Asymmetric biasing for subgrid pattern adjustmentWONG, Alfred K; LIEBMANN, Lars W.SPIE proceedings series. 2001, pp 1548-1553, isbn 0-8194-4032-9, 2VolConference Paper

Extreme ultraviolet (EUV) lithography (22-25 February 2010, San Jose, California, United States)La Fontaine, Bruno M.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7636, issn 0277-786X, isbn 978-0-8194-8050-7 0-8194-8050-9, 2 vol, 2, isbn 978-0-8194-8050-7 0-8194-8050-9Conference Proceedings

DEEP UV PHOTORESISTS. I. MELDRUM'S DIAZO SENSITIZERGRANT BD; CLECAK NJ; TWIEG RJ et al.1981; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 11; PP. 1300-1305; BIBL. 19 REF.Article

Development of advanced silylation process for 157-nm lithographySATOU, Isao; WATANABE, Manabu; WATANABE, Hiroyuki et al.Microelectronic engineering. 2001, Vol 57-58, pp 571-577, issn 0167-9317Conference Paper

A three-layer resist system for deep U.V. and RIE microlithography on nonplanar surfacesBASSOUS, E; EPHRATH, L. M; PEPPER, G et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 2, pp 478-484, issn 0013-4651Article

La Microlitographie en ultraviolet profond: mise en œuvre avec un laser excimère-exciplexe = Microlithography with Deep Ultraviolet radiation, use of an excimer laser for this purposeZAHORSKI, Dorian.1983, 182 fThesis

EVAPORATED AGBR AS A POTENTIAL PHOTOSENSITIVE MATERIAL FOR THE NEW LITHOGRAPHIESLAVINE JM; MASTERS JI; GOLDBERG GM et al.1981; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 11; PP. 1311-1314; BIBL. 11 REF.Article

Advances in resist materials and processing technology XXVI (23-25 February 2009, San Jose, California, United States)Henderson, Clifford L.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7273, issn 0277-786X, isbn 978-0-8194-7526-8 0-8194-7526-2, 2 vol, 2, isbn 978-0-8194-7526-8 0-8194-7526-2Conference Proceedings

Deep UV exposure technologyBACHUR, J.Solid state technology. 1983, Vol 25, Num 2, pp 124-127, issn 0038-111XArticle

AZIDE-PHENOLIC RESIN PHOTORESISTS FOR DEEP UV LITHOGRAPHYIWAYANAGI T; KOHASHI T; NONOGAKI S et al.1981; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 11; PP. 1306-1310; BIBL. 18 REF.Article

Fabrication of hydrophobic films replicated from plant leaves in natureLEE, Seung-Mo; HYUN SUP LEE; DONG SUNG KIM et al.Surface & coatings technology. 2006, Vol 201, Num 3-4, pp 553-559, issn 0257-8972, 7 p.Article

Development of a Novel EUV Mask Protection Engineering Tool and Mask Handling TechniquesAMEMIYA, Mitsuaki; OTA, Kazuya; KAMONO, Takashi et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 66073G.1-66073G.8, issn 0277-786X, isbn 978-0-8194-6745-4Conference Paper

Impact of EUV light scatter on CD control as a result of mask density changesKRAUTSCHIK, Christof; ITO, Masaaki; NISHIYAMA, Iwao et al.SPIE proceedings series. 2002, pp 289-301, isbn 0-8194-4434-0, 2VolConference Paper

The simulation of application of high transmittance AttPSM for sub-100 nm pattern in 248 nm lithographyLIN, Cheng-Ming; LOONG, Wen-An.Microelectronic engineering. 2001, Vol 57-58, pp 41-48, issn 0167-9317Conference Paper

Problèmes posés par la conception d'un objectif photoréducteur fonctionnant en UV = Problems in UV microlithographic lens designingROBLIN, G.Journal of optics. 1984, Vol 15, pp 281-285, issn 0150-536X, 4 bisArticle

Step and Flash Imprint Lithography for Semiconductor High Volume Manufacturing?MALLOY, M; LITT, L. C.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7637, issn 0277-786X, isbn 978-0-8194-8051-4 0-8194-8051-7, 763706.1-763706.11Conference Paper

A rapid prototyping technique for the fabrication of solvent-resistant structuresHARRISON, Christopher; CABRAL, Joao T; STAFFORD, Christopher M et al.Journal of micromechanics and microengineering (Print). 2004, Vol 14, Num 1, pp 153-158, issn 0960-1317, 6 p.Article

VUV spectrophotometry for photomasks characterization at 193 nmMINGHONG YANG; LEITERER, Jork; GATTO, Alexandre et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 59651L.1-59651L.7, issn 0277-786X, isbn 0-8194-5983-6, 1VolConference Paper

Environmental data from the Engineering Test StandKLEBANOFF, L. E; GRUNOW, P. A; GRAHAM, S et al.SPIE proceedings series. 2002, pp 310-315, isbn 0-8194-4434-0, 2VolConference Paper

Naphthochinondiazid-haltige Photolacke für die Lithographie im UV-Bereich = Photoresists pour la lithographie UV contenant du diazide de naphtoquinone = Photoresists for UV-lithography containing naphtoquinone diazidPASCH, H; SCHULZE, H; LORKOWSKI, H.-J et al.Journal of information recording materials (1985). 1987, Vol 15, Num 2, pp 97-106, issn 0863-0453Article

DEEP UV1:1 PROJECTION LITHOGRAPHY UTILIZING NEGATIVE RESIST MRSMATSUZAWA T; TOMIOKA H.1981; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 11; PP. 1284-1288; BIBL. 8 REF.Article

Feasibility of UV cleaning of 157-nm reticlesDUISTENVINKEL, A. E; BASTEIN, A. T. G. M; VAN SCHAIK, W et al.Microelectronic engineering. 2003, Vol 67-68, pp 3-9, issn 0167-9317, 7 p.Conference Paper

Optics ContaminationBAJT, Sasa.EUV lithography. SPIE Press Monograph. 2009, Vol 178, pp 227-259, isbn 978-0-8194-6964-9 978-0-4704-7155-5, 1Vol, 33 p.Book Chapter

EUV Lithography for 30nm Half Pitch and Beyond: Exploring Resolution, Sensitivity and LWR TradeoffsPUTNA, E. Steve; YOUNKIN, Todd R; CHANDHOK, Manish et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7273, issn 0277-786X, isbn 978-0-8194-7526-8 0-8194-7526-2, 72731L.1-72731L.9, 2Conference Paper

Study of the simulation parameter for EUVLSEKIGUCHI, Atushi.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7273, issn 0277-786X, isbn 978-0-8194-7526-8 0-8194-7526-2, 72731G.1-72731G.11, 2Conference Paper