Heavy carbon doping of GaAs by MOVPE using a new dopant source CBrCl₃ and characterization of the epilayersUCHIDA, K; BHUNIA, S; SUGIYAMA, N et al.Journal of crystal growth. 2003, Vol 248, pp 124-129, issn 0022-0248, 6 p.Conference Paper

Ab initio calculation of local vibrational modes by the Green's function method. Application to GaAs:C and GaN:AsGÖBEL, C; PETZKE, K; SCHREPEL, C et al.The European physical journal. B, Condensed matter physics. 1999, Vol 11, Num 4, pp 559-564, issn 1434-6028Article

Properties of C-doped LT-GaAs grown by MBE using CBr₄LIU, W. K; BACHER, K; TOWNER, F. J et al.Journal of crystal growth. 1999, Vol 201202, pp 217-220, issn 0022-0248Conference Paper

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A new method for controlled carbon doping in LP-MOVPE of GaAs using TMAs and mixtures of TMGa/TEGaHARDTDEGEN, H; RAAFAT, T; HOLLFELDER, M et al.Journal of crystal growth. 1995, Vol 156, Num 4, pp 333-336, issn 0022-0248Article

Influence of substrate misorientation on carbon incorporation in GaAs by metal organic chemical vapor depositionITO, H; WATANABE, N; NITTONO, T et al.Japanese journal of applied physics. 1994, Vol 33, Num 3B, pp 399-401, issn 0021-4922, 2Article

Influence of hydrogen radicals on the reduction of carbon incorporation into chemical beam epitaxial GaAsGOTO, S; NOMURA, Y; MORISHITA, Y et al.Journal of crystal growth. 1994, Vol 144, Num 3-4, pp 126-132, issn 0022-0248Article

Electrical insulation properties of carbon-controlled semi-insulating GaAsOTOKI, Y; WATANABE, M; TAKAHASHI, S et al.Japanese journal of applied physics. 1993, Vol 32, Num 8, pp 3342-3345, issn 0021-4922, 1Article

High current density carbon-doped strained-layer GaAs (p⁺)-InGaAs(n⁺)-GaAs(n⁺) p-n tunnel diodesRICHARD, T. A; CHEN, E. I; SUGG, A. R et al.Applied physics letters. 1993, Vol 63, Num 26, pp 3613-3615, issn 0003-6951Article

Detailed modeling of three-dimensional chemical vapor depositionERN, A; GIOVANGIGLI, V; SMOOKE, M. D et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 670-679, issn 0022-0248Conference Paper

Improved stability of C-doped GaAs grown by chemical beam epitaxy for heterojunction bipolar transistor applicationsDRIAD, R; ALEXANDRE, F; BENCHIMOL, J. L et al.Journal of crystal growth. 1996, Vol 158, Num 3, pp 210-216, issn 0022-0248Article

Growth, etching, doping and effects of Ar⁺ laser irradiation in chemical beam epitaxy of GaAs with novel precursorsTU, C. W; DONG, H. K; LI, N. Y et al.Journal of crystal growth. 1996, Vol 163, Num 1-2, pp 187-194, issn 0022-0248Conference Paper

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p-Type GaAs doped by diiodomethane (CI₂H₂) in molecular beam epitaxy, metalorganic molecular beam epitaxy, and chemical beam epitaxyLI, N. Y; DONG, H. K; TU, C. W et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 246-250, issn 0022-0248, 1Conference Paper

Carbon doping characteristics of GaAs and Al_0.3Ga_0.7As grown by atmospheric pressure metalorganic chemical vapor deposition using CCL₄SEONG-IL KIM; YONG KIM; MOO-SUNG KIM et al.Journal of crystal growth. 1994, Vol 141, Num 3-4, pp 324-330, issn 0022-0248Article

Carbon doping in metalorganic vapor phase epitaxyKUECH, T. F; REDWING, J. M.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 382-389, issn 0022-0248Conference Paper

SIMS and X-ray diffraction characterization of carbon-doped GaAs, Al_xGa_1-xAs films grown by MBEGERARDI, C; GIANINI, C; TAPFER, L et al.Surface and interface analysis. 1994, Vol 22, Num 1-12, pp 367-371, issn 0142-2421Conference Paper

Carbon doping of GaAs and (In,Ga)As in solid source molecular beam epitaxy using carbon tetrabromideKAI ZHANG; WEN-YUEN HWANG; MILLER, D. L et al.Applied physics letters. 1993, Vol 63, Num 17, pp 2399-2401, issn 0003-6951Article

Mechanism of carbon incorporation during GaAs epitaxyCREIGHTON, J. R; BANSENAUER, B. A; HUETT, T et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1993, Vol 11, Num 4, pp 876-883, issn 0734-2101, 1Conference Paper

Ab initio modelling of defects in non-metallic systemsJONES, R.Berichte der Bunsen-Gesellschaft. 1997, Vol 101, Num 9, pp 1198-1203, issn 0940-483XConference Paper

A combined carbon and oxygen segregation model for the LEC growth of SI GaAsEICHLER, S; SEIDL, A; BÖRNER, F et al.Journal of crystal growth. 2003, Vol 247, Num 1-2, pp 69-76, issn 0022-0248, 8 p.Article

Incorporation of carbon by VGF-growth of GaAsHANNIG, C; BUHRIG, E; GÄRTNER, G et al.Crystal research and technology (1979). 1999, Vol 34, Num 2, pp 189-195, issn 0232-1300Conference Paper

Low-resistance polycrystalline GaAs grown by gas-source molecular beam epitaxy using CBr₄LI, N. Y; TU, C. W.Journal of crystal growth. 1998, Vol 188, Num 1-4, pp 45-49, issn 0022-0248Conference Paper

Reflectance anisotropy spectroscopy studies of the growth of carbon-doped GaAs by chemical beam epitaxyJOYCE, T. B; FARRELL, T; DAVIDSON, B. R et al.Journal of crystal growth. 1998, Vol 188, Num 1-4, pp 211-219, issn 0022-0248Conference Paper

Carbon doping and etching effects of CBr₄ during metalorganic chemical vapor deposition of GaAs and AlAsTATENO, K; KOHAMA, Y; AMANO, C et al.Journal of crystal growth. 1997, Vol 172, Num 1-2, pp 5-12, issn 0022-0248Article