Coordination polymers of the 3d block cations with semiconductor propertiesROSCA, I; RUSU, I; SUTIMAN, D et al.International symposium on electrets. 1999, pp 557-560, isbn 0-7803-5025-1Conference Paper

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Investigations on the morphology of silicon surfaces anisotropically etched with TMAHTHONG, J. T. L; BAI, Y; LUO, P et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 72, Num 2-3, pp 177-179, issn 0921-5107Conference Paper

SEMAT'99 : structure électronique et matériaux (Mont Sainte Odile, 12-13 octobre 1999)SEMAT'99. Réunion annuelle. 1999, 54 p.Conference Proceedings

Acoustoelectric effect in a semiconductor superlatticeMENSAH, S. Y; ALLOTEY, F. K. A; ADJEPONG, S. K et al.Journal of physics. Condensed matter (Print). 1994, Vol 6, Num 34, pp 6783-6787, issn 0953-8984Article

Transient strongly anisotropic luminescence from an optically excited semiconductorIVANOV, A. L; HAUG, H.Physica status solidi. B. Basic research. 1992, Vol 173, Num 1, pp 211-220, issn 0370-1972Conference Paper

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Thermo-acoustical parameters of some semiconductorsREDDY, R. R; RAVI KUMAR, M; RAO, T. V. R et al.Crystal research and technology (1979). 1993, Vol 28, Num 5, pp 729-735, issn 0232-1300Article

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About the mechanisms of spin-dependent recombination in semiconductorsBARABANOV, A. V; LVOV, V. A; TRETYAK, O. V et al.Physica status solidi. B. Basic research. 1998, Vol 207, Num 2, pp 419-427, issn 0370-1972Article

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Wavelet characterization of the submicron surface roughness of anisotropically etched siliconMOKTADIR, Z; SATO, K.Surface science. 2001, Vol 470, Num 1-2, pp L57-L62, issn 0039-6028Article

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