Fabrication of S-N-S junction with the normal layer of InSbHATO, T; AKAIKE, H; TAKAI, Y et al.Japanese journal of applied physics. 1991, Vol 30, Num 7B, pp L1273-L1275, issn 0021-4922, 2Article

Optical concentrators for light emitting diodesASHLEY, T; DUTTON, D. T; ELLIOTT, C. T et al.SPIE proceedings series. 1998, pp 43-50, isbn 0-8194-2728-4Conference Paper

Recent investigations on the growth of antimony based semiconductorsBHAT, H. L.SPIE proceedings series. 1998, pp 221-227, isbn 0-8194-2756-X, 2VolConference Paper

Long-wavelength low-threshold lasers based on III-V compoundsAIDARALIEV, M; ZOTOVA, N. V; KARANDASHEV, S. A et al.Semiconductors (Woodbury, N.Y.). 1993, Vol 27, Num 1, pp 10-15, issn 1063-7826Article

Residual deformation in epitaxial layers of InGaAsSb, InAsSbP, and InAsSb on an InAs substrateKUSHKIMBAEVA, B. ZH; MATVEEV, B. A; STUS', N. M et al.Soviet physics. Crystallography. 1990, Vol 35, Num 5, pp 772-773, issn 0038-5638Article

Semiconductor superlattices and quantum wells for infrared optoelectronicsSIZOV, F. F; ROGALSKI, A.Progress in quantum electronics. 1993, Vol 17, Num 2, pp 93-164, issn 0079-6727Article

Scanning-tunneling-microscopy study of InSb(110)WHITMAN, L. J; STROSCIO, J. A; DRAGOSET, R. A et al.Physical review. B, Condensed matter. 1990, Vol 42, Num 11, pp 7288-7291, issn 0163-1829Article

4 - 10μm positive and negative luminescent diodesASHLEY, T; BESWICK, J. A; CROWDER, J. G et al.SPIE proceedings series. 1998, pp 104-112, isbn 0-8194-2718-7Conference Paper

Investigation of the system InSb-SiO₂ by spectroscopic multiangle ellipsometryRUSSEV, S; VALCHEVA, E; GERMANOVA, K et al.Thin solid films. 1993, Vol 233, Num 1-2, pp 231-235, issn 0040-6090Conference Paper

The reverse motion of screw dislocations in indium antimonide crystalsBARBASHOV, V. I; RODZINA, T. V.Physica status solidi. A. Applied research. 1990, Vol 121, Num 1, pp K27-K29, issn 0031-8965Article

InSb/In_1-xAI_xSb strained-layer superlattices grown by magnetron sputter epitaxyWEBB, J. B; YOUSEFI, G. H; ROUSINA, R et al.Applied physics letters. 1992, Vol 60, Num 8, pp 998-1000, issn 0003-6951Article

RHEED intensity effects during the growth of InAs, InSb and In(As,Sb) by molecular beam epitaxyFERGUSON, I. T; DE OLIVEIRA, A. G; JOYCE, B. A et al.Journal of crystal growth. 1992, Vol 121, Num 3, pp 267-277, issn 0022-0248Article

Infrared magneto-optical and photoluminescence studies of the electronic properties of In(As,Sb) strained-layer superlatticesKURTZ, S. R; BIEFELD, R. M.Physical review. B, Condensed matter. 1991, Vol 44, Num 3, pp 1143-1149, issn 0163-1829Article

Pressure and temperature dependences of the thermal conductivity of gallium and indium antimonides and their solid solutionsMAGOMEDOV, YA. B; KRAMYNINA, N. L; ISMAILOV, SH. M et al.Soviet physics. Solid state. 1992, Vol 34, Num 9, pp 1486-1489, issn 0038-5654Article

Synthesis of InSb and In_x Ga_1-xSb thin films from electrodeposited elemental layersMENGOLI, G; MUSIANI, M. M; PAOLUCCI, F et al.Journal of applied electrochemistry. 1991, Vol 21, Num 10, pp 863-868, issn 0021-891XArticle

The InSb detector characteristics for astronomical conditionsZHILYAEV, B. E; PETUKHOV, V. N; KESSEL'MAN, I. G et al.Kinematika i fizika nebesnyh tel. 1992, Vol 8, Num 5, pp 93-96, issn 0233-7665Article

Completely erasable phase change optical diskIWASAKI, H; IDE, Y; HARIGAYA, M et al.Japanese journal of applied physics. 1992, Vol 31, Num 2B, pp 461-465, issn 0021-4922, 1Article

The internal strain parameter of indium antimonideCOUSINS, C. S. G; GERWARD, L; STAUN OLSEN, J et al.Physica status solidi. A. Applied research. 1991, Vol 126, Num 1, pp 135-141, issn 0031-8965Article

Raman scattering study of longitudinal acoustic and optic phonons in InSb/In_1-xAl_xSb strained-layer superlatticesGNEZDILOV, V. P; LOCKWOOD, D. J; WEBB, J. B et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 617-620, issn 0038-1101Conference Paper

Low temperature resistance of p-InSb(Mn) = The present paper studies the influence of Mn²⁺ concentration, compensation and magnetic field on the thermosensitivity of indium antimonide thermoresistors in the millikelvin temperature regionOBUKHOV, S. A; NEGANOV, B. S; KIDELEV, YU. F et al.Cryogenics (Guildford). 1991, Vol 31, Num 10, pp 874-877, issn 0011-2275Article

Linewidth enhancement factor to GalnSbAs/GaSb lasersBARANOV, A. N.Applied physics letters. 1991, Vol 59, Num 19, pp 2360-2362, issn 0003-6951Article

Recent advances in In(As, Sb) SLS and QW LED's for the 3-10 micron regionPHILLIPS, C; HARDAWAY, H; HEBER, J et al.SPIE proceedings series. 1998, pp 154-160, isbn 0-8194-2718-7Conference Paper

Recent progress in GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengthsSHELLENBARGERA, Z; MAUK, M; COX, J et al.SPIE proceedings series. 1998, pp 138-145, isbn 0-8194-2726-8Conference Paper

Photoreflectance measurements of the E₁ and E₁ = Δ₁ optical transitions in In_1-xAl_xSb epilayersXU YAOZHOU; BEAULIEU, Y; WEBB, J. B et al.Solid state communications. 1993, Vol 87, Num 1, pp 9-11, issn 0038-1098Article

Propagation characteristics of a slow surface wave in a 70 GHz solid-plasma waveguide containing an n-InSb slab carrying an applied currentOBUNAI, T.IEE proceedings. Part H. Microwaves, antennas and propagation. 1993, Vol 140, Num 3, pp 201-210, issn 0950-107XArticle