The photovoltages of amorphous silicon n-i-n and p-i-p structuresPICKIN, W; MUHL, S.Journal of physics. D, Applied physics (Print). 1983, Vol 16, Num 8, pp L153-L156, issn 0022-3727Article

VARIABLE SECTION OPTICAL-FIBER DELIVERY SYSTEM OF HIGH-POWER LASER RADIATION FOR SURGICAL USEBRENCI M; FALCIAI R; MAZZONI M et al.1983; APPLIED OPTICS; ISSN 0003-6935; USA; DA. 1983; VOL. 22; NO 3; PP. 373-375; BIBL. 6 REF.Article

A GENERAL PROCEDURE OF SOLVING THE LINEAR DELAY SYSTEM VIA BLOCK PULSE FUNCTIONSWEN LIANG CHEN; CHIA HSIANG MENG.1982; COMPUTERS & ELECTRICAL ENGINEERING; ISSN 0045-7906; USA; DA. 1982; VOL. 9; NO 3-4; PP. 153-166; BIBL. 5 REF.Article

INFLUENCE MUTUELLE DES PHOTOELEMENTS A LARGE BANDE ET A BANDE ETROITE LORS DU FONCTIONNEMENT DES HETEROPHOTOCONVERTISSEURS EN CASCADES GAASN-ALGAASP-ALGAAS-NALLAKHVERDIEV AM; ZADIRANOV YU M; RUMYANTSEV VD et al.1983; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1983; VOL. 17; NO 3; PP. 446-448; BIBL. 5 REF.Article

SCHOTTKY DIODES WITH HIGH BREAKDOWN VOLTAGESWILAMOWSKI BM.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 5; PP. 491-493; BIBL. 8 REF.Article

NOISE IN NEAR-BALLISTIC N⁺NN⁺ AND N⁺PN⁺ GALLIUM ARSENIDE SUBMICRON DIODESSCHMIDT RR; BOSMAN G; VAN VLIET CM et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 5; PP. 437-444; BIBL. 24 REF.Article

EXTINCTION PAR LE CHAMP DE LA CONDUCTIVITE SUPERFICIELLE ET CONDUCTIVITE PAR SAUTS BIDIMENSIONNELLE DANS INAS PTIMCHENKO IN; SMIRNOVA NN; STUS NM et al.1983; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1983; VOL. 17; NO 3; PP. 422-425; BIBL. 10 REF.Article

HETEROSTRUCTURES DU SYSTEME AL-GA-AS A LOCALISATION DES REGIONS DE PASSAGE DU COURANTALFEROV ZH I; ANDREEV VM; EGOROV BV et al.1977; ZH. TEKH. FIZ.; S.S.S.R.; DA. 1977; VOL. 47; NO 8; PP. 1782-1790; BIBL. 14 REF.Article

Stability and terrestrial application of a-Si tandem type solar cellsHIROE, A; YAMAGISHI, H; NISHIO, H et al.Photovoltaic specialists conference. 19. 1987, pp 1111-1116Conference Paper

Comments of effect of magnetic field on n⁼NN⁺ GaAs ballastic diodë. ReplyVAN ZEGHBROECK, B. J; TIWARI, S. C.Electronics Letters. 1985, Vol 21, Num 19, pp 848-849, issn 0013-5194Article

Transport balistique et quasi balistique dans les structures de semiconducteurs. RevueRYZHIJ, V. I; BANNOV, N. A; FEDIRKO, V. A et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 5, pp 769-786, issn 0015-3222Article

Effect of temperature on the rectification behaviour of Al/Al₂O₃/InTe/Bi sandwich structuresROUSINA, R; SHIVAKUMAR, G. K.Crystal research and technology (1979). 1988, Vol 23, Num 9, pp K137-K138, issn 0232-1300Article

A method for determining the conversion efficiency of multiple-cell photovoltaic devicesGLATFELTER, T; BURDICK, J.Photovoltaic specialists conference. 19. 1987, pp 1187-1193Conference Paper

Enhanced blue response fo top a-Si:H solar cells for tandem structuresKUSIAN, W; KRÜHLER, W; BULLEMER, B et al.Photovoltaic specialists conference. 19. 1987, pp 599-603Conference Paper

High efficiency a-Si: H two-stacked tandem solar cellsYOSHIDA, T; MARUYAMA, K; NABETA, O et al.Photovoltaic specialists conference. 19. 1987, pp 1095-1100Conference Paper

High efficiency thin film tandem PV modulesMITCHELL, K; POTTER, R; ERMER, J et al.Photovoltaic specialists conference. 19. 1987, pp 13-18Conference Paper

Voltage-matched configurations for multijunction solar cellsGEE, J. M.Photovoltaic specialists conference. 19. 1987, pp 536-541Conference Paper

Breakdown in concentration profile diodesGHATOL, A. A; SUNDARSINGH, V. P.International journal of electronics. 1983, Vol 55, Num 4, pp 639-646, issn 0020-7217Article

Exact linear admittance of n⁺-n-n⁺ semiconductor structuresERANEN, S; SINKKONEN, J.Physical review. B, Condensed matter. 1985, Vol 32, Num 8, pp 5447-5448, issn 0163-1829Article

Variation of Switching time of silicon p-n-p-n structures irradiated by fast electronsKORSHUNOV, F. P; MARCENKO, I. G; TROSHCHINSKII, V. T et al.Physica status solidi. A. Applied research. 1985, Vol 89, Num 2, pp K227-K230, issn 0031-8965Article

Modulation of the n-channel conductivity in liquid phase epitaxially grown p-n-p doped GaAs submicron structuresZWICKNAGL, P.Journal of applied physics. 1984, Vol 55, Num 6, pp 1513-1519, issn 0021-8979Article

CARACTERISTIQUES PHOTOELECTRIQUES DES STRUCTURES P-PI -NU -N A BASE DE GAAS(FE)VILISOV AA; GAMAN VI; DIAMANT VM et al.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 4; PP. 625-628; BIBL. 8 REF.Article

MISE EN EVIDENCE D'UNE INSTABILITE DE L'EFFET PHOTOELECTRIQUE DANS DES STRUCTURES MULTIJONCTIONS MATRICIELLES BASEES SUR DU SILICIUMAGAEV YA; BAZAROV BA; ZADDEH VV et al.1978; IZVEST. AKAD. NAUK TURKM. S.S.R., FIZ.-TEKH. KHIM. GEOL. NAUK; SUN; DA. 1978; NO 2; PP. 19-23; ABS. ENG; BIBL. 7 REF.Article

SUR LE COEFFICIENT DE VERROUILLAGE D'UNE STRUCTURE P-N-P-NPALKO EH V; UVAROV AI.1978; RADIOTEKH. I ELEKTRON.; SUN; DA. 1978; VOL. 28; NO 11; PP. 2391-2395; BIBL. 9 REF.Article

RELAXATION OF THE EXCESS CONDUCTIVITY IN MULTILAYER STRUCTURES WITH P-N JUNCTIONS.AGAREV VN; STAFEYEV VI.1977; RADIO ENGNG ELECTRON. PHYS.; U.S.A.; DA. 1977; VOL. 22; NO 1; PP. 121-127; BIBL. 5 REF.Article