Surface bismuth removal after Bi nanoline encapsulation in siliconYAGI, Shuhei; YASHIRO, Wataru; SAKAMOTO, Kunihiro et al.Surface science. 2005, Vol 595, Num 1-3, pp L311-L317, issn 0039-6028Article

Studies on scattering of fast H and He atoms from fe films grown on Cu(001)BARON, M; BERNHARD, T; GRUYTERS, M et al.Surface science. 2006, Vol 600, Num 18, pp 3924-3927, issn 0039-6028, 4 p.Conference Paper

Growth of high quality Zn_0.9Mg_0.1O films on c-plane sapphire substrates by plasma-assisted molecular beam epitaxyZHANG, H. H; PAN, X. H; DING, P et al.Applied surface science. 2013, Vol 279, pp 212-215, issn 0169-4332, 4 p.Article

Influence of boron on the initial stages of Si molecular beam epitaxy on Si(111) studied by reflection high-energy electron diffractionFISSEL, Andreas; KRÜGENER, Jan; OSTEN, Hans Jörg et al.Surface science. 2009, Vol 603, Num 3, pp 477-481, issn 0039-6028, 5 p.Article

Effects of growth interruption during the formation of InAs/GaAs self-assembled quantum dots grown by molecular beam epitaxyIIZUKA, K; MORI, K; SUZUKI, T et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 611-613, issn 0959-8324, 3 p.Conference Paper

Controllable growth of semiconductor nanometer structuresWANG, Z. G; WU, J.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 379-382, issn 0959-8324, 4 p.Conference Paper

High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wellsKOVSH, A. R; ZHUKOV, A. E; ALFEROV, Zh. I et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 491-493, issn 0959-8324, 3 p.Conference Paper

Structural study of the InAs quantum-dot nucleation on GaAs(001)PATELLA, F; NUFRIS, S; ARCIPRETE, F et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 419-422, issn 0959-8324, 4 p.Conference Paper

Lateral p-n junctions for high-density LED arraysVACCARO, Pablo O; VOROBEV, A; DHARMARASU, N et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 355-357, issn 0959-8324, 3 p.Conference Paper

Light emission from cubic InGaN nanostructuresLISCHKA, K.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 427-433, issn 0959-8324, 7 p.Conference Paper

Molecular beam epitaxial growth of AlSb/InAsSb heterostructuresYUWEI ZHANG; YANG ZHANG; MIN GUAN et al.Applied surface science. 2014, Vol 313, pp 479-483, issn 0169-4332, 5 p.Article

Room-temperature electrical creation of spin accumulation in n-Ge using highly resistive Fe₃Si/n⁺-Ge Schottky-tunnel contactsHAMAYA, Kohei; TAKEMOTO, Gotaro; BABA, Yuzo et al.Thin solid films. 2014, Vol 557, pp 382-385, issn 0040-6090, 4 p.Conference Paper

Nanoscratch behavior of Zn_1-xCd_xSe heteroepitaxial layersTSAI, Chien-Huang.Applied surface science. 2010, Vol 256, Num 12, pp 3789-3794, issn 0169-4332, 6 p.Article

Control of the stacking fault areas in pseudomorphic ZnSe layers by photo-molecular beam epitaxyOHNO, Y; TAISHI, T; YONENAGA, I et al.Physica. B, Condensed matter. 2007, Vol 401-02, pp 650-653, issn 0921-4526, 4 p.Conference Paper

FeO(111) formation by exposure of Fe(110) to atomic and molecular oxygenBUSCH, M; GRUYTERS, M; WINTER, H et al.Surface science. 2006, Vol 600, Num 13, pp 2778-2784, issn 0039-6028, 7 p.Article

Thermal stability of epitaxial Fe films grown on Si substrates by molecular beam epitaxyYANPING WEI; CUNXU GAO; CHUNHUI DONG et al.Applied surface science. 2014, Vol 293, pp 71-75, issn 0169-4332, 5 p.Article

Scanning tunneling microscopy investigation of CoO/Fe(001) and Fe/CoO/Fe(001) layered structuresBRAMBILLA, A; PICONE, A; FINAZZI, M et al.Surface science. 2011, Vol 605, Num 1-2, pp 95-100, issn 0039-6028, 6 p.Article

Growth and structure of MBE grown TiO₂ anatase films with rutile nano-crystallitesRUI SHAO; CHONGMIN WANG; MCCREADY, David E et al.Surface science. 2007, Vol 601, Num 6, pp 1582-1589, issn 0039-6028, 8 p.Article

Mechanism for coarsening of P-mediated Ge quantum dots during in-situ annealingQIN, J; LI, F. H; WU, Y. Q et al.Surface science. 2007, Vol 601, Num 4, pp 941-944, issn 0039-6028, 4 p.Article

Initial stages of MnAs/GaAs(001) epitaxy studied by RHEED azimuthal scansBRAUN, Wolfgang; SATAPATHY, Dillip K; PLOOG, Klaus H et al.Surface science. 2006, Vol 600, Num 18, pp 3950-3955, issn 0039-6028, 6 p.Conference Paper

Effect of the nanoscratch resistance of indium nitride thin films in the etching durationHSU, Wen-Nong; SHIH, Teng-Shih.Applied surface science. 2012, Vol 261, pp 610-615, issn 0169-4332, 6 p.Article

Chlorine chemisorption on Cu(001) by surface X-ray diffraction : Geometry and substrate relaxationTOLENTINO, Hélio C. N; DE SANTIS, Maurizio; GAUTHIER, Yves et al.Surface science. 2007, Vol 601, Num 14, pp 2962-2966, issn 0039-6028, 5 p.Article

Thermal imaging of wafer temperature in MBE using a digital cameraJACKSON, A. W; GOSSARD, A. C.Journal of crystal growth. 2007, Vol 301-302, pp 105-108, issn 0022-0248, 4 p.Conference Paper

Three decades of molecular beam epitaxyFOXON, C. T.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 1-8, issn 0022-0248, 8 p.Conference Paper

Direct measurement of surface stress during Bi-mediated Ge growth on SiASAOKA, Hidehito; YAMAZAKI, Tatsuya; YAMAGUCHI, Kenji et al.Surface science. 2013, Vol 609, pp 157-160, issn 0039-6028, 4 p.Article