kw.\*:("Germanium additions")
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Defects in Ge+-implanted Si studied by slow positron implantation spectroscopyKUNA, S. A. E; COLEMAN, P. G; NEJIM, A et al.Semiconductor science and technology. 1998, Vol 13, Num 4, pp 394-398, issn 0268-1242Article
Acoustic index of Ge-doped optical fibersHERSTRØM, Søren; GRÜNER-NIELSEN, Lars; PALSDOTTIR, Bera et al.Optics letters. 2009, Vol 34, Num 23, pp 3689-3691, issn 0146-9592, 3 p.Article
Chemical Composition Gratings in Germanium doped and Boron-Germanium co-doped fibersBARRERA, D; FINAZZI, V; COVIELLO, G et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7726, issn 0277-786X, isbn 978-0-8194-8199-3 0-8194-8199-8, 1Vol, 772607.1-772607.7Conference Paper
Wavelength encoded fiber sensor for extreme temperature rangeBARRERA, D; FINAZZI, V; COVIELLO, G et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7653, issn 0277-786X, isbn 978-0-8194-8083-5, 76530F.1-76530F.4Conference Paper
Annealing of arc-induced gratings at high temperaturesREGO, G.Electronics letters. 2009, Vol 45, Num 19, pp 972-974, issn 0013-5194, 3 p.Article
Hydrogen-related conversion processes of Ge-related point defects in silica triggered by ultraviolet laser irradiationMESSINA, F; CANNAS, M.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 19, pp 195212.1-195212.7, issn 1098-0121Article
Gamma-ray sensor based on microdisk whispering gallery modesSABAEIAN, Mohammad; NADGARAN, Hamid; KARGAR, Zohreh et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8073, issn 0277-786X, isbn 978-0-8194-8663-9, 80730R.1-80730R.7Conference Paper
Excitation channels of the 4.3eV photoluminescence in Ge-SiO2CRIVELLI, B; MARTINI, M; MEINARDI, F et al.Solid state communications. 1996, Vol 100, Num 9, pp 651-656, issn 0038-1098Article
Thermal conductivity of isotopically pure and Ge-doped Si epitaxial layers from 300 to 550 KCAHILL, David G; WATANABE, Fumiya.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 23, pp 235322.1-235322.3, issn 1098-0121Article
Temperature stability of high Ge-doped fibre Bragg gratingJIANGTAO GUO; FENG TU; HUIFENG WEI et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7990, issn 0277-786X, isbn 978-0-8194-8558-8, 79900D.1-79900D.5Conference Paper
High nonlinearity holey fibers at wavelength of optical communication with triangular transverse structure and Ge doped coreLEI ZHANG; WEI ZHANG; YIDONG HUANG et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 60191H.1-60191H.8, issn 0277-786X, isbn 0-8194-6050-8, 2VolConference Paper
Hybrid large mode area photonic crystal fiber for distributed spectral filtering and single-mode operationPOLI, Federica; COSCELLI, Enrico; ALKESKJOLD, Thomas T et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7914, issn 0277-786X, isbn 978-0-8194-8451-2, 79141P.1-79141P.7Conference Paper
Fundamental-mode cutoff in liquid-filled Y-shaped microstructured fibers with Ge-doped coreTORRES-PEIRO, S; DIEZ, A; CRUZ, J. L et al.Optics letters. 2008, Vol 33, Num 22, pp 2578-2580, issn 0146-9592, 3 p.Article
Estimating the effect of Ge doping on the acoustic damping coefficient via a highly Ge-doped MCVD silica fiberDRAGIC, Peter D.Journal of the Optical Society of America. B, Optical physics (Print). 2009, Vol 26, Num 8, pp 1614-1620, issn 0740-3224, 7 p.Article
Comparative study of UV absorption changes induced in germanosilicate glass by high-intensity femtosecond pulses at 267, 400 and 800 nmKUDRIASOV, Viaceslav; MAJUS, Donatas; SIRUTKAITIS, Valdas et al.Optics communications. 2007, Vol 271, Num 2, pp 408-412, issn 0030-4018, 5 p.Article
Observation of an enhanced gettering effect in silicon under germanium molecular ion implantationDAVID, C; SUNDARAVEL, B; RAVINDRAN, T. R et al.Applied physics. A, Materials science & processing (Print). 2007, Vol 88, Num 2, pp 397-400, issn 0947-8396, 4 p.Article
Dependence on Ge doping of specific volume change in silica induced by electron-beam irradiationJACQUELINE, A.-S; GARCIA-BLANCO, S; POUMELLEC, B et al.Journal of non-crystalline solids. 2003, Vol 322, Num 1-3, pp 284-288, issn 0022-3093, 5 p.Conference Paper
Controlling the width of a femtosecond continuum generated in a small-diameter fibreKOBTSEV, S. M; KUKARIN, S. V; FATEEV, N. V et al.Quantum electronics (Woodbury). 2002, Vol 32, Num 1, pp 11-13, issn 1063-7818Article
Low temperature muonium behaviour in cz-si and Cz-Si0.91Ge0.09KING, P. J. C; YONENAGA, I.Physica. B, Condensed matter. 2001, Vol 308-10, pp 546-549, issn 0921-4526Conference Paper
Wetting and energetics of solid Au and Au-Ge/SiC interfacesWANG, Z; WYNBLATT, P.Acta materialia. 1998, Vol 46, Num 14, pp 4853-4859, issn 1359-6454Article
Photoluminescence of defects in Ge+ ion implanted thermal SiO2 filmsZHANG, J.-Y; YE, Y.-H; BAO, X.-M et al.Journal of non-crystalline solids. 1998, Vol 241, Num 2-3, pp 184-189, issn 0022-3093Article
Dynamics of the refractive index induced in germanosilicate optical fibres by different types of UV irradiationDIANOV, E. M; VASIL'EV, S. A; MEDVEDKOV, O. I et al.Quantum electronics (Woodbury). 1997, Vol 27, Num 9, pp 785-788, issn 1063-7818Article
On the solubility of isomorphous impurities in quartz crystalsTREIVUS, E. B.Inorganic materials. 1996, Vol 32, Num 10, pp 1059-1062, issn 0020-1685Article
Temperature and pressure dependence of Ge diffusion in aluminiumTHÜRER, A; RUMMEL, G; ZUMKLEY, T et al.Physica status solidi. A. Applied research. 1995, Vol 149, Num 2, pp 535-547, issn 0031-8965Article
Single Crystalline Ge1-xMnx Nanowires as Building Blocks for NanoelectronicsVAN DER MEULEN, Machteld I; PETKOV, Nikolay; MORRIS, Michael A et al.Nano letters (Print). 2009, Vol 9, Num 1, pp 50-56, issn 1530-6984, 7 p.Article