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TaN metal gate MOSFETs with aggressively scaled HfO₂ gate dielectricsLANDER, R. J. P; SCHRAM, T; KUBICEK, S et al.Proceedings - Electrochemical Society. 2003, pp 367-373, issn 0161-6374, isbn 1-56677-396-2, 7 p.Conference Paper

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A leakage-tolerant dynamic register file using leakage bypass with stack forcing (LBSF) and source follower NMOS (SFN) techniquesTANG, Stephen; HSU, Steven; YE, Yibin et al.2002 symposium on VLSI circuits. 2002, pp 320-321, isbn 0-7803-7310-3, 2 p.Conference Paper

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Cascading transmission gates to enhance multiplier performanceSHIVELY, R. R; ROBINSON, W. V. JR; ORTON, D. E et al.IEEE transactions on computers. 1984, Vol 33, Num 7, pp 677-679, issn 0018-9340Article

Delay analysis of Si NMOS Gbit/s logic circuitsBAYRUNS, R. J; JOHNSTON, R. L; FRASER, D. L. JR et al.IEEE journal of solid-state circuits. 1984, Vol 19, Num 5, pp 755-764, issn 0018-9200Article

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