Magnesium adsorption and incorporation in InN (0 0 01 ) and (0001) surfaces: A first-principles studyBELABBES, A; KIOSEOGLOU, J; KOMNINOU, Ph et al.Applied surface science. 2009, Vol 255, Num 20, pp 8475-8482, issn 0169-4332, 8 p.Article

Chemical vapor deposition growth of InN nanostructures: Morphology regulation and field emission propertiesFAN ZHANG; QIANG WU; YONGLIANG ZHANG et al.Applied surface science. 2012, Vol 258, Num 24, pp 9701-9705, issn 0169-4332, 5 p.Article

Ferromagnetism and spin polarization in indium nitride, indium oxynitride, and Cr substituted indium oxynitride filmsTHAPA, P; LAWES, G; NADGORNY, B et al.Applied surface science. 2014, Vol 295, pp 189-193, issn 0169-4332, 5 p.Article

Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layersSKURIDIN, D; DINH, D. V; PRISTOVSEK, M et al.Applied surface science. 2014, Vol 307, pp 461-467, issn 0169-4332, 7 p.Article

High temperature growth of InN on various substrates by plasma-assisted pulsed laser depositionSTOKKER-CHEREGI, F; NEDELCEA, A; FILIPESCU, M et al.Applied surface science. 2011, Vol 257, Num 12, pp 5312-5314, issn 0169-4332, 3 p.Conference Paper

Improved performance of SPR optical fiber sensors with InN as dielectric coverESTEBAN, O; NARANJO, F. B; DIAZ-HERRERA, N et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7753, issn 0277-786X, isbn 978-0-8194-8246-4, 77530X.1-77530X.4, 2Conference Paper

Ultrafast hot carrier dynamics in InN epitaxial filmsTSAI, Tsong-Ru; CHANG, Chih-Fu; KUO, Chih-Wei et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7937, issn 0277-786X, isbn 978-0-8194-8474-1, 793710.1-793710.8Conference Paper

Weak Localization in Indium Nitride FilmsYU, X. Z; JIANG, Z. Z; YANG, Y et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 69840D.1-69840D.4, issn 0277-786X, isbn 978-0-8194-7182-6, 1VolConference Paper

Electronic transport properties in aluminum indium nitride nanorods grown by magnetron sputter epitaxyCHEN, Ruei-San; TANG, Chih-Che; CHING-LIEN, Hsiao et al.Applied surface science. 2013, Vol 285, pp 625-628, issn 0169-4332, 4 p., bArticle

Magnetoresistance in a nominally undoped InGaN thin filmDING, K; ZENG, Y. P; LI, Y. Y et al.Applied physics. A, Materials science & processing (Print). 2010, Vol 99, Num 1, pp 63-66, issn 0947-8396, 4 p.Article

Photoluminescence in InAsN epilayers grown by molecular beam epitaxyZHUANG, Q; GODENIR, A; KRIER, A et al.Journal of physics. D, Applied physics (Print). 2008, Vol 41, Num 13, issn 0022-3727, 132002.1-132002.4Article

The high sensitivity of InN under rare earth ion implantation at medium range energyLACROIX, B; CHAUVAT, M. P; RUTERANA, P et al.Journal of physics. D, Applied physics (Print). 2011, Vol 44, Num 29, issn 0022-3727, 295402.1-295402.6Article

Terahertz characterization of semiconductor alloy AIInN: negative imaginary conductivity and its meaning: reply to commentKANG, Ting-Ting; YAMAMOTO, Masatomo; TANAKA, Mikiyasu et al.Optics letters. 2010, Vol 35, Num 2, issn 0146-9592, p. 266Article

Plasmonic effects and optical properties of InN composites with In nanoparticlesSHUBINA, T. V.Physica status solidi. A, Applications and materials science (Print). 2010, Vol 207, Num 5, pp 1054-1061, issn 1862-6300, 8 p.Conference Paper

Effect of macroscopic polarization on thermal conductivity of InNSAHOO, B. K.Journal of alloys and compounds. 2014, Vol 605, pp 217-221, issn 0925-8388, 5 p.Article

Effect of the nanoscratch resistance of indium nitride thin films in the etching durationHSU, Wen-Nong; SHIH, Teng-Shih.Applied surface science. 2012, Vol 261, pp 610-615, issn 0169-4332, 6 p.Article

Photoexcited carrier relaxation dynamics of InN films and nanocolumnsHASHIMOTO, M; FUKUNAGA, K; KUNUGITA, H et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7937, issn 0277-786X, isbn 978-0-8194-8474-1, 793712.1-793712.6Conference Paper

Terahertz emission from Mg-doped a-plane InNAHN, H; YEH, Y.-J; GWO, S et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7945, issn 0277-786X, isbn 978-0-8194-8482-6, 79450Z.1-79450Z.7Conference Paper

Discussion on electrical characteristics of i-In_0.13Ga_0.87N p-i-n photovoltaics by using a single/multi-antireflection layerHAN CHENG LEE; YAN KUIN SU; WEN KUEI CHUANG et al.Solar energy materials and solar cells. 2010, Vol 94, Num 7, pp 1259-1262, issn 0927-0248, 4 p.Article

Terahertz characterization of semiconductor alloy AIInN: negative imaginary conductivity and its meaning: commentSCHNEIDER, Arno.Optics letters. 2010, Vol 35, Num 2, issn 0146-9592, p. 265Article

Desorption of hydrogen from InN(0001) observed by HREELSBHATTA, R. P; THOMS, B. D; ALEVLI, M et al.Surface science. 2008, Vol 602, Num 7, pp 1428-1432, issn 0039-6028, 5 p.Article

Band structure and effective mass of InN under pressureGORCZYCA, I; DMOWSKI, L; PLESIEWICZ, J et al.Physica status solidi. B. Basic research. 2008, Vol 245, Num 5, pp 887-889, issn 0370-1972, 3 p.Conference Paper

75 nm T-shaped gate for In_0.17Al_0.83N/GaN HEMTs with minimal short-channel effectGEUM, D. M; SHIN, S. H; KIM, M. S et al.Electronics letters. 2013, Vol 49, Num 24, pp 1536-1537, issn 0013-5194, 2 p.Article

Catalyst-free growth of InN nanorods by metal-organic chemical vapor deposition : Indium Nitride and Related AlloysMIN HWA KIM; DAE YOUNG MOON; PARK, Jinsub et al.Physica status solidi. A, Applications and materials science (Print). 2012, Vol 209, Num 1, pp 50-55, issn 1862-6300, 6 p.Article

InN doped with Zn: Bulk and surface investigation from first principlesJIANLI WANG; GANG TANG; WU, X. S et al.Solid state communications. 2012, Vol 152, Num 13, pp 1168-1171, issn 0038-1098, 4 p.Article