kw.\*:("HETEROJONCTION")
Results 1 to 25 of 19690
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COUPLING COEFFICIENTS FOR DISTRIBUTED FEEDBACK SINGLE- AND DOUBLE-HETEROSTRUCTURE DIODE LASERS.STREIFER W; SCIFRES DR; BURNHAM RD et al.1975; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1975; VOL. 11; NO 11; PP. 867-873; BIBL. 20 REF.Article
ELECTROLUMINESCENCE DANS UNE HETEROJONCTION ZNTE-ZNSELE FLOCH G; ARNOULD H.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 8; PP. 941-944; ABS. ANGL.; BIBL. 14 REF.Serial Issue
THE GROWTH OF GE-GAAS AND GAP-SI HETEROJUNCTIONS BY LIQUID PHASE EPITAXYROSZTOCZY FE; STEIN WW.1972; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1972; VOL. 119; NO 8; PP. 1119-1121; BIBL. 5 REF.Serial Issue
PHENOMENA AT HETEROJUNCTIONSVAN RUYVEN LJ.1972; ANNU. REV. MATER. SCI.; U.S.A.; DA. 1972; VOL. 2; PP. 501-528; BIBL. 1 P. 1/2Serial Issue
THE GRADED-GAP ALXGA1-XAS-GAAS HETEROJUNCTIONWOMAC JF; REDIKER RH.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 10; PP. 4129-4133; BIBL. 20 REF.Serial Issue
DETECTEURS DE PETITS SIGNAUX LUMINEUX A HETEROJONCTION CU2SE-CDSEKOMASHCHENKO VN; FEDORUS GA.1972; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1972; NO 9; PP. 25-29; BIBL. 4 REF.Serial Issue
GREEN ELECTROLUMINESCENCE FROM CDS-CUGAS2 HETERODIODESWAGNER S; SHAY JL; TELL B et al.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 8; PP. 351-353; BIBL. 6 REF.Serial Issue
ELECTROLUMINESCENCE PAR INJECTION DANS L'HETEROJONCTION ZNSE-SNO2IKEDA K; USHIDA K; KHAMAKAVA E et al.1973; IZVEST. AKAD. NAUK S.S.S.R., SER. FIZ.; S.S.S.R.; DA. 1973; VOL. 37; NO 2; PP. 423-425; BIBL. 6 REF.Serial Issue
ELECTRONIC PROPERTIES OF GRADED HETEROJUNCTIONSROTH LM; BENNETT AJ.1972; PHYS. REV., B; U.S.A.; DA. 1972; VOL. 6; NO 6; PP. 2238-2245; BIBL. 10 REF.Serial Issue
DIFFUSE STRAHLUNG AUS (GAAL) AS/GAAS-HETERODIODEN VOM FABRY-PEROT-TYP = EMISSION DIFFUSE PAR DES HETERODIODES (GAAL) AS/GAAS DU TYPE FABRY-PEROTZEHE A; JACOBS B; ALBRECHT R et al.1972; KRISTALL U. TECH.; DTSCH.; DA. 1972; VOL. 7; NO 12; PP. 1365-1374; ABS. ANGL.; BIBL. 10 REF.Serial Issue
COSTRUZIONE E CARATTERIZZAZIONE DI DISPOSITIVI LASER A SEMICONDUTTORE A DOPPIA ETEROGIUNZIONE. = CONSTRUCTION ET CARACTERISTIQUES DES DISPOSITIFS LASER A SEMICONDUCTEUR A DOUBLE HETEROJONCTIONDONZELLI G; FLORES C; RANDONE G et al.1976; ALTA FREQ.; ITAL.; DA. 1976; VOL. 45; NO 5; PP. 279-288; BIBL. 16 REF.Article
LOW-THRESHOLD LPE IN1-X'GAX'P1-Z'/IN1-XGAXP1-ZASZ/IN1-X' GAX'P1-Z'ASZ' YELLOW DOUBLE-HETEROJUNCTION LASER DIODES (J<104 A/CM2, LAMBDA EQUIV. A 5850 A, 77OK).HITCHENS WR; HOLONYAK N JR; WRIGHT PD et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 4; PP. 245-247; BIBL. 14 REF.Article
VERY LOW-THRESHOLD DOUBLE-HETEROJUNCTION ALXGA1-X AS INJECTION LASERS.ETTENBERG M.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 12; PP. 652-654; BIBL. 9 REF.Article
RAPID DEGRADATION IN DOUBLE-HETEROSTRUCTURE LASERS. II. SEMIQUANTITATIVE ANALYSES ON THE PROPAGATION OF DARK LINE DEFECTS.NANNICHI Y; MATSUI J; ISHIDA K et al.1975; JAP. J. APPL. PHYS.; JAP.; DA. 1975; VOL. 14; NO 10; PP. 1561-1568; BIBL. 24 REF.Article
CHARACTERISTICS OF THE JUNCTION-STRIPE-GEOMETRY GAAS-GAALAS DOUBLE-HETEROSTRUCTURE LASERS.NAMIZAKI H; KAN H; ISHII M et al.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 10; PP. 1618-1623; BIBL. 7 REF.Article
PHOTON RECYCLING IN SEMICONDUCTOR LASERS.STERN F; WOODALL JM.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 9; PP. 3904-3906; BIBL. 10 REF.Article
GAAS-ALXGA1-XAS INJECTION LASERS WITH DISTRIBUTOR BRAGG REFLECTORS.REIHART FK; LOGAN RA; SHANK CV et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 1; PP. 45-48; BIBL. 16 REF.Article
GROWTH OF DARK LINES FROM CRYSTAL DEFECTS IN GAAS-GAALAS DOUBLE HETEROSTRUCTURE CRYSTALS.ITO R; NAKASHIMA H; NAKADA O et al.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 8; PP. 1321-1322; BIBL. 8 REF.Article
HETEROSTRUCTURE INJECTION LASERS.PANISH MB.1975; I.E.E. TRANS-MICROWAVE THEORY TECH.; U.S.A.; DA. 1975; VOL. 23; NO 1; PP. 20-30; BIBL. 73 REF.Article
THE ANALYSIS OF OPTICAL SCATTERING IN DOUBLE-HETEROSTRUCTURE AND FIVE-LAYER HETEROSTRUCTURE (GAAL) AS/GAAS INJECTION LASERS.THOMPSON GHB; KIRKBY PA; WHITEAWAY JEA et al.1975; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1975; VOL. 11; NO 7 PART. 2; PP. 481-488; BIBL. 6 REF.Article
RAPID DEGRADATION IN DOUBLE-HETEROSTRUCTURE LASERS. I. PROPOSAL OF A NEW MODEL FOR THE DIRECTIONAL GROWTH OF DISLOCATION NETWORKS.MATSUI J; ISHIDA K; NANNICHI Y et al.1975; JAP. J. APPL. PHYS.; JAP.; DA. 1975; VOL. 14; NO 10; PP. 1555-1560; BIBL. 18 REF.Article
STRIPED-SUBSTRATE DOUBLE-HETEROSTRUCTURE LASERS.BURNHAM RD; SCIFRES DR; TRAMONTANA JC et al.1975; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1975; VOL. 11; NO 7 PART. 2; PP. 418-420; BIBL. 5 REF.Article
HOW MUCH AL IN THE ALGAAS-GAAS LASER.RODE DL.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 9; PP. 3887-3891; BIBL. 31 REF.Article
SPECTRAL BEHAVIORS OF SPONTANEOUSLY PULSING DOUBLE-HETEROSTRUCTURE INJECTION LASERS.CHINONE N; ITO R.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 3; PP. 575-576; BIBL. 8 REF.Article
OXYGEN-IMPLANTED DOUBLE-HETEROJUNCTION GAAS/GAALAS INJECTION LASERS.BLUM JM; GRODDY JC; MCMULLIN PG et al.1975; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1975; VOL. 11; NO 7 PART. 2; PP. 413-418; BIBL. 14 REF.Article