XGA_1-XASALAS-GAAS QUANTUM-WELL HETEROSTRUCTURE LASERCOLEMAN JJ; DAPKUS PD; LAIDIG WD et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 2; PP. 63-65; BIBL. 4 REF.Article

ZUM WACHSTUM VON A^IIIB^V-HALBLEITERN AUS NICHTSTOECHIOMETRISCHEN SCHMELZEN (II). DOTIERUNG VON GAAS UND GA_1-XAL_XAS MIT ZINK = CROISSANCE DE SEMICONDUCTEURS A^IIIB^V A PARTIR DE PRODUITS DE FUSION NON STOECHIOMETRIQUES (II). DOPAGE DE GAAS ET GA_1-XAL_XAS PAR LE ZINCJACOBS K; JACOBS B; BUTTER E et al.1972; KRISTALL U. TECH.; DTSCH.; DA. 1972; VOL. 7; NO 11; PP. 1209-1217; ABS. ANGL.; BIBL. 11 REF.Serial Issue

CHARACTERISTICS AND ANALYSIS OF CHANNELED SUBSTRATE NARROW STRIPE GAAS/GAALAS LASERSCURTIS JP; PLUMB RG; GOODWIN AR et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 5; PP. 3444-3449; BIBL. 9 REF.Article

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MOVPE GROWTH OF GA_1-XAL_XAS-GAAS QUANTUM WELL HETEROSTRUCTURESFRIJLINK PM; MALUENDA J.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 9; PART. 2; PP. L574-L576; BIBL. 4 REF.Article

VARIATION DE LA STRUCTURE DE BANDES DE LA SOLUTION SOLIDE DE GE_2X(GAAS)_1-X EN FONCTION DU DEGRE D'ORDREGUBANOV AI; POLUBOTKO AM.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 10; PP. 1848-1851; BIBL. 5 REF.Article

CALCULATION OF LATERAL CURRENT SPREADING AND SERIES RESISTANCE EFFECTS IN OXIDE STRIPE GEOMETRY GAAS-GAALAS DH LASERSLENGYEL G; MEISSNER P; PATZAK E et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 4; PP. 174-175; BIBL. 14 REF.Article

NEW APPARATUS FOR MULTI-LAYER LIQUID PHASE EPITAXY.KAWAMURA K; YAMAMOTO T.1976; J. CRYST. GROWTH; NETHERL.; DA. 1976; VOL. 32; NO 2; PP. 157-160; BIBL. 9 REF.Article

MULTIPLE LAYER (ALGA) AS-GAAS HETEROJUNCTION LASER DIODES: SYNTHESIS AND MODE CONTROL.LOCKWOOD HF; KRESSEL H.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 27; PP. 97-105; BIBL. 19 REF.Article

THE GROWTH OF A GAAS-GAALAS SUPERLATTICECHANG LL; ESAKI L; HOWARD WE et al.1973; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1973; VOL. 10; NO 1; PP. 11-16; BIBL. 19 REF.Serial Issue

AN ANALYTICAL SOLUTION OF THE LATERAL CURRENT SPEADING AND DIFFUSION PROBLEM IN NARROW OXIDE STRIPE (GAAL)AS/GAAS DH LASERSLENGYEL G; MEISSNER P; PATZAK E et al.1982; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1982; VOL. 30; NO 4; PP. 464-471; BIBL. 25 REF.Article

LUMINESCENCE PROPERTIES OF GAAS-GA_1-XAL_XAS DOUBLE HETEROSTRUCTURES AND MULTIQUANTUM-WELL SUPERLATTICES GROWN BY MOLECULAR BEAM EPITAXYPETROFF PM; WEISBUCH C; DINGLE R et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 12; PP. 965-967; BIBL. 14 REF.Article

MAGNETOSTATIC FIELD EFFECT ON THRESHOLD CURRENT IN A GAAS/AL Y GA_1-YAS DOUBLE-HETEROSTRUCTURE LASERHSIEH HC; LEE GY.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 7; PP. 4414-4417; BIBL. 16 REF.Article

MOBILITY ENHANCEMENT IN INVERTED AL_XGA_1-XAS/GAAS MODULATION DOPED STRUCTURES AND ITS DEPENDENCE ON DONOR-ELECTRON SEPARATIONMORKOC H; DRUMMOND TJ; THORNE RE et al.1981; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 12; PP. L913-L916; BIBL. 14 REF.Article

SELF-ALIGNED GAAS/GAALAS SEMICONDUCTOR LASER WITH LATERAL SPATIAL VARIATION IN IN THICKNESS GROWN BY METALORGANIC-CHEMICAL VAPOR DEPOSITIONFEKETE D; BURNHAM RD; SCIFRES DR et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 8; PP. 607-609; BIBL. 6 REF.Article