Zur Darstellung von Thiogallanen aus Galliumhalogeniden und Bleibis(thiolaten) = Synthèse de thiogallanes à partir d'halogénures de gallium et de bis-thiolates de plomb = Synthesis of thiogallanes via gallium halides and lead bis(thiolates)HOFFMANN, G. G.Chemische Berichte. 1985, Vol 118, Num 4, pp 1655-1667, issn 0009-2940Article

Systèmes Ga(IO3)3-Ga(NO3)3-H2O et Ga(IO3)3-Ga2(SO4)3-H2O à 25°CSHKLOVSKAYA, R. M; ARKHIPOV, S. M; KIDYAROV, B. I et al.Žurnal neorganičeskoj himii. 1987, Vol 32, Num 9, pp 2334-2336, issn 0044-457XArticle

Light scattering determinations of band offsets in semiconductor heterostructuresMENENDEZ, J; PINCZUK, A.IEEE journal of quantum electronics. 1988, Vol 24, Num 8, pp 1698-1711, issn 0018-9197Article

Directional dispersion of the phonon modes in optically uniaxial solids, far-infrared reflection spectra, dielectric and optic constants, dynamic effective ionic charges of the defect chalcopyrites CdGa₂S₄, CdGa₂Se₄, HgGa₂S₄ and HgGa₂Se₄HAEUSELER, H; WÄSCHENBACH, G; LUTZ, H. D et al.Physica status solidi. B. Basic research. 1985, Vol 129, Num 2, pp 549-558, issn 0370-1972Article

Über die Reaktivität von Phenylgalliumdiiodid und Methylgalliumdiiodid mit Alkyl- und Arylthiolen = Réactivité du diiodure de phénylgallium et du diiodure de méthylgallium vis-à-vis des alkyl- et des arylthiols = On the reactivity of phenyldiiodogallane and methyldiiodogallane with alkyl- and arylthiolsHOFFMANN, G. G.Zeitschrift für anorganische und allgemeine Chemie (1950). 1984, Num 514, pp 196-204, issn 0044-2313Article

Photometric determination of metallic gallium in gallium oxide after breakdown by bromine in an autoclaveKAPLAN, B.Ya; KUDRYAVTSEVA, G.S; MALYUTINA, T.M et al.Zavodskaâ laboratoriâ. 1983, Vol 49, Num 6, pp 7-8, issn 0321-4265Article

Diffusion of gallium in thin gold films on GaAs = Diffusion de gallium dans des couches minces d'or sur GaAsGUPTA, R. P; KHOKLE, W. S; WUERFL, J et al.Thin solid films. 1987, Vol 151, Num 3, pp L121-L125, issn 0040-6090Article

Über die Darstellung von Phenyl(diorganylthio)- und Triorganylthiogallanen aus Triphenylgallan und Thiolen = Synthèse de phényl(diorganylthio)- et de triorganylthio gallanes à partir de triphényl gallane et de thiols = On the synthesis of phenyl(diorganylthio)- and triorganylthiogallanes from triphenylgallane and thiolsHOFFMANN, G. G.Journal of organometallic chemistry. 1984, Vol 277, Num 2, pp 189-198, issn 0022-328XArticle

AlGaAs/GaAs heterojunction bipolar transistor circuits with improved high-speed performanceCHANG, M. F; ASBECK, P. M; WANG, K. C et al.Electronics Letters. 1986, Vol 22, Num 22, pp 1173-1174, issn 0013-5194Article

An empirical pseudopotential analysis of (100) and (110) GaAs-Al_xGa₁-_xAs heterojunctionsMARSH, A. C; INKSON, J. C.Journal of physics. C. Solid state physics. 1986, Vol 19, Num 1, pp 43-52, issn 0022-3719Article

Study of persistent photoconductivity effect in n-type selectively doped AlGaAs/GaAs heterojunctionKASTALSKY, A; HWANG, J. C. M.Solid state communications. 1984, Vol 51, Num 5, pp 317-322, issn 0038-1098Article

Fabrication and characterization of AlGaAs/GaAS heterojunction bipolar transistorsITO, H; ISHIBASHI, T; SUGETA, T et al.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 2, pp 224-229, issn 0018-9383Article

Photoconductivity in selectively n- and p-doped Al_xGa_1-x/GaAs heterostructuresSCHUBERT, E. F; FISCHER, A; PLOOG, K et al.Solid-state electronics. 1986, Vol 29, Num 2, pp 173-180, issn 0038-1101Article

Photoluminescence of strained-layer superlatticesKATO, H; NAKAYAMA, M; CHIKA, S et al.Solid state communications. 1984, Vol 52, Num 5, pp 559-561, issn 0038-1098Article

Landau-level broadening in GaAs/AlGaAs heterojunctionsANDO, T; MURAYAMA, Y.Journal of the Physical Society of Japan. 1985, Vol 54, Num 4, pp 1519-1527, issn 0031-9015Article

Luminescence propre et luminescence d'impureté dans les structures GaAs-AlGaAs à puits quantiquesALFEROV, ZH. I; KOP'EV, P. S; BER, B. YA et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 4, pp 715-721, issn 0015-3222Article

Three-terminal multilayer GaAs AlGas cascade cells with selective electrodesWAGNER, M; LEBURTON, J. P.IEEE photovoltaic specialists conference. 18. 1985, pp 1729-1730Conference Paper

Improvements in MBE grown Al_xGa_1-xAs/GaAs single quantum well structures resulting from dimeric arsenicFISCHER, R; SUN, Y. L; MASSELINK, W. T et al.Japanese journal of applied physics. 1984, Vol 23, Num 2, pp L126-L128, issn 0021-4922Article

Frequency-enhanced fractional quantisation in GaAs-GaAlAs heterojunctionsMCFADDEN, C; LONG, A. P; MYRON, H. W et al.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 17, pp L439-L444, issn 0022-3719Article

GaAs/AlGaAs heterostructure point-contact concentrator cellsGALE, R. P; ZAVRACKY, P. M; MCCLELLAND, R. W et al.Photovoltaic specialists conference. 19. 1987, pp 63-66Conference Paper

Spectres de photosensibilité des hétérostructures GaAs-GaAs-AlxGa1-xAsPOLYAKOV, V. I; PEROV, P. I; ERMAKOV, M. G et al.Fizika i tehnika poluprovodnikov. 1986, Vol 20, Num 9, pp 1605-1612, issn 0015-3222Article

Analysis of polaron effects in the cyclotron resonance of n-GaAs and AlGaAs-GaAs heterojunctionsSIGG, H; WYDER, P; PERENBOOM, J. A. A. J et al.Physical review. B, Condensed matter. 1985, Vol 31, Num 8, pp 5253-5261, issn 0163-1829Article

Improved AlGaAs/GaAs HBT performance by InGaAs emitter cap layerNAGATA, K; NAKAJIMA, O; NITTONO, T et al.Electronics Letters. 1987, Vol 23, Num 11, pp 566-568, issn 0013-5194Article

Photoluminescence in AlGaAs/GaAs heterojunction bipolar transistorsEDA, K; INADA, M.Journal of applied physics. 1987, Vol 62, Num 10, pp 4236-4243, issn 0021-8979Article

Process optimization for high efficiency thin graded band gap window GaAs and GaAPAs solar cellsMAYET, L; GAVAND, M; MONTEGU, B et al.Photovoltaic specialists conference. 19. 1987, pp 98-101Conference Paper