MESURE DE LA DUREE D'ACTION DE LA TENSION INVERSE SUR DES THYRISTORS A BLOQUAGEPISKAREV AN; SINITSYN VA.1976; IZVEST. VYSSH. UCHEBN. ZAVED., PRIBOROSTR.; S.S.S.R.; DA. 1976; VOL. 19; NO 6; PP. 100-102; BIBL. 1 REF.Article

PERFORMANCE OF IN_XGA_1-XAS_YP_1-Y PHOTODIODES WITH DARK CURRENT LIMITED BY DIFFUSION GENERATION RECOMBINATION, AND TUNNELINGFORREST SR.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 2; PP. 217-226; BIBL. 25 REF.Article

A REVERSE-BIAS SAFE OPERATING AREA TRANSISTOR TESTERBERNING DW.1979; NATION. BUR. STAND., SPEC. PUBL.; USA; DA. 1979; NO 400-54; 37 P.; BIBL. 2 REF.Serial Issue

A DESIGN TECHNIQUE FOR SPECIFIC REVERSE BIAS CHARACTERISTICS OF A P-I-N DIODE.RATNAKUMAR KN; KAKATI D.1978; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1978; VOL. 45; NO 1; PP. K13-K16; BIBL. 4 REF.Article

THYRISTORSCHUTZ MIT HALBLEITERN-WIRTSCHAFTLICH UND SICHER. = PROTECTION ECONOMIQUE ET SURE DE THYRISTORS PAR SEMI-CONDUCTEURSWETZEL P.1977; B.B.C. NACHR.; DTSCH.; DA. 1977; VOL. 59; NO 3-4; PP. 152-158; BIBL. 3 REF.Article

IMPROVED Y-BRIDGE FOR REVERSE-BIASED DIODE MEASUREMENTS.SYNEK S; VASINA P.1976; ACTA PHYS. SLOV.; TCHECOSL.; DA. 1976; VOL. 26; NO 4; PP. 232-238; ABS. RUSSE; BIBL. 4 REF.Article

RESISTANCE NEGATIVE COMMANDEE PAR LE COURANT DANS DES DIODES DE GAAS EN POLARISATION INVERSEBRODOVOJ VA; KORONKEVICH VN; PEKA GP et al.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 1; PP. 29-34; BIBL. 13 REF.Article

SWITCHING PHENOMENA IN REVERSE-BIASED GOLD-DIFFUSED SILICON P⁺-I - N⁺ DIODESSUPADECH S; HENG T.1979; PROC. I.E.E.E.; USA; DA. 1979; VOL. 67; NO 4; PP. 692-693; BIBL. 2 REF.Article

INTERPRETACJA CHARAKTERYSTYK STATYCZNYCH ZAPOROWO SPOLARYZOWANEGO KRZEMOWEGO ZLAZA P-N = INTERPRETATION DES CARACTERISTIQUES STATIQUES D'UNE FONCTION PN EN SILICIUM POLARISEE EN INVERSESTEPOWICZ WJ.1978; ROZPR. ELEKTROTECH.; POL; DA. 1978; VOL. 34; NO 2; PP. 307-313; ABS. ENG/FRE/GER/RUS; BIBL. 5 REF.Article

ETUDE ANALYTIQUE D'UNE DIODE A JONCTION ABRUPTE EN POLARISATION INVERSEDESTINE J.1979; REV. E; BEL; DA. 1979; VOL. 9; NO 7; PP. 137-146; BIBL. 19 REF.Serial Issue

EFFET DE COMMUTATION DANS DES STRUCTURES PI -NU -N A BASE DE GAAS (FE) EN POLARISATION INVERSEGAMAN VI; DIAMANT VM; FUKS GM et al.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 12; PP. 2302-2307; BIBL. 9 REF.Article

INDUCED PERMANENT NEGATIVE RESISTANCES IN REVERSE-BIASED P-N JUNCTIONSPOOKAIYAUDOM S.1978; INTERNATIONAL. J. ELECTRON.; GBR; DA. 1978; VOL. 44; NO 3; PP. 329-332; BIBL. 2 REF.Article

OPTIMISATION EXPERIMENTALE DE LA TENUE EN ENERGIE INVERSE SUR CHARGE INDUCTIVE DES TRANSISTORS DE PUISSANCEPEYRE LAVIGNE ANDRE; QUOIRIN JEAN BAPTISTE.1978; ; FRA; DA. 1978; DGRST/77 7 1013; 57 P.; 30 CM; BIBL. 3 REF.; ACTION CONCERTEE: COMPOSANTS ET CIRCUITS MICROMINIATURISESReport

REVERSE BIAS LIFE TEST STABILITY OF TANTALUM-TITANIUM ANODIC OXIDE THIN FILM CAPACITORS.PETERS FG; SCHWARTZ N.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 6; PP. 949-951; BIBL. 14 REF.Article

AN ALGORITHM FOR TWO-DIMENSIONAL SIMULATION OF REVERSE-BIASED BEVELED P-N JUNCTIONSKUMAR R; CHAMBERLAIN SG; ROULSTON DJ et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 4; PP. 309-311; BIBL. 8 REF.Article

MODEL OF 1/F NOISE IN ION-IMPLANTED RESISTORS AS A FUNCTION OF THE RESISTANCE, DETERMINED BY A REVERSE BIAS VOLTAGEBECK HGE.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 5; PP. 475-478; BIBL. 12 REF.Article

P-I-N DIODE REVERSE-BIAS SWITCHING VIA INDUCTIVE DISCHARGINGGEORGOPOULOS CJ; MAKIOS V.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 23; PP. 723-725; BIBL. 4 REF.Article

1/F NOISE MEASUREMENTS IN ION-IMPLANTED SILICON RESISTORS AS A FUNCTION OF THE SUBSTRATE REVERSE BIAS VOLTAGE.BECK HGE.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 12; PP. 951-954; BIBL. 3 REF.Article

PORTEURS CHAUDS DANS DES DIODES DE ZNSE A BARRIERES SUPERFICIELLES EN POLARISATION INVERSEBABENKO AV; VOJTSEKHOVSKIJ AV; KOSYACHENKO LA et al.1979; UKRAIN. FIZ. ZH.; UKR; DA. 1979; VOL. 24; NO 1; PP. 54-57; ABS. ENG; BIBL. 6 REF.Article

HOLE-TRAPPING EFFECTS IN REVERSE-BIASED SI-DOPED AL SCHOTTKY-BARRIER DIODES.SULLIVAN MJ; REITH TM; AV RON M et al.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 6; PP. 3574-3577; BIBL. 14 REF.Article

NEGATIVE RESISTANCE OBSERVED IN INSB DIODES REVERSE BIASED.ITOH S; OHTA Y; FUJIYASU H et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 10; PP. 701-703; BIBL. 6 REF.Article

MOS-STRUKTUREN MIT SPERRSEITIG VORGESPANNTEM EXTERNEM PN - UEBERGANG BEI LINEARER GATESPANNUNGSANSTEUERUNG. II. BESTIMMUNG VON N_ST UND SIGMA = STRUCTURES MOS COMPORTANT UNE JONCTION PN EXTERNE POLARISEE DANS LE SENS DU BLOCAGE, UNE TENSION LINEAIRE DE COMMANDE ETANT APPLIQUEE A LA GRILLE. II. DETERMINATION DE N_ST ET SIGMAKADEN G; REIMER H.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 59; NO 2; PP. 719-729; ABS. ENG; BIBL. 19 REF.Article

EFFECT OF REVERSE SUBSTRATE BIAS ON THE MINIGAP IN SI INVERSION LAYERSCOLE T; LAKHANI AA; STILES PJ et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 39; NO 1; PP. 127-132; BIBL. 12 REF.Article

LES DIODES A CAPACITE VARIABLERATEAU R.1980; ELECTRON. APPL.; FRA; DA. 1980; NO 13; PP. 27-33Article

ELECTROLUMINESCENCE IN REVERSE-BIASED ZNS:MN SCHOTTKY DIODESGORDON NT; RYALL MD; ALLEN JW et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 9; PP. 691-692; BIBL. 8 REF.Article