PHOTOREPONSE DE JONCTIONS P⁺-P EN GERMANIUMMARMUR I YA; OKSMAN YA A; PERLIN E YU et al.1983; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1983; VOL. 17; NO 3; PP. 469-473; BIBL. 13 REF.Article

Modified drift field model for high- low transition in solar cells = Modèle à champ interne modifié pour la transition PP⁺ dans des piles solairesDHARIWAL, S. R; GADRE, R; KULSHRESHTHA, A. P et al.Solid-state electronics. 1983, Vol 26, Num 11, pp 1083-1088, issn 0038-1101Article

Modeling of minority-carrier surface recombination velocity at low-high junction of an n⁺-p-p⁺ silicon diodeSINGH, S. N; SINGH, P. K.I.E.E.E. transactions on electron devices. 1991, Vol 38, Num 2, pp 337-343, issn 0018-9383, 7 p.Article

Optimization of high-efficiency n⁺-p-p⁺ back-surface-field silicon solar cellsMORITA, K; SAITOH, T; UEMATSU, T et al.Japanese journal of applied physics. 1987, Vol 26, Num 5, pp 547-549, issn 0021-4922, 2Article

Organic photoelectrodes based on p-p iso-type junctionsHARIMA, Y; YAMASHITA, K.Journal of physical chemistry (1952). 1985, Vol 89, Num 25, pp 5325-5327, issn 0022-3654Article

Influence of hole recombination rate on microwave detection in compensated germaniumASMONTAS, S; BUMELIENE, S; GRADAUSKAS, J et al.Materials science forum. 2002, pp 143-146, issn 0255-5476, isbn 0-87849-890-7Conference Paper

Characterization of ultrashallow p⁺ profiles by spreading resistance measurementsMINONDO, M; ROCHE, D; JAUSSAUD, C et al.Japanese journal of applied physics. 1994, Vol 33, Num 5A, pp 2439-2443, issn 0021-4922, 1Article

CURRENT OSCILLATIONS IN HIGH-RESISTIVITY SILICON WITH DEEP LEVELSKAHLER E; KASSING R.1972; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1972; VOL. 13; NO 2; PP. 613-621; ABS. ALLEM.; BIBL. 14 REF.Serial Issue

TEMPERATURE-GRADIENT INSTABILITIES IN SEMICONDUCTOR JUNCTIONS.HANDEL PH.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 11; NO 4; PP. 1595-1599; BIBL. 6 REF.Article

MOS STRUCTURE WITH A P⁺P PROFILE.SINON R; HATERT R; VAN DE WIELE F et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 33; NO 2; PP. 661-671; ABS. FR.; BIBL. 9 REF.Article

Light induced change on the built-in potential of p/p⁺ structures and its effect on carrier lifetime measurementsVÄINÖLÄ, H; STORGARDS, J; YLI-KOSKI, M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 91-92, pp 421-424, issn 0921-5107Conference Paper

Kinetics of establishment of exclusion in p⁺-p Ge structures with a magnetic-field-induced anisotropic conductivityGUGA, K. Y; ILYUSHCHENKO, I. Y; TYBULEWICZ, A et al.Soviet physics. Semiconductors. 1992, Vol 26, Num 12, pp 1205-1207, issn 0038-5700Article

Double injection in Si:In devicesHURM, V; HORNUNG, J. C. R; MANCK, O et al.Journal of applied physics. 1985, Vol 58, Num 1, pp 588-597, issn 0021-8979Article

Multifunctional controlled IR-emitting unitGUGA, K. Yu; KOLLYUKH, O. G; LIPTUGA, A. I et al.Infrared physics & technology. 2006, Vol 47, Num 3, pp 267-272, issn 1350-4495, 6 p.Article

300 mm Epitaxy : challenges and opportunities from a wafer manufacturer's point of viewHANSSON, P.-O; FUERFANGER, M.Microelectronic engineering. 1999, Vol 45, Num 2-3, pp 127-133, issn 0167-9317Article

Rapid and cost effective technology development using TCAD : A case studySHAFIT, A; MCGINTY, J; FALLON, M et al.SPIE proceedings series. 1999, pp 234-240, isbn 0-8194-3223-7Conference Paper

Exclusion in the semiconductor p⁺-p-p⁺ structure under conditions of a temperature gradientMALYUTENKO, V. K; SOKOLOV, V. N; VAINBERG, V. V et al.Semiconductor science and technology. 1998, Vol 13, Num 1, pp 54-58, issn 0268-1242Article

Efficiency of boron gettering for iron impurities in p/p⁺epitaxial silicon wafersMIYAZAKI, M; MIYAZAKI, S; OGUSHI, S et al.Japanese journal of applied physics. 1997, Vol 36, Num 4A, pp L380-L381, issn 0021-4922, 2Article

Etudes théorique et expérimentale de l'exclusion dans des échantillons de longueur finie. Caractéristiques courant-tension stationnairesAKOPYAN, A. A; VITUSEVICH, S. A; MALYUTENKO, V. K et al.Fizika i tehnika poluprovodnikov. 1987, Vol 21, Num 10, pp 1783-1788, issn 0015-3222Article

Influence de l'état de surface sur l'exclusion des porteurs de charge dans les semiconducteursVITUSEVICH, S. A; MALOZOVSKIJ, YU. M; MALYUTENKO, V. K et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 5, pp 930-932, issn 0015-3222Article

Misfit dislocation interactions in low mismatch p/p⁺ SiFEICHTINGER, P; POUST, B; GOORSKY, M. S et al.Journal of physics. D, Applied physics (Print). 2001, Vol 34, Num 10A, pp A128-A132, issn 0022-3727Article

Influence of built-in potential on the effective surface recombination velocity for a heavily doped high-low junctionDE, S. S; GHOSH, A. K; BERA, M et al.Physica. B, Condensed matter. 1996, Vol 228, Num 3-4, pp 363-368, issn 0921-4526Article

High current p/p⁺-diamond schottky diodeEBERT, W; VESCAN, A; BORST, T. H et al.IEEE electron device letters. 1994, Vol 15, Num 8, pp 289-291, issn 0741-3106Article

Electrical and photoelectric properties of Pd-p-p+-InP diode structures and changes in these properties in a hydrogen atmosphereKOVALEVSKAYA, G. G; MEREDOV, M. M; RUSSU, E. V et al.Soviet physics. Semiconductors. 1992, Vol 26, Num 10, pp 978-981, issn 0038-5700Article

Internal gettering in epi-silicon prepared under different conditionsFRIGERI, C; BORIONETTI, G; GODIO, P et al.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 48, pp 13127-13134, issn 0953-8984, 8 p.Conference Paper