Influence des niveaux profonds et des phénomènes de surface sur les caractéristiques électriques de photodiodes GaInAs = Influence of deep levels and surface phenomena on the electrical properties of GaInAs photodiodesDucroquet, Frédérique; Nouailhat, Alain.1989, 125 p.Thesis

Defect reactions on the phosphorus sublattice in low-temperature electron-irradiated InPSIBILLE, A; SUSKI, J.Physical review. B, Condensed matter. 1985, Vol 31, Num 8, pp 5551-5553, issn 0163-1829Article

Process-induced defect states in GaAsP light emitting diodesHENNING, I. D; THOMAS, H.Physica status solidi. A. Applied research. 1983, Vol 79, Num 2, pp 567-574, issn 0031-8965Article

ENERGY LEVELS OF SOME RARE-EARTH RELATED IMPURETIES IN GERMANIUMPEARTON SJ.1982; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1982; VOL. 109; NO 2; PP. K135-K138; BIBL. 8 REF.Article

Etude de défauts profonds introduits par traitement thermique et dopage en ions de transition dans InP = Deep level defects introduced by thermal treatment and doping by transition ions in PnPROJO-ROMEO, Pedro.1984, 197 pThesis

Deep levels associated with impurities at the bond-centered interstitial site in SiJOHNSON, W. L; SANKEY, O. F; DOW, J. D et al.Physical review. B, Condensed matter. 1984, Vol 30, Num 4, pp 2070-2073, issn 0163-1829Article

Optimal basis sets for deep levels. II: Defect-molecule approximationKANE, E. O.Physical review. B, Condensed matter. 1985, Vol 32, Num 4, pp 2260-2265, issn 0163-1829Article

New temperature fluctuation method for direct determination of thermal activation energy of deep levels in semiconductorsKUMAR, V; INDUSEKHAR, H.Electronics Letters. 1983, Vol 19, Num 7, pp 271-272, issn 0013-5194Article

Utilisation des structures à base de silicium de type M-S-M (Métal-Semiconducteur-Métal) dans la méthode de spectroscopie transitoire des niveaux profondsEREMIN, V. K; IVANOV, A. M; STROKAN, N. B et al.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 9, pp 1613-1617, issn 0015-3222Article

The determination of deep level concentrations in high resistivity semiconductors by DLTS, with special reference to germaniumSIMOEN, E; CLAUWS, P; VENNIK, J et al.Journal of physics. D, Applied physics (Print). 1985, Vol 18, Num 10, pp 2041-2058, issn 0022-3727Article

Defect states in p-type silicon crystals induced by plastic deformationONO, H; SUMINO, K.Journal of applied physics. 1985, Vol 57, Num 2, pp 287-292, issn 0021-8979Article

Deep levels in vapor epitaxial indium phosphide grown in the presence of ammoniaSUN, S. W; WESSELS, B. W.Journal of applied physics. 1985, Vol 57, Num 10, pp 4616-4618, issn 0021-8979Article

DLTS determination of the Mo acceptor level in Mo-GaAs_0.6P_0.4 Schottky diodesLOU, J. C; LIN, M. S; WAN, C. P et al.Japanese journal of applied physics. 1983, Vol 22, Num 6, pp 336-337, issn 0021-4922Article

FIELD DRIFT AND HYDROGENATION OF DEEP LEVEL DEFECTS ASSOCIATED WITH 1-MEV ION-IMPLANTED OXYGEN IN GERMANIUM DIODESTAVENDALE AJ; PEARTON SJ.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 6; PP. 3213-3215; BIBL. 36 REF.Article

ABSOLUTE ENERGY OF THE NITROGEN-RELATED ELECTRON TRAP IN GALLIUM PHOSPHIDEZDANSKY K; KRATENA L; MATYAS M JR et al.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 75; NO 1; PP. 335-339; ABS. RUS; BIBL. 15 REF.Article

DEEP LEVEL STUDIES OF HG_1-XCD_XTE. II: CORRELATION WITH PHOTODIODE PERFORMANCEPOLLA DL; REINE MB; JONES CE et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 8; PP. 5132-5138; BIBL. 15 REF.Article

Determination of the ionization energy of deep levels from DLTS dataVYVENKO, O. F; BAZLOV, N. V; TSELISHCHEV, S. L et al.Soviet physics. Semiconductors. 1990, Vol 24, Num 12, pp 1369-1371, issn 0038-5700, 3 p.Article

Capacitance and conductance deep level transient spectroscopy in field-effect transistorHAWKINS, I. D; PEAKER, A. R.Applied physics letters. 1986, Vol 48, Num 3, pp 227-229, issn 0003-6951Article

Etude des défauts électroniquement actifs dans le silicium recuit par faisceaux d'électrons pulsés = Electronically active defects in Si annealed by pulsed electrons beamsDOGHMANE, Mohammed-Salah.1984, 102 fThesis

STUDY OF THE DEEP LEVELS IN A PROTON-BOMBARDED GALLIUM ARSENIDEATANASSOV R; ASANO T; FURUKAVA S et al.1981; BULG. J. PHYS.; ISSN 0323-9217; BGR; DA. 1981; VOL. 8; NO 6; PP. 611-614; ABS. RUS; BIBL. 12 REF.Article

Configurationally bistable C center in quenched Si:B: possibility of a boron-vacancy pairCHANTRE, A.Physical review. B, Condensed matter. 1985, Vol 32, Num 6, pp 3687-3694, issn 0163-1829Article

OBSERVATION OF DEEP LEVELS ASSOCIATED WITH THE GAAS/AL_XGA_1-XAS INTERFACE GROWN BY MOLECULAR BEAM EPITAXYMCAFEE SR; LANG DV; TSANG WT et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 6; PP. 520-522; BIBL. 13 REF.Article

Method for measuring deep levels in thin silicon-on-insulator layer without any interface effectsKANG, H. S; AHN, C. G; KANG, B. K et al.Journal of the Electrochemical Society. 1998, Vol 145, Num 10, pp 3581-3585, issn 0013-4651Article

Deep level transient Fourier spectroscopy (DLTFS). A technique for the analysis of deep level propertiesWEISS, S; KASSING, R.Solid-state electronics. 1988, Vol 31, Num 12, pp 1733-1742, issn 0038-1101Article

CHARACTERIZATION OF ELECTRON TRAPS IN ION-IMPLANTED GAAS MESFET'S ON UNDOPED AND CR-DOPED LEC SEMI-INSULATING SUBSTRATESSRIRAM S; DAS MB.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 6; PP. 586-592; BIBL. 21 REF.Article