kw.\*:("IMPURETE ARSENIC")
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THE DIFFUSION OF ION-IMPLANTED ARSENIC IN SILICON.FAIR RB; TSAI JCC.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 12; PP. 1689-1696; BIBL. 35 REF.Article
A COMPARISON OF CALCULATED ARSENIC IMPLANTATION PROFILES IN SILICON WITH EXPERIMENTAL RESULTS.MENDE G.1978; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1978; VOL. 45; NO 2; PP. K121-K123; BIBL. 5 REF.Article
CO LASER ANNEALING OF ARSENIC-IMPLANTED SILICONDELFINO M.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 5; PP. 3923-3925; BIBL. 9 REF.Article
DETECTION BY LOW TEMPERATURE PHOTOLUMINESCENCE OF OXYGEN RECOILS IN "THROUGH-OXIDE" ARSENIC IMPLANTED SILICON.MYERS DR; STREETMAN BG.1976; SOLID STATE COMMUNIC.; U.S.A.; DA. 1976; VOL. 18; NO 7; PP. 815-817; BIBL. 14 REF.Article
PULSED THERMAL ANNEALING OF ARSENIC-IMPLANTED SILICONSCOVELL PD.1981; ELECTRON. LETT.; ISSN 0013-5194; BGR; DA. 1981; VOL. 17; NO 12; PP. 403-405; BIBL. 11 REF.Article
FROTTEMENT INTERNE PAR LES DISLOCATIONS DANS LES TRICHITES CRISTALLINES DE SILICIUMANTIPOV SA; BELYAVSKIJ VI; DROZHZHIN AI et al.1982; FIZIKA TVERDOGO TELA; ISSN 0367-3294; SUN; DA. 1982; VOL. 24; NO 11; PP. 3268-3272; BIBL. 19 REF.Article
SUPPRESSION DE L'EFFET STAEBLER-WRONSKI DANS LE SILICIUM HYDROGENE AMORPHE DANS LE CAS D'IMPLANTATION IONIQUE DU GALLIUM ET DE L'ARSENICAKIMCHENKO IP; VAVILOV VS; DYMOVA NN et al.1981; PIS'MA ZH. EKSPER. TEOR. FIZ.; SUN; DA. 1981; VOL. 33; NO 9; PP. 448-451; BIBL. 5 REF.Article
MO2N/MO GATE MOSFETSKIM MJ; BROWN DM.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 6; PP. 598-602; BIBL. 9 REF.Article
THRESHOLD SHIFTING OF NMOS TRANSISTORS BY ARSENIC ION IMPLANTATION PRIOR TO GATE OXIDATION = AJUSTAGE DU SEUIL DE TRANSISTORS NMOS PAR IMPLANTATION D'IONS D'ARSENIC AVANT L'OXYDATION DE LA GRILLEDE SOUZA JP; CHARRY E.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 10; PP. 1176-1178; BIBL. 9 REF.Article
SELECTIVE EXCITATION OF PROBE ION LUMINESCENCE (SEPIL)WRIGHT JC; GUSTAFSON FJ; PORTER LC et al.1978; A.C.S. SYMP. SER.; USA; DA. 1978; VOL. 85; PP. 1-11; BIBL. 12 REF.Article
EHD-PHOTOLUMINESCENCE KINETICS IN DOPED GE.ZHURKIN BG; KARUZKII AL; STRAKOV VP et al.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 20; NO 3; PP. 207-209; BIBL. 18 REF.Article
ION BEAM ANNEALED AS+ IMPLANTED SILICONHEMMENT PLF; MAYDELL ONDRUSZ E; SCOVELL PD et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 2; PP. 57-59; BIBL. 9 REF.Article
ACTIVATION OF HIGH AS AND SB CONCENTRATIONS IN SILICON BY LASER IRRADIATIONHEDLER H; ANDRA W; GOTZ G et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 73; NO 2; PP. 333-338; ABS. GER; BIBL. 11 REF.Article
ARSENIC DIFFUSION IN SILICON FROM SPIN-ON DOPED GLASS BY LASER MELTINGWU S.1982; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 6; PP. 71-88; 3 P.; BIBL. 8 REF.Article
ELECTRONIC PROPERTIES OF LASER (ANNEALED (111)-(1X1) SURFACES OF HIGHLY DOPED SILICONEASTMAN DE; HEIMANN P; HIMPSEL FJ et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 6; PP. 3647-3650; BIBL. DISSEM.Article
METASTABLE AS-CONCENTRATIONS IN SI ACHIEVED BY ION IMPLANTATION AND RAPID THERMAL ANNEALINGLIETOILA A; GOLD RB; GIBBONS JF et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 1; PP. 230-232; BIBL. 12 REF.Article
MODIFICATIONS OF THE AMPHOTERIC ACTIVITY OF GE IMPLANTS IN GAAS BY DUAL IMPLANTATION OF GE AND ASYEO YK; PEDROTTI FL; PARK YS et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 11; PP. 5785-5788; BIBL. 10 REF.Article
RECOMBINATION OF DONOR BOUND-EXCITONS IN GERMANIUMKLINGENSTEIN W; SCHMID W.1979; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1979; VOL. 20; NO 8; PP. 3285-3291; BIBL. 28 REF.Article
REDISTRIBUTION OF DOPANTS IN ION-IMPLANTED SILICON BY PULSED-LASER ANNEALINGWHITE CW; CHRISTIE WH; APPLETON BR et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 7; PP. 662-664; BIBL. 11 REF.Article
LASER DIFFUSION IN SILICON FROM SPIN-ON ARSENIC GLASSSCHYI YI WU.1983; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1983; VOL. 130; NO 1; PP. 199-202; BIBL. 9 REF.Article
COMPARISON OF SOLUBILITY LIMITS AND ELECTRICAL ACTIVITIES FOR ANTIMONY AND ARSENIC ION IMPLANTED SILICONGRAZIANI T; SHORT KT; WILLIAMS JS et al.1982; PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1982; VOL. 91; NO 5; PP. 231-233; BIBL. 18 REF.Article
ETUDES DES EMETTEURS SUBMICRONIQUES = STUDY OF SUB-MICROELECTRONIC TRANSMITTERSLEBAILLY J; DAVID GR; BOISSY MC et al.1981; ; FRA; DA. 1981; DGRST/707 0767; 22 P.; 30 CM; BIBL. 47 REF.; ACTION CONCERTEE: COMPOSANTS ELECTRONIQUESReport
ARSENIC-IMPLANTED POLYSILICON LAYERSRYSSEL H; IBERL H; BLEIER M et al.1981; APPL. PHYS.; ISSN 0340-3793; DEU; DA. 1981; VOL. 24; NO 3; PP. 197-200; BIBL. 17 REF.Article
EDGE EMISSION IN PHOSPHORUS-IMPLANTED AND ARSENIC-IMPLANTED ZINC TELLURIDEVERITY D; BRYANT FJ.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 60; NO 2; PP. 521-529; ABS. GER; BIBL. 33 REF.Article
ARSENIC ION-IMPLANTED SHALLOW JUNCTIONWADA Y; HASHIMOTO N.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 2; PP. 461-466; BIBL. 15 REF.Article