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Implant and characterization of highly concentrated Fe deep centers in InPGASPAROTTO, A; CESCA, T; EL HABRA, N et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 91-92, pp 503-507, issn 0921-5107Conference Paper

Growth of semi-insulating InP with uniform axial Fe doping by a double-crucible LEC techniqueFORNARI, R; THIRUMAVALAVAN, M; GILIOLI, E et al.Journal of crystal growth. 1997, Vol 179, Num 1-2, pp 57-66, issn 0022-0248Article

The 'fractional thermally stimulated current' (FTSC) method : application to deep impurity levels in semi-insulating InPFASBENDER, R; HIRT, G; THOMS, M et al.Semiconductor science and technology. 1996, Vol 11, Num 6, pp 935-940, issn 0268-1242Article

InP:Fe semi-insulating layers by chemical beam epitaxyRIGO, C; MADELLA, M; PAPUZZA, C et al.Journal of crystal growth. 1996, Vol 164, Num 1-4, pp 430-433, issn 0022-0248Conference Paper

Subpicosecond carrier lifetime in InPWEI-XI CHEN; PENG-FEI JIAO; SHU-MIN WANG et al.Solid state communications. 1994, Vol 91, Num 12, pp 945-947, issn 0038-1098Article

Low frequency dielectric characterization of semi-insulating iron-doped InPGREEN, P. W.Semiconductor science and technology. 1998, Vol 13, Num 1, pp 116-123, issn 0268-1242Article

Correlation among structural, electrical, and deep-level properties of Fe centers implanted in InPGASPAROTTO, A; CESCA, T; FRABONI, B et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 403-406, issn 0921-4526, 4 p.Conference Paper

Implementation and comparative evaluation of various architectures of ultrasonic photorefractive sensorsDE ROSSI, S; DELAYE, Ph; LAUNAY, J. C et al.Optical materials (Amsterdam). 2001, Vol 18, Num 1, pp 45-48, issn 0925-3467Conference Paper

Deep centers in undoped semi-insulating InPFANG, Z.-Q; LOOK, D. C; UCHIDA, M et al.Journal of electronic materials. 1998, Vol 27, Num 10, pp L68-L71, issn 0361-5235Article

Isotope splitting of the zero-phonon line of Fe²⁺ in cubic III-V semiconductorsCOLIGNON, D; MAILLEUX, E; KARTHEUSER, E et al.Solid state communications. 1998, Vol 105, Num 4, pp 205-209, issn 0038-1098Article

Growth of long-length 3 inch diameter Fe-doped InP single crystalsKOHIRO, K; OHTA, M; ODA, O et al.Journal of crystal growth. 1996, Vol 158, Num 3, pp 197-204, issn 0022-0248Article

A study of iron incorporation in LEC-grown indium phosphideFORNARI, R; GILIOLI, E; MORIGLIONI, M et al.Journal of crystal growth. 1996, Vol 166, Num 1-4, pp 572-577, issn 0022-0248Conference Paper

Alloy composition dependence of defect energy levels in Ga_xIn_1-xP/InP:Fe and Ga_xIn_1-xP/InP:S (x≤0.24)ZHAO, Y.-G; BREBNER, J. L; MASUT, R. A et al.Journal of applied physics. 1993, Vol 74, Num 3, pp 1862-1867, issn 0021-8979Article

On the electrical activity of Fe in LEC indium phosphideFORNARI, R.Semiconductor science and technology. 1999, Vol 14, Num 3, pp 246-250, issn 0268-1242Article

Determination of quadratic electro-optic (Kerr) coefficients of InP:Fe at 1064 nm by photorefractive two-wave mixingDING, Y; EICHLER, H. J.Optics communications. 1996, Vol 123, Num 4-6, pp 642-648, issn 0030-4018Article

The Jahn-Teller effect in the ⁵T₂ state of Fe²⁺ in III-V materialsGAVAIX, A. M.Journal of physics. Condensed matter (Print). 1996, Vol 8, Num 9, pp 1163-1168, issn 0953-8984Article

Piezoelectric resonators of InP:FeKLIER, E; NEDBAL, J.Czechoslovak journal of physics. 1994, Vol 44, Num 6, pp 575-584, issn 0011-4626Article

Fully passivated AR coated InP/InGaAs MSM photodetectorsKOLLAKOWSKI, S; SCHADE, U; BOTTCHER, E. H et al.IEEE photonics technology letters. 1994, Vol 6, Num 11, pp 1324-1326, issn 1041-1135Article

A study of Fe-doped and undoped InP by surface photovoltage spectroscopyBURSTEIN, L; SHAPIRA, Y.Semiconductor science and technology. 1993, Vol 8, Num 9, pp 1724-1727, issn 0268-1242Article

High-frequency GaInAsP/InP laser mesas in <-110> direction with thick semi-insulating InP:FeLOURDUDOSS, S; KJEBON, O; WALLIN, J et al.IEEE photonics technology letters. 1993, Vol 5, Num 10, pp 1119-1122, issn 1041-1135Article

Optical phase lock loop with a photorefractive optical beam combinerDAVIDSON, F; FIELD, C. T.IEEE photonics technology letters. 1993, Vol 5, Num 10, pp 1238-1240, issn 1041-1135Article

Deep-level electroluminescence at 3.5 μm from semi-insulating InP layers ion implanted with FeTROCCOLI, Mariano; SCAMARCIO, Gaetano; FRABONI, Beatrice et al.Semiconductor science and technology. 2001, Vol 16, Num 1, pp L1-L3, issn 0268-1242Article

Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiancesDONG ZHIYUAN; ZHAO YOUWEN; ZENG YIPING et al.Journal of crystal growth. 2003, Vol 259, Num 1-2, pp 1-7, issn 0022-0248, 7 p.Article

Assessment of electrical and optical properties of heavily Fe-implanted semi-insulating InPGASPAROTTO, A; FRABONI, B; PRIOLO, F et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2001, Vol 80, Num 1-3, pp 202-205, issn 0921-5107Conference Paper