Bismuth-containing semiconductors: Linear and nonlinear optical susceptibilities of GaAs_1―xBi_x alloysALI HUSSAIN RESHAK; KAMARUDIN, H; AULUCK, S et al.Journal of alloys and compounds. 2011, Vol 509, Num 40, pp 9685-9691, issn 0925-8388, 7 p.Article

Growth of GaAsBi alloy under alternated bismuth flows by metalorganic vapor phase _epitaxyCHINE, Z; FITOURI, H; ZAIED, I et al.Journal of crystal growth. 2011, Vol 330, Num 1, pp 35-38, issn 0022-0248, 4 p.Article

Bismuth alloying in GaAs : a first-principles studyMADOURI, D; BOUKRA, A; ZAOUI, A et al.Computational materials science. 2008, Vol 43, Num 4, pp 818-822, issn 0927-0256, 5 p.Article

Quantitative estimation of density of Bi-induced localized states in GaAs_1―xBi_x grown by molecular beam epitaxyYOSHIMOTO, Masahiro; ITOH, Mizuki; TOMINAGA, Yoriko et al.Journal of crystal growth. 2013, Vol 378, pp 73-76, issn 0022-0248, 4 p.Conference Paper

Photoluminescence investigation of GaAs_1―xBi_x/GaAs heterostructuresPACEBUTAS, Vaidas; BUTKUTE, Renata; CECHAVICIUS, Bronius et al.Thin solid films. 2012, Vol 520, Num 20, pp 6415-6418, issn 0040-6090, 4 p.Article

Structural characterization of GaAs_1-xBi_x alloy by rutherford backscattering spectrometry combined with the channeling techniqueTAKAHIRO, Katsumi; KAWATSURA, Kiyoshi; OE, Kunishige et al.Journal of electronic materials. 2003, Vol 32, Num 1, pp 34-37, issn 0361-5235, 4 p.Article

GaAs_1-xBi_x light emitting diodesLEWIS, R. B; BEATON, D. A; XIANFENG. LU et al.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1872-1875, issn 0022-0248, 4 p.Conference Paper

Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs_{1_x}Bi_x/GaAs heterostructuresMAZUR, Yu I; DOROGAN, V. G; SALAMO, G. J et al.Nanotechnology (Bristol. Print). 2014, Vol 25, Num 3, issn 0957-4484, 035702.1-035702.9Article

Effect of annealing on the structural and optical properties of (311)B GaAsBi layersRODRIGO, J. F; SALES, D. L; SHAFI, M et al.Applied surface science. 2010, Vol 256, Num 18, pp 5688-5690, issn 0169-4332, 3 p.Conference Paper

Metalorganic vapor phase epitaxial growth of metastable GaAs_1-xBi_x alloyOE, Kunishige.Journal of crystal growth. 2002, Vol 237-39, pp 1481-1485, issn 0022-0248, 2Conference Paper

Surface reconstructions during growth of GaAs_1―xBi_x alloys by molecular beam epitaxyMASNADI-SHIRAZI, M; BEATON, D. A; LEWIS, R. B et al.Journal of crystal growth. 2012, Vol 338, Num 1, pp 80-84, issn 0022-0248, 5 p.Article

Bismuth in gallium arsenide: Structural and electronic properties of GaAs_1―xBi_x alloysHUSSAIN RESHAK, Ali; KAMARUDIN, H; AULUCK, S et al.Journal of solid state chemistry (Print). 2012, Vol 186, pp 47-53, issn 0022-4596, 7 p.Article

Atmospheric-pressure metalorganic vapour phase epitaxy optimization of GaAsBi alloyMOUSSA, I; FITOURI, H; REBEY, A et al.Thin solid films. 2008, Vol 516, Num 23, pp 8372-8376, issn 0040-6090, 5 p.Article

AP-MOVPE of thin GaAs_1-xBi_x alloysFITOURI, H; MOUSSA, I; REBEY, A et al.Journal of crystal growth. 2006, Vol 295, Num 2, pp 114-118, issn 0022-0248, 5 p.Article

Bismuth alloying properties in GaAs nanowiresLU DING; PENGFEI LU; HUAWEI CAO et al.Journal of solid state chemistry (Print). 2013, Vol 205, pp 44-48, issn 0022-4596, 5 p.Article