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Emission mechanism in In_0.53Ga_0.47As/InP quantum-well heterostructures grown by chloride vapor-phase epitaxyKODAMA, K; KOMENO, J; OZEKI, M et al.Japanese journal of applied physics. 1984, Vol 23, Num 12, pp 1653-1654, issn 0021-4922Article

Photoluminescence investigation of Dy incorporation into InP during liquid phase epitaxyPÖDÖR, B; VENGER, E. F; KRYSHTAB, T. G et al.SPIE proceedings series. 1998, pp 197-201, isbn 0-8194-2808-6Conference Paper

Characterization and ultrafiltration of semiconductor indium phosphide (InP) wastewater for recyclingWU, M; SUN, D. D; TAY, J. H et al.Environmental technology. 2005, Vol 26, Num 1, pp 111-119, issn 0959-3330, 9 p.Article

Pressure and temperature tuning of red laser diodes towards yellow and greenBOHDAN, Roland; YVONYAK, Yurij; MROZOWICZ, Milan et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 8, pp 1841-1844, issn 1862-6300, 4 p.Article

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Precise quantized Hall resistance measurements in GaAs/Al_xGa_1-xAs and In_xGa_1-xAs/InP heterostructuresDELAHAYE, F; DOMINGUEZ, D; ALEXANDRE, F et al.Metrologia. 1986, Vol 22, Num 2, pp 103-110, issn 0026-1394Article

Randomly-oriented indium phosphide nanowires for optoelectronicsKOBAYASHI, Nobuhiko P; LOGEESWARAN, V. J; XUEMA LI et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 67790E.1-67790E.11, issn 0277-786X, isbn 978-0-8194-6939-7, 1VolConference Paper

Investigation of surface cleaning procedure of InP: S (1 0 0) substrates by high resolution XPSADAMIEC, M; TALIK, E; GŁADKI, A et al.Applied surface science. 2006, Vol 252, Num 10, pp 3481-3487, issn 0169-4332, 7 p.Article

Cross-sectional scanning tunneling microscopy and spectroscopy of strain in buried heterostructure lasersCOBLEY, R. J; TENG, K. S; MAFFEIS, T. G. G et al.Surface science. 2006, Vol 600, Num 14, pp 2857-2859, issn 0039-6028, 3 p.Article

Phosphine and tertiarybutylphosphine adsorption on the indium-rich InP (001)-(2 x 4) surfaceWOO, R. L; DAS, U; CHENG, S. F et al.Surface science. 2006, Vol 600, Num 21, pp 4888-4895, issn 0039-6028, 8 p.Article

Morphological and chemical evolution on InP(100) surface irradiated with femtosecond laserQIAN, H. X; ZHOU, W; ZHENG, H. Y et al.Surface science. 2005, Vol 595, Num 1-3, pp 49-55, issn 0039-6028, 7 p.Article

Ab initio calculations and dynamical properties of the Se:InP(110) and Te:InP(110)CANGÖZEN, M; TÜTÜNCÜ, H. M; GÜNEY, Y et al.Surface science. 2006, Vol 600, Num 18, pp 3526-3530, issn 0039-6028, 5 p.Conference Paper

Investigation on optical absorption properties of electrochemically formed porous InP using photoelectric conversion devicesKUMAZAKI, Yusuke; KUDO, Tomohito; YATABE, Zenji et al.Applied surface science. 2013, Vol 279, pp 116-120, issn 0169-4332, 5 p.Article

Fabrication of microrods and microtips of InP by electrochemical etchingZHANKUN WENG; AIMIN LIU; YANHONG LIU et al.Applied surface science. 2007, Vol 253, Num 11, pp 5133-5136, issn 0169-4332, 4 p.Article

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