CATHODOLUMINESCENCE OF UNDOPED AND ZN- DOPED GAN EPITAXIAL LAYERS.MARASINA LA; PIKHTIN AN; PICHUGIN IG et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 38; NO 2; PP. 753-760; ABS. RUSSE; BIBL. 11 REF.Article

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ON EARLY STAGE DEGRADATION IN ZN DIFFUSED GAAS LEDCOGNETTI C; CONTI M; CHIARETTI G et al.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 11; PP. 1093-1097; BIBL. 22 REF.Article

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INFLUENCE D'UN ECLAIREMENT AUXILIAIRE EXTRINSEQUE SUR LA LUMINESCENCE DE GAP DOPE PAR ZN, ONECHAEV VM; POLTORATSKIJ EH A; SURIS RA et al.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 1; PP. 129-132; BIBL. 8 REF.Article

ATTENUATION DE LA LUMIERE PAR LES PRECIPITES D'IMPURETE DANS GAP <ZN>ABAGYAN SA; KRUPYSHEV RS; KUZNETSOV YU N et al.1978; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1978; VOL. 12; NO 5; PP. 837-840; BIBL. 7 REF.Article

SPECTRES D'ABSORPTION DE MONOCRISTAUX NATURELS DE ZNSTODOROV S; SEMERDZHIEV KH; MLADZHOV L et al.1970; GOD. VISSH. TEKH. UCHEBN. ZAVED., FIZ.; BALG.; DA. 1970; VOL. 7; NO 2; PP. 43-50; ABS. RUSSE FR.; BIBL. 17 REF.Serial Issue

IMPURITY PROFILE ON GAP DIODES IN THE NEIGHBOURHOOD OF A P-N JUNCTIONOELGART G; ARNOLD G.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 65; NO 2; PP. 609-618; ABS. GER; BIBL. 19 REF.Article

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PHOTOCONDUCTIVITE DU NITRURE DE GALLIUMSIDOROV VG; SHAGALOV MD; SHALABUTOV YU K et al.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 1; PP. 168-171; BIBL. 14 REF.Article

PROPERTIES OF ZN-DOPED VPE-GROWN GAN. I: LUMINESCENCE DATA IN RELATION TO DOPING CONDITIONSMONEMAR B; LAGERSTEDT O; GISLASON HP et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 1; PP. 625-639; BIBL. 51 REF.Article

RAMAN STUDIES OF THE ZN ACCEPTOR IN GAP.CHASE LL; HAYES W; RYAN JF et al.1977; J. PHYS. C; G.B.; DA. 1977; VOL. 10; NO 15; PP. 2957-2966; BIBL. 27 REF.Article

CATHODOLUMINESCENCE DU DIAMANT NATUREL DUE AUX IMPURETES IMPLANTEESVAVILOV VS; GIPPIUS AA; DRAVIN VA et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 11; PP. 1996-2000; BIBL. 10 REF.Article

DOMAINES PHOTOSENSIBLES DANS LA BASE D'UN PHOTORECEPTEUR SARUTYUNYAN VM; MARUKYAN V SH; PANOSYAN ZH R et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 5; PP. 773-775; BIBL. 8 REF.Article

EXPERIMENTAL INVESTIGATION OF A MULTI-STAGE PURIFICATION PROCESS FOR METALSNAZAR AM; PRATES M; CLYNE TW et al.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 55; NO 2; PP. 317-324; BIBL. 17 REF.Article

CHARGE TRANSFER BANDS IN ZN⁺ DOPED POTASSIUM HALIDESMORENO M.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1980; VOL. 98; NO 1; PP. K43-K45; BIBL. 10 REF.Article

SUR LE MECANISME D'IONISATION DE PHOTOIMPACT ET LES OSCILLATIONS DANS LE SPECTRE DE PHOTOCONDUCTIVITE EXTRINSEQUE DU GERMANIUMASTAF'EV NI; BARNIK MI; BEGLOV BI et al.1980; RADIOTEKH. I ELEKTRON.; SUN; DA. 1980; VOL. 25; NO 7; PP. 1488-1494; BIBL. 17 REF.Article

CATHODOLUMINESCENCE STUDY OF ZN DOPED GANBOULOU M; JACOB G; BOIS D et al.1978; REV. PHYS. APPL.; FRA; DA. 1978; VOL. 13; NO 11; PP. 555-563; ABS. FRE; BIBL. 39 REF.Article

COMPARISON OF ELECTRICAL PROFILES FROM HOT AND COLD IMPLANTATIONS OF ZINC IONS INTO GAAS.KULAR SS; SEALY BJ; STEPHENS KG et al.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 1; PP. 22-23; BIBL. 8 REF.Article

REACTION KINETICS IN GAP:(ZN,O)FEENSTRA RM; MCGILL TC.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 10; PP. 6329-6337; BIBL. 24 REF.Article

ANNEALING BEHAVIOR OF ZN-DOPED P-TYPE INSESHIGETOMI S; IKARI T; KOGA Y et al.SHIGETOMI S; 1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 5; PART. 2; PP. 254-256; BIBL. 9 REF.Article

SPECTRE D'ENERGIE DE CERTAINES IMPURETES DANS LES SOLUTIONS SOLIDES DU SYSTEME GE-SIBAJDAKOVA AP; BELOKUROVA IN; DEGTYAREV VF et al.1981; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1981; VOL. 17; NO 11; PP. 1951-1953; BIBL. 8 REF.Article

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