Room temperature operated diffraction limited λ ~ 3 μm diode lasers with 37 mW of continuous-wave output powerHOSODA, T; LIANG, R; KIPSHIDZE, G et al.Electronics letters. 2013, Vol 49, Num 10, pp 667-669, issn 0013-5194, 3 p.Article

Broadly tunable quantum-dot based ultra-short pulse laser system with different diffraction grating ordersALHAZIME, A; DING, Y; NIKITICHEV, D. I et al.Electronics letters. 2013, Vol 49, Num 5, pp 364-366, issn 0013-5194, 3 p.Article

Dynamic characteristics of InGaAs/InP multiple quantum well discrete mode laser diodes emitting at 2 μmO'CARROLL, J; BYRNE, D; KELLY, B et al.Electronics letters. 2014, Vol 50, Num 13, pp 948-950, issn 0013-5194, 3 p.Article

InGaAs/GaAs quantum well lasers grown on exact GaP/Si (001)XUE HUANG; YUNCHENG SONG; MASUDA, Taizo et al.Electronics letters. 2014, Vol 50, Num 17, pp 1226-1227, issn 0013-5194, 2 p.Article

III―V Semiconductor Quantum-Well Devices Grown by Metalorganic Chemical Vapor DepositionDUPUIS, Russell D.Proceedings of the IEEE. 2013, Vol 101, Num 10, pp 2188-2199, issn 0018-9219, 12 p.Article