CHANGES IN PHOTOVOLTAIC AND DARK ELECTRICAL PROPERTIES OF HYDROGENATED AMORPHOUS SILICON DIODES INDUCED BY FORWARD BIAS CARRIER INJECTIONSAKATA I; HAYASHI Y.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 25-26; PP. 1075-1076; BIBL. 8 REF.Article

SHORT- AND LONG-RANGE ION-BEAM MIXING IN CU:AL: INFLUENCE OF INTERFACIAL OXIDEBESENBACHER F; BOTTIGER J; NIELSEN SK et al.1982; APPLIED PHYSICS. A, SOLIDS AND SURFACES; ISSN 0721-7250; DEU; DA. 1982; VOL. 29; NO 3; PP. 141-145; BIBL. 22 REF.Article

MONTE CARLO SIMULATION OF GAAS SUBMICRON N⁺-N-N⁺ DIODE WITH GAAPAS HETEROJUNCTION CATHODETOMIZAWA K; AWANO Y; HASHIZUME N et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 25-26; PP. 1067-1069; BIBL. 7 REF.Article

T-EMITTER BIPOLAR POWER TRANSISTOR WITH NEGATIVE-TEMPERATURE-GRADIENT CURRENT GAINJANKOVIC ND.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 25-26; PP. 1085-1087; BIBL. 5 REF.Article

A SUB-HALF-MICRON GATE-LENGTH GAAS MESFET WITH NEW GATE STRUCTUREIMAI Y; UCHIDA M; YAMAMOTO K et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 4; PP. 99-101; BIBL. 4 REF.Article

ORIENTATION EFFECT OF SELF-ALIGNED SOURCE/DRAIN PLANAR GAAS SCHOTTKY BARRIER FIELD-EFFECT TRANSISTORSYOKOYAMA N; ONODERA H; OHNISHI T et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 270-271; BIBL. 5 REF.Article

EVIDENCE OF DETRIMENTAL SURFACE EFFECTS ON GAAS POWER MESFETSDUMAS JM; PAUGAM J; LE MOUELLIC C et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 25-26; PP. 1094-1095; BIBL. 9 REF.Article

DIRECT COMPARISON OF THE ELECTRON-TEMPERATURE MODEL WITH THE PARTICLE-MESH (MONTE CARLO) MODEL FOR THE GAAS MESFETCURTICE WR.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 12; PP. 1942-1943; BIBL. 7 REF.Article

HIGH-EFFICIENCY GAAS POWER MESFETS PREPARED BY ION IMPLANTATIONFENG M; KANBER H; EU VK et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 25-26; PP. 1097-1098; BIBL. 6 REF.Article

EFFECTIVE ELECTRON MOBILITY IN INVERSION-MODE AL₂O₃-INP MISFETSSHINODA Y; KOBAYASHI T.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 11; PP. 1119-1124; BIBL. 12 REF.Article

ANOMALOUS GATE-TO-DRAIN CAPACITANCE CHARACTERISTICS OF GAAS MESFETSYOKOYAMA K; TOMIZAWA M; TAKADA T et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 6; PP. 719-721; BIBL. 11 REF.Article

BROAD HAND FIXTURE CHARACTERIZES ANY PACKAGED MICROWAVE TRANSISTORLANE RQ; POLLARD RD; MAURY MA JR et al.1982; MICROWAVE J.; ISSN 0026-2897; USA; DA. 1982; VOL. 25; NO 10; PP. 95-109; 8 P.; BIBL. 3 REF.Article

THRESHOLD VOLTAGE MARGIN OF NORMALLY-OFF GAAS MESFET IN DCFL CIRCUITINO M; KURUMADA K; OHMORI M et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 6; PP. 144-146; BIBL. 4 REF.Article

ON THE SCALING OF SI-MESFETSRAM GV; ELMASRY MI.1980; IEEE ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 12; PP. 259-262; BIBL. 31 REF.Article

INTENTIONAL SIDE ETCHING TO ACHIEVE LOW-NOISE GAAS F.E.T.MURAI F; KURONO H; KODERA H et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 11; PP. 316-318; BIBL. 3 REF.Article

STATUS OF POWER TRANSISTORS. BIPOLAR AND FIELD EFFECT.PITZALIS O JR.1977; MICROWAVE J.; U.S.A.; DA. 1977; VOL. 20; NO 2; PP. 30-61 (4P.); BIBL. 11 REF.Article

EMPIRICAL MODEL FOR GALLIUM ARSENIDE MESFETSBROWN DJ.1983; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1983; VOL. 130; NO 1; PP. 29-32; BIBL. 6 REF.Article

GAAS MESFET COMPARATORS FOR GIGAHIT-RATE ANALOG-TO DIGITAL CONVERTERSUPADHYAYULA LC.1980; RCA REV.; ISSN 0033-6831; USA; DA. 1980; VOL. 41; NO 2; PP. 198-212; BIBL. 14 REF.Article

STATIC NEGATIVE RESISTANCE IN CALCULATED MESFET DRAIN CHARACTERISTICSNORTON DE; HAYES RE.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 3; PP. 570-572; BIBL. 10 REF.Article

TWO-DIMENSIONAL ELECTRON GAS M.E.S.F.E.T. STRUCTUREDELAGEBEAUDEUF D; DELESCLUSE P; ETIENNE P et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 17; PP. 667-668; BIBL. 10 REF.Article

FEMTO JOULE LOGIC CIRCUIT WITH ENHANCEMENT-TYPE SCHOTTKY-BARRIER GATE FET.MUTA H; SUZUKI S; YAMADA K et al.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 9; PP. 1023-1027; BIBL. 6 REF.Article

ESTIMATION OF GAAS STATIC RAM PERFORMANCEINO M; HIRAYAMA M; KURUMADA K et al.1982; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 7; PP. 1130-1135; BIBL. 13 REF.Article

BACKGATING AND LIGHT SENSITIVITY IN ION-IMPLANTED GAAS INTEGRATED CIRCUITSGORONKIN H; BIRRITELLA MS; SEELBACH WC et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 5; PP. 845-850; BIBL. 7 REF.Article

BIT SYNCHRONISATION IN GBIT/S RANGE USING DUAL GATE GAAS M.E.S.F.E.T.S.BENEKING H; FILENSKY W; PONSE F et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 14; PP. 543-544; BIBL. 3 REF.Article

MODELLING THE M.E.S.F.E.T. OUTPUT NONLINEARITYMINASIAN RA.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 17; PP. 515-516; BIBL. 5 REF.Article