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Modélisation des Transferts de Charges sous Illumination à une Interface n-MoSe₂/(I₃^-, I^-) = Modelling of charges transfer at an interface n-MoSe₂/(I₃^-, I^-) under illuminationGUEL, Boubié; LEGMA, Jean B; TRAORE, Harouna et al.Journal de la Société ouest-africaine de chimie. 2008, Num 25, pp 1-17, issn 0796-6687, 17 p.Article

Density functional theory investigation of the electronic structure and thermoelectric properties of layered MoS₂, MoSe₂ and their mixed-layer compoundCHANGHOON LEE; JISOOK HONG; WANG RO LEE et al.Journal of solid state chemistry (Print). 2014, Vol 211, pp 113-119, issn 0022-4596, 7 p.Article

Current transport characteristics of pSe-nMoSe₂ heterojunction diodeSUMESH, C. K; PATEL, K. D; PATHAK, V. M et al.EPJ. Applied physics (Print). 2010, Vol 52, Num 3, issn 1286-0042, 30302.p1-30302.p4Article

Electrical studies on (Mo/We)Se₂ single crystals. Pt. 3:Anisotropy in resistivity = Elektrische Untersuchungen an (Mo/W)Se₂-Einkristallen. T. 3AGARWAL, M.K; PATEL, P.D; VIJAYAN, O et al.Physica status solidi. A. Applied research. 1983, Vol 79, Num 1, pp 103-108, issn 0031-8965Article

Synthesis and structural properties of Mo-Se-C sputtered coatingsPOLCAR, T; EVARISTO, M; STUEBER, M et al.Surface & coatings technology. 2008, Vol 202, Num 11, pp 2418-2422, issn 0257-8972, 5 p.Conference Paper

Temperature dependence of tribological properties of MOS₂and MoSe₂ coatingsKUBART, T; POLCAR, T; KOPECKY, L et al.Surface & coatings technology. 2005, Vol 193, Num 1-3, pp 230-233, issn 0257-8972, 4 p.Conference Paper

Thermal Expansion, Anharmonicity and Temperature-Dependent Raman Spectra of Single- and Few-Layer MoSe₂ and WSe₂LATE, Dattatray J; SHIRODKAR, Sharmila N; WAGHMARE, Umesh V et al.ChemPhysChem (Print). 2014, Vol 15, Num 8, pp 1592-1598, issn 1439-4235, 7 p.Article

Effect of precursor structure on Cu(InGa)Se₂ formation by reactive annealingPARK, Hyeonwook; SUNG CHEOL KIM; LEE, Sang-Hwan et al.Thin solid films. 2011, Vol 519, Num 21, pp 7245-7249, issn 0040-6090, 5 p.Conference Paper

Surface modification of MoSe₂ in solution using a combined technique of scanning tunneling microscopy indentation with electrochemical etchingOHMORI, T; CASTRO, R. J; CABRERA, C. R et al.Langmuir. 1998, Vol 14, Num 21, pp 6287-6290, issn 0743-7463Article

Temperature dependence anisotropic photoconductivity in 2H-MoSe₂ single crystalsLEE, Y. C; HU, S. Y; TIONG, K. K et al.Journal of alloys and compounds. 2008, Vol 448, pp 44-48, issn 0925-8388, 5 p.Article

Chemical vapor deposition of twisted bilayer and few-layer MoSe₂ over SiO_x substratesBACHMATIUK, A; ABELIN, R. F; QUANG, H. T et al.Nanotechnology (Bristol. Print). 2014, Vol 25, Num 36, issn 0957-4484, 365603.1-365603.6Article

Control of Schottky Barriers in Single Layer MoS₂ Transistors with Ferromagnetic ContactsCHEN, Jen-Ru; ODENTHAL, Patrick M; SWARTZ, Adrian G et al.Nano letters (Print). 2013, Vol 13, Num 7, pp 3106-3110, issn 1530-6984, 5 p.Article

Properties of the Mo Back Contact for the Formation of a Thin-Film Photovoltaic AbsorberWANG, S. S; HSU, C. Y; SHIOU, F. J et al.Journal of electronic materials. 2013, Vol 42, Num 1, pp 71-77, issn 0361-5235, 7 p.Article

Optical characterization and modeling of Cu(In,Ga)(Se,S)₂ solar cells with spectroscopic ellipsometry and coherent numerical simulationRICHTER, M; SCHUBBERT, C; ERAERDS, P et al.Thin solid films. 2013, Vol 535, pp 331-335, issn 0040-6090, 5 p.Conference Paper

Chemical properties of the Cu(In, Ga)Se₂/Mo/glass interfaces in thin film solar cellsWEINHARDT, L; BLUM, M; BÄR, M et al.Thin solid films. 2007, Vol 515, Num 15, pp 6119-6122, issn 0040-6090, 4 p.Conference Paper

Methanol oxidation at Pt/MoO_x/MoSe₂ thin film electrodes prepared with exfoliated MoSe₂BOLIVAR, H; IZQUIERDO, S; TREMONT, R et al.Journal of applied electrochemistry. 2003, Vol 33, Num 12, pp 1191-1198, issn 0021-891X, 8 p.Article

Microwave-assisted synthesis of nanosized MoSe₂HARPENESS, Riki; GEDANKEN, Aharon; WEISS, A. M et al.Journal of material chemistry. 2003, Vol 13, Num 10, pp 2603-2606, issn 0959-9428, 4 p.Article

Synchrotron radiation studies of transition metal selenide thin-films formation on Ti, Mo and Cu substrates : in and out diffusion of LiSALTAS, V; PAPAGEORGOPOULOS, C. A; PAPAGEORGOPOULOS, D. C et al.Thin solid films. 2001, Vol 389, Num 1-2, pp 307-314, issn 0040-6090Article

Preparation of layered semiconductor (MoSe₂) by electrosynthesisSAHAYA ANAND, T. Joseph; SANJEEVIRAJA, C; JAYACHANDRAN, M et al.Vacuum. 2001, Vol 60, Num 4, pp 431-435, issn 0042-207XConference Paper

In situ study of silver electrodeposition at MoSe₂ by electrochemical scanning tunneling microscopyOHMORI, T; CASTRO, R. J; CABRERA, C. R et al.Langmuir. 1998, Vol 14, Num 23, pp 6755-6760, issn 0743-7463Article

Characteristics of MoSe₂ formation during rapid thermal processing of Mo-coated glassLEE, Soobin; KOO, Jaseok; KIM, Sammi et al.Thin solid films. 2013, Vol 535, pp 206-213, issn 0040-6090, 8 p.Conference Paper

Large-Area Synthesis of Monolayer and Few-Layer MoSe₂ Films on SiO₂ SubstratesXIN LU; IQBAL BAKTI UTAMA, M; WU ZHOU et al.Nano letters (Print). 2014, Vol 14, Num 5, pp 2419-2425, issn 1530-6984, 7 p.Article

Thickness-dependent electrical conductivities and ohmic contacts in transition metal dichalcogenides multilayersCHEN, Ruei-San; TANG, Chih-Che; SHEN, Wei-Chu et al.Nanotechnology (Bristol. Print). 2014, Vol 25, Num 41, issn 0957-4484, 415706.1-415706.9Article

Synthesis and Electronic Properties of the Misfit Layer Compound [(PbSe)_1.00]₁[MoSe₂]₁HEIDEMAN, Colby L; ROSTEK, Raimar; ANDERSON, Michael D et al.Journal of electronic materials. 2010, Vol 39, Num 9, pp 1476-1481, issn 0361-5235, 6 p.Conference Paper