Dislocation multiplication in GaAs: inhibition by dopingDJEMEL, A; CASTAING, J; BURLE-DURBEC, N et al.Revue de physique appliquée. 1989, Vol 24, Num 8, pp 779-793, issn 0035-1687, 15 p.Article

Advances in LEC growth of InP crystalsISELER, G. W.Journal of electronic materials. 1984, Vol 13, Num 6, pp 989-1011, issn 0361-5235Article

Existence of interstitialcy Zn atoms in GaAs:Zn grown by the liquid-encapsulated Czochralski techniqueKITANO, T; WATANABE, H; MATSUI, J et al.Applied physics letters. 1989, Vol 54, Num 22, pp 2201-2203, issn 0003-6951, 3 p.Article

Growth of low and homogeneous dislocation GaAs crystal by improved LEC techniqueSHIMADA, T; TERASHIMA, K; NAKAJIMA, H et al.Japanese journal of applied physics. 1984, Vol 23, Num 1, pp 23-25, issn 0021-4922Article

A new method to melt Chevrel phase superconducting compoundsGOVINDA RAJAN, K; CHANDRA SHEKAR, N. V; VISWANATH, R. N et al.Journal of physics. D, Applied physics (Print). 1989, Vol 22, Num 8, pp 1205-1209, issn 0022-3727, 5 p.Article

A servo-controlled capacitive pressure sensor using a capped-cylinder structure microfabricated by a three-mask processPARK, Jae-Sung; GIANCHANDANI, Yogesh B.Journal of microelectromechanical systems. 2003, Vol 12, Num 2, pp 209-220, issn 1057-7157, 12 p.Article

Numerical simulation of magnetic liquid-encapsulated Czochralski growth of gallium arsenideCHAN, Y. T; GRUBIN, H. L.Journal of applied physics. 1991, Vol 70, Num 11, pp 7097-7110, issn 0021-8979Article

The effect of buoyancy on the weight gain signal in LEC crystal growthJOHANSEN, T. H.Journal of crystal growth. 1987, Vol 80, Num 2, pp 465-468, issn 0022-0248Article

Effects of liquid encapsulation on dopant segregation during Czochralski growthXING, Z.-J; KENNEDY, J. K; WITT, A. F et al.Journal of crystal growth. 1984, Vol 68, Num 3, pp 776-779, issn 0022-0248Article

Vertical magnetic field applied LEC apparatus for large diameter GaAs single crystal growthTERASHIMA, K; KATSUMATA, T; ORITO, F et al.Japanese journal of applied physics. 1984, Vol 23, Num 5, pp L302-L304, issn 0021-4922, 2Article

Optical levitation and transport of microdroplets : Proof of conceptNAGY, Peter T; NEITZEL, G. Paul.Physics of fluids (1994). 2008, Vol 20, Num 10, issn 1070-6631, 101703.1-101703.4Article

Composition dependence of lattice spacing for low dislocation density undoped liquid encapsulated Czochralski GaAs crystalsUSUDA, K; YASUAMI, S; FUJII, T et al.Journal of applied physics. 1991, Vol 69, Num 1, pp 182-184, issn 0021-8979Article

Infrared reflectance study of n-type InP grown by the LEC methodHUA, Q. H; LI, G. P; HE, X. K et al.Materials letters (General ed.). 1985, Vol 3, Num 3, pp 93-97, issn 0167-577XArticle

Room temperature transmission cathodoluminescence study of dislocations in semi-insulating GaAs single crystalsFRANZOSI, P; SALVIATI, G.Journal of crystal growth. 1983, Vol 63, Num 2, pp 419-422, issn 0022-0248Article

Analysis of the dripping-jetting transition in compound capillary jetsHERRADA, M. A; MONTANERO, J. M; FERRERA, C et al.Journal of fluid mechanics. 2010, Vol 649, pp 523-536, issn 0022-1120, 14 p.Article

Investigation of compound jet electrospray : Particle encapsulationFAN MEI; CHEN, Da-Ren.Physics of fluids (1994). 2007, Vol 19, Num 10, issn 1070-6631, 103303.1-103303.10Article

A comparative study on the growth of GaSbMORAVEC, F; TOMM, Y.Crystal research and technology (1979). 1987, Vol 22, Num 2, pp K30-K33, issn 0232-1300Article

X-Ray topographic study of twinning in InP crystals grown by the liquid encapsulated Czochralski techniqueTOHNO, S; KATSUI, A.Journal of crystal growth. 1986, Vol 74, Num 2, pp 362-374, issn 0022-0248Article

Effective segregation coefficient of carbon impurity in LEC GaAs crystalsKOBAYASHI, T; OSAKA, J.Journal of crystal growth. 1985, Vol 71, Num 1, pp 240-242, issn 0022-0248Article

The identification of precipitates in V-doped InP single crystalsCOCKAYNE, B; MACEWAN, W. R; COURTNEY, S. J et al.Journal of crystal growth. 1984, Vol 69, Num 2-3, pp 610-612, issn 0022-0248Article

A new magnetic-field applied pulling apparatus for LEC GaAs single crystal growthTERASHIMA, K; FUKUDA, T.Journal of crystal growth. 1983, Vol 63, Num 2, pp 423-425, issn 0022-0248Article

Interaction among natural convections in two immiscible liquid layers subject to a horizontal temperature gradientSOMEYA, Satoshi; MUNAKATA, Tetsuo; NISHIO, Masahiro et al.International heat transfer conference. 2002, pp 135-140, isbn 2-84299-308-X, 6 p.Conference Paper

Finite element analysis of a thermal-capillary model for liquid encapsulated Czochralski growthDERBY, J. J; BROWN, R. A; GEYLING, F. T et al.Journal of the Electrochemical Society. 1985, Vol 132, Num 2, pp 470-482, issn 0013-4651Article

Dislocation-free silicon-doped gallium arsenide grown by LEC procedureFORNARI, R; PAORICI, C; ZANOTTI, L et al.Journal of crystal growth. 1983, Vol 63, Num 2, pp 415-418, issn 0022-0248Article

Three-dimensional oscillatory thermocapillary flow in encapsulated liquid bridgeLI, You-Rong; LIU, Ying-Jie; LAN PENG et al.Physics of fluids (1994). 2006, Vol 18, Num 7, issn 1070-6631, 074108.1-074108.6Article