Gallium nitride materials and devices V (25-28 January 2010, San Francisco, California, United States)Chyi, Jen-Inn.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7602, issn 0277-786X, isbn 0-8194-7998-5 978-0-8194-7998-3, 1Vol, various pagings, isbn 0-8194-7998-5 978-0-8194-7998-3Conference Proceedings

Ab initio study of structural properties for zincblende AlInN: Comparison of LDA and GGALIOU, Bo-Ting; WU, Bang-Yenn.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7602, issn 0277-786X, isbn 0-8194-7998-5 978-0-8194-7998-3, 1Vol, 76021W.1-76021W.8Conference Paper

Quantitative image reconstruction of GaN quantum dots from oversampled diffraction intensities aloneJIANWEI MIAO; NISHINO, Yoshinori; KOHMURA, Yoshiki et al.Physical review letters. 2005, Vol 95, Num 8, issn 0031-9007, 085503-1-085503-4Article

Growth of high quality cubic GaN on (001) GaAs by Halide VPE with back side bufferHASEGAWA, F; TSUCHIYA, H; SUNABA, K et al.SPIE proceedings series. 1998, pp 20-26, isbn 0-8194-2873-6Conference Paper

Promising composite die-bonding materials for high-power GaN-based LED applicationsHORNG, Ray-Hua; HONG, Jhih-Sin; TSAI, Yu-Li et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7602, issn 0277-786X, isbn 0-8194-7998-5 978-0-8194-7998-3, 1Vol, 76021E.1-76021E.9Conference Paper

Magnetic Cages of GaN Nanoclusters Doped with Gd and NdKUMAR, Vijay; ZAVADA, John M.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7602, issn 0277-786X, isbn 0-8194-7998-5 978-0-8194-7998-3, 1Vol, 76020E.1-76020E.7Conference Paper

PREPARATION ET CARACTERISATION DE COMPOSES TERNAIRES DANS LE SYSTEME CALCIUM-GALLIUM-AZOTEVERDIER P; MARCHAND R; LANG J et al.1976; REV. CHIM. MINER.; FR.; DA. 1976; VOL. 13; NO 2; PP. 214-218; ABS. ANGL.; BIBL. 5 REF.Article

Ammonothermal growth of GaN substratesDWILIVSKI, R; DORADZINSKI, R; GARCZYNSKI, J et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7602, issn 0277-786X, isbn 0-8194-7998-5 978-0-8194-7998-3, 1Vol, 76020C.1-76020C.10Conference Paper

PARTICULARITES DE LA FORMATION ET STABILITE CHIMIQUE DES NITRURES COMPLEXES DES ELEMENTS DU GROUPE III BLYUTAYA MD; BARTNITSKAYA TS.1974; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1974; VOL. 10; NO 8; PP. 1457-1459; BIBL. 5 REF.Article

Growth of self-standing GaN substratesLEE, Hyun-Jae; FUJII, Katsushi; GOTO, Takenari et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7602, issn 0277-786X, isbn 0-8194-7998-5 978-0-8194-7998-3, 1Vol, 760202.1-760202.8Conference Paper

GaN thin film fabrication by reaction of laser evaporated Ga and GaAs in NH₃ atmosphereDI PALMA, T. M; TEGHIL, R; MAROTTA, V et al.Applied surface science. 1998, Vol 127-29, pp 350-354, issn 0169-4332Conference Paper

Highly reliable blue-violet inner stripe laser diodes using planar regrowth of AlGaN/GaN superlattice cladding layerFUKUDA, K; KOHMOTO, S; MATSUDATE, M et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 6, pp 2094-2097, issn 1862-6300, 4 p.Conference Paper

Analytical Calculation of the Quantum 1/f Coherence Parameter for HFETsHANDEL, Peter H; SHERIF, Taher S.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7602, issn 0277-786X, isbn 0-8194-7998-5 978-0-8194-7998-3, 1Vol, 76020N.1-76020N.7Conference Paper

Crystallographic polarity and crystallinity characterization of polar and nonpolar GaN epitaxial films by X-ray diffraction analysesINABA, Katsuhiko; AMANO, Hiroshi.Physica status solidi. B. Basic research. 2007, Vol 244, Num 6, pp 1775-1779, issn 0370-1972, 5 p.Conference Paper

Momentum selectivity and anisotropy effects in the nitrogen K-edge resonant inelastic x-ray scattering from GaNSTROCOV, V. N; SCHMITT, T; RUBENSSON, J.-E et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 8, pp 085221.1-085221.9, issn 1098-0121Article

Investigation of phonon-assisted photoluminescence in wurtzite GaN epilayerWEI LIU; LI, M. F; XU, S.-J et al.SPIE proceedings series. 1998, pp 27-34, isbn 0-8194-2873-6Conference Paper

ON THE THERMAL DECOMPOSITION OF GAN IN VACUUMGROH R; GEREY G; BARTHA L et al.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 26; NO 1; PP. 353-357; ABS. ALLEM.; BIBL. 5 REF.Article

THERMAL EXPANSION OF GAN.EJDER E.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 23; NO 1; PP. K87-K90; BIBL. 18 REF.Article

Are cubic nitrides viable materials for optoelectronic devices ?MÜLLHÄUSER, J. R; KLANN, R; YANG, H et al.SPIE proceedings series. 1998, pp 38-47, isbn 0-8194-2718-7Conference Paper

GROWTH OF GAN THIN-FILMS FROM TRIETHYLGALLIUM MONAMINE.ANDREWS JE; LITTLEJOHN MA.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 9; PP. 1273-1275; BIBL. 5 REF.Article

Growth shape control of group-III nitrides by selective area MOVPEKOBAYASHI, N; AKASAKA, T; ANDO, S et al.SPIE proceedings series. 1998, pp 2-6, isbn 0-8194-2873-6Conference Paper

Yellow photoluminescence in MOCVD-grown n-type GaNSCHUBERT, E. F; GRIESHABER, W; BOUTROS, K. S et al.SPIE proceedings series. 1998, pp 59-68, isbn 0-8194-2718-7Conference Paper

ANALYSE THERMODYNAMIQUE DES METHODES D'OBTENTION DE GANCHETNOV VP; MALKOVA AS; PASHINKIN AS et al.1979; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; SUN; DA. 1979; VOL. 15; NO 3; PP. 462-465; BIBL. 11 REF.Article

Development of high-power UV LEDs for epoxy curing applicationsLIU, W. H; CHU, C. F; CHEN, Y. W et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7602, issn 0277-786X, isbn 0-8194-7998-5 978-0-8194-7998-3, 1Vol, 76021K.1-76021K.7Conference Paper

The energy of tilt grain boundaries around (0001) in GaNJUN CHEN; RUTERANA, P; NOUET, G et al.Physica status solidi. A. Applied research. 2006, Vol 203, Num 2, pp 247-258, issn 0031-8965, 12 p.Article