kw.\*:("Método VLS")
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Sawtooth faceting in silicon nanowiresROSS, F. M; TERSOFF, J; REUTER, M. C et al.Physical review letters. 2005, Vol 95, Num 14, pp 146104.1-146101.4, issn 0031-9007Article
Non faceted surfaces of Cd crystals grown from Cd-Pb droplets by the VLS methodYUMOTO, H; WATANABE, T; KISHI, K et al.Japanese journal of applied physics. 1990, Vol 29, Num 2, pp 372-376, issn 0021-4922, 1Article
Flow assisted synthesis of highly ordered silica nanowire arraysCHAOYI YAN; TAO ZHANG; POOI SEE LEE et al.Applied physics. A, Materials science & processing (Print). 2009, Vol 94, Num 4, pp 763-766, issn 0947-8396, 4 p.Article
Influence of precursor feeding rate on vapor―liquid―solid nanowire growthGUANGBI YUAN; XIAOHUA LIU; WEIDONG HE et al.Applied physics. A, Materials science & processing (Print). 2009, Vol 96, Num 2, pp 399-402, issn 0947-8396, 4 p.Article
Synthesis of epitaxial Si(100) nanowires on Si(100) substrate using vapor-liquid-solid growth in anodic aluminum oxide nanopore arraysSHIMIZU, T; SENZ, S; SHINGUBARA, S et al.Applied physics. A, Materials science & processing (Print). 2007, Vol 87, Num 4, pp 607-610, issn 0947-8396, 4 p.Article
The nucleation site selection of vapour―liquid―solid nanowiresXIAOLONG LIU; DUBROVSKII, V. G; XIAOMIN REN et al.Journal of physics. Condensed matter (Print). 2013, Vol 25, Num 21, issn 0953-8984, 215302.1-215302.7Article
Advances in the theory of III―V nanowire growth dynamicsKROGSTRUP, Peter; JØRGENSEN, Henrik I; JOHNSON, Erik et al.Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 31, issn 0022-3727, 313001.1-313001.29Article
Microstructure and crystallography of titanium nitride whiskers grown by a vapor-liquid-solid processNOLAN, T. A; ALLARD, L. F; COFFEY, D. W et al.Journal of the American Ceramic Society. 1991, Vol 74, Num 11, pp 2769-2775, issn 0002-7820Article
Vapor fluxes on the apical droplet basic solid state physics during nanowire growth by molecular beam epitaxyGLAS, Frank.Physica status solidi. B. Basic research. 2010, Vol 247, Num 2, pp 254-258, issn 0370-1972, 5 p.Article
In-situ chlorine passivation to suppress surface-dominant transport in silicon nanowire devicesKIM, Ja-Yeon; KWON, Min-Ki; LOGEESWARAN, V. J et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7768, issn 0277-786X, isbn 9780819482648, 77680R.1-77680R.5Conference Paper
Growth, morphology, and structural properties of group-III-nitride nanocolumns and nanodisksCALLEJA, E; RISTIC, J; SANCHEZ, B et al.Physica status solidi. B. Basic research. 2007, Vol 244, Num 8, pp 2816-2837, issn 0370-1972, 22 p.Article
Control of Si nanowire growth by oxygenKODAMBAKA, Suneel; HANNON, James B; TROMP, Rudolf M et al.Nano letters (Print). 2006, Vol 6, Num 6, pp 1292-1296, issn 1530-6984, 5 p.Article
Synthesis of β-Ga2O3 nanowires by an MOCVD approachKIM, H. W; KIM, N. H.Applied physics. A, Materials science & processing (Print). 2005, Vol 81, Num 4, pp 763-765, issn 0947-8396, 3 p.Article
Ultrasharp tips for field emission applications prepared by the vapor-liquid-solid growth techniqueGIVARGIZOV, E. I.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 2, pp 449-453, issn 1071-1023Conference Paper
Chemical tension and global equilibrium in VLS nanostructure growth process : from nanohillocks to nanowiresLI, N; TAN, T. Y; GOSELE, U et al.Applied physics. A, Materials science & processing (Print). 2007, Vol 86, Num 4, pp 433-440, issn 0947-8396, 8 p.Article
Theoretical analysis of the radius of semiconductor nanowires grown by the catalytic vapour-liquid-solid mechanismJOON KWON, S; PARK, Jae-Gwan.Journal of physics. Condensed matter (Print). 2006, Vol 18, Num 15, pp 3875-3885, issn 0953-8984, 11 p.Article
Analysis of silicon nanowires grown by combining SiO evaporation with the VLS mechanismKOLB, F. M; HOFMEISTER, H; SCHOLZ, R et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 7, pp G472-G475, issn 0013-4651Article
Variation in silicon whisker radius during unsteady-state growthNEBOL'SIN, V. A; SHCHETININ, A. A; NATAROVA, E. I et al.Inorganic materials. 1998, Vol 34, Num 2, pp 87-89, issn 0020-1685Article
Pecularities of silicon carbide crystal growth in quasiclosed volumeLILOV, S. K.Crystal research and technology (1979). 1993, Vol 28, Num 3, pp 299-303, issn 0232-1300Article
Growth of Si whiskers on Au/Si(1 1 1) substrate by gas source molecular beam epitaxy (MBE)LIU, J. L; CAI, S. J; JIN, G. L et al.Journal of crystal growth. 1999, Vol 200, Num 1-2, pp 106-111, issn 0022-0248Article
Modeling the nucleation statistics in vapor-liquid-solid nanowiresSIBIREV, N. V; NAZARENKO, M. V; ZEZE, D. A et al.Journal of crystal growth. 2014, Vol 401, pp 51-55, issn 0022-0248, 5 p.Conference Paper
Photovoltaic characteristics of silicon nanowire arrays synthesized by vapor-liquid-solid processCHENG YUNG KUO; CHIE GAU; BAU TONG DAI et al.Solar energy materials and solar cells. 2011, Vol 95, Num 1, pp 154-157, issn 0927-0248, 4 p.Conference Paper
Properties of a pn junction developed with a Si microprobe by vapour-liquid-solid growth using in situ dopingISLAM, M. S; KAWASHIMA, T; SAWADA, K et al.Semiconductor science and technology. 2006, Vol 21, Num 9, pp 1364-1368, issn 0268-1242, 5 p.Article
Synthesis and characterization of γ-Al2O3 nanorodsLI, W. F; MA, X. L; ZHANG, W. S et al.Physica status solidi. A. Applied research. 2006, Vol 203, Num 2, pp 294-299, issn 0031-8965, 6 p.Article
Growth of Au-catalysed Si nanowires by low pressure chemical vapour deposition on Si(100) and amorphous Si surfacesSANTONI, A; JIMENEZ VILLACORTA, F; RUFOLONI, A et al.Journal of physics. Condensed matter (Print). 2006, Vol 18, Num 48, pp 10853-10859, issn 0953-8984, 7 p.Article