Modeling and simulation of HgCdTe based p⁺-n-n⁺ LWIR photodetectorSAXENA, P. K.Infrared physics & technology. 2011, Vol 54, Num 1, pp 25-33, issn 1350-4495, 9 p.Article

HgCdTe technology in AustraliaANTOSZEWSKI, J; DELL, J. M; FARAONE, L et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7298, issn 0277-786X, isbn 978-0-8194-7564-0 0-8194-7564-5, 729830.1-729830.13, 2Conference Paper

MBE Growth of HgCdTe on Large-Area Si and CdZnTe Wafers for SWIR, MWIR and LWIR DetectionREDDY, M; PETERSON, J. M; LOFGREEN, D. D et al.Journal of electronic materials. 2008, Vol 37, Num 9, pp 1274-1282, issn 0361-5235, 9 p.Conference Paper

Progress in the Molecular Beam Epitaxy of HgCdTe on Large-Area Si and CdZnTe SubstratesREDDY, M; PETERSON, J. M; JOHNSON, S. M et al.Journal of electronic materials. 2009, Vol 38, Num 8, pp 1764-1770, issn 0361-5235, 7 p.Conference Paper

Midwave-infrared negative luminescence properties of HgCdTe devices on silicon substratesBEWLEY, W. W; LINDLE, J. R; VURGAFTMAN, I et al.Journal of electronic materials. 2003, Vol 32, Num 7, pp 651-655, issn 0361-5235, 5 p.Conference Paper

HgCdTe: Recent Trends in the Ultimate IR SemiconductorKINCH, Michael A.Journal of electronic materials. 2010, Vol 39, Num 7, pp 1043-1052, issn 0361-5235, 10 p.Conference Paper

30 Years of HgCdTe Technology in IsraelWEISS, Eliezer.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7298, issn 0277-786X, isbn 978-0-8194-7564-0 0-8194-7564-5, 72982W.1-72982W.15, 2Conference Paper

Performance of molecular-beam epitaxy-grown midwave infrared HgCdTe detectors on four-inch Si substrates and the impact of defectsVARESI, J. B; BUELL, Aa; PETERSON, J. M et al.Journal of electronic materials. 2003, Vol 32, Num 7, pp 661-666, issn 0361-5235, 6 p.Conference Paper

Modeling of Copper SIMS Profiles in Thin HgCdTeSCHAAKE, H. F; KINCH, M. A; AQARIDEN, F et al.Journal of electronic materials. 2008, Vol 37, Num 9, pp 1387-1390, issn 0361-5235, 4 p.Conference Paper

Trade-offs and difficulties of the vertical photoconductor: a novel device structure suitable for HgCdTe two-dimensional infrared focal plane arraysBHAN, R. K; DHAR, V; MITTAL, V et al.Infrared physics & technology. 1999, Vol 40, Num 5, pp 395-397, issn 1350-4495Article

High operating temperature MWIR detectorsKINCH, M. A; SCHAAKE, H. F; STRONG, R. L et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7660, issn 0277-786X, isbn 978-0-8194-8124-5, 76602V.1-VV.13, 2Conference Paper

HgCdTe technologies in South KoreaBAE, Sooho; HAN JUNG; SUN HO KIM et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7298, issn 0277-786X, isbn 978-0-8194-7564-0 0-8194-7564-5, 72982Y.1-72982Y.10, 2Conference Paper

Russian development of HgCdTe technology: 50 yearsBOLTAR, Konstantin O; BURLAKOV, Igor D; PONOMARENKO, Vladimir P et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7298, issn 0277-786X, isbn 978-0-8194-7564-0 0-8194-7564-5, 72982P.1-72982P.15, 2Conference Paper

Advances in HgCdTe APDs and LADAR ReceiversBAILEY, Steven; MCKEAG, William; JINXUE WANG et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7660, issn 0277-786X, isbn 978-0-8194-8124-5, 76603I.1-76603I.13, 2Conference Paper

Simulation and design consideration of photoresponse for HgCdTe infrared photodiodesHU, W. D; CHEN, X. S; YIN, F et al.Optical and quantum electronics. 2009, Vol 40, Num 14-15, pp 1255-1260, issn 0306-8919, 6 p.Conference Paper

Modeling of dark characteristics for long-wavelength HgCdTe photodiodeQUAN, Z. J; CHEN, X. S; HU, W. D et al.Optical and quantum electronics. 2006, Vol 38, Num 12-14, pp 1107-1113, issn 0306-8919, 7 p.Conference Paper

Toward third generation HgCdTe infrared detectorsROGALSKI, Antoni.Journal of alloys and compounds. 2004, Vol 371, pp 53-57, issn 0925-8388, 5 p.Conference Paper

Molecular Beam Epitaxy Growth of HgCdTe on Large-Area Si and CdZnTe SubstratesREDDY, M; PETERSON, J. M; SMITH, E. P. G et al.Journal of electronic materials. 2011, Vol 40, Num 8, pp 1706-1716, issn 0361-5235, 11 p.Conference Paper

Numerical analysis of two-color HgCdTe infrared photovoltaic heterostructure detectorHU, W. D; CHEN, X. S; YE, Z. H et al.Optical and quantum electronics. 2009, Vol 41, Num 9, pp 699-704, issn 0306-8919, 6 p.Article

Accurate determination of the matrix composition profile of Hg_1-xCd_xTe by secondary ion mass spectrometryWANG, Larry; WANG, Alice; PRICE, Steve et al.Journal of electronic materials. 2007, Vol 36, Num 8, pp 910-912, issn 0361-5235, 3 p.Conference Paper

Mercury cadmium telluride/cadmium telluride distributed Bragg reflectors for use with resonant cavity-enhanced detectorsWEHNER, J. G. A; SEWELL, R. H; ANTOSZEWSEI, J et al.Journal of electronic materials. 2005, Vol 34, Num 6, pp 710-715, issn 0361-5235, 6 p.Conference Paper

Crosstalk Modeling of Small-Pitch Two-Color HgCdTe PhotodetectorsWEHNER, J. G. A; SMITH, E. P. G; RADFORD, W et al.Journal of electronic materials. 2012, Vol 41, Num 10, pp 2925-2927, issn 0361-5235, 3 p.Conference Paper

The effect of substrate material on pulsed laser deposition of HgCdTe filmsLIU, M; MAN, B. Y; LIN, X. C et al.Applied surface science. 2009, Vol 255, Num 9, pp 4848-4851, issn 0169-4332, 4 p.Article

Extended X-ray absorption fine structure study of arsenic in HgCdTePLISSARD, S; GIUSTI, G; POLGE, B et al.Journal of electronic materials. 2007, Vol 36, Num 8, pp 919-924, issn 0361-5235, 6 p.Conference Paper

Improved high resistivity ZnS films on HgCdTe for passivation of infrared devicesBHAN, R. K; SRIVASTAVA, V; SAXENA, R. S et al.Infrared physics & technology. 2010, Vol 53, Num 5, pp 404-409, issn 1350-4495, 6 p.Article