INFOS 2003 Proceedings of the 13th Biennial Conference on Insulating Films on Semiconductors: June 18-20, 2003, Barcelona, SpainMORANTE LLEONART, Joan-RamÓn.Microelectronic engineering. 2004, Vol 72, Num 1-4, issn 0167-9317, 463 p.Conference Proceedings

Structure of the breakdown spot during progressive breakdown of ultra-thin gate oxidesPALUMBO, F; LOMBARDO, S; PEY, K. L et al.IEEE international reliability physics symposium. 2004, pp 583-584, isbn 0-7803-8315-X, 1Vol, 2 p.Conference Paper

Oxides in electronics, dedicated to Cyril HogarthRAY, Asim.Journal of materials science. Materials in electronics. 2006, Vol 17, Num 9, issn 0957-4522, 133 p.Serial Issue

Detection of Nucleic Acid Hybridization via Oxide-Gated Carbon Nanotube Field-Effect TransistorsASCHENBACH, Konrad H; PANDANA, Herman; LEE, Jookyung et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 6959, pp 69590W.1-69590W.17, issn 0277-786X, isbn 978-0-8194-7150-5 0-8194-7150-XConference Paper

Correlation Between the V_th Adjustment of nMOSFETs With HfSiO Gate Oxide and the Energy Profile of the Bulk Trap DensitySAHHAF, S; DEGRAEVE, R; SRIVIDYA, V et al.IEEE electron device letters. 2010, Vol 31, Num 4, pp 272-274, issn 0741-3106, 3 p.Article

Improvements in both thermal stability of Ni-silicide and electrical reliability of gate oxides using a stacked polysilicon gate structureJAM WEM LEE; LIN, Shen-Xiang; LEI, Tan-Fu et al.Journal of the Electrochemical Society. 2001, Vol 148, Num 9, pp G530-G533, issn 0013-4651Article

Symmetrical 45nm PMOS on (110) substrate with excellent S/D extension distribution and mobility enhancementHWANG, J. R; HO, J. H; LIN, H. S et al.Symposium on VLSI Technology. sd, pp 90-91, isbn 0-7803-8289-7, 1Vol, 2 p.Conference Paper

New concept of high-k integration in MOSFET's by a deposition through contact holesHARRISON, S; CORONEL, P; WACQUANT, F et al.Microelectronic engineering. 2004, Vol 72, Num 1-4, pp 321-325, issn 0167-9317, 5 p.Conference Paper

Improvement in breakdown field strength of thin thermally grown SiO₂ by selective anodic oxidationPAILY, Roy; DASGUPTA, Amitava; DASGUPTA, Nandita et al.SPIE proceedings series. 2002, pp 690-694, isbn 0-8194-4500-2, 2VolConference Paper

Enhancement-mode n-channel GaN MOSFETs fabricated on p-GaN using HfO₂ as gate oxideSUGIURA, S; KISHIMOTO, S; MIZUTANI, T et al.Electronics Letters. 2007, Vol 43, Num 17, pp 952-953, issn 0013-5194, 2 p.Article

Active pixel sensors : the sensor of choice for future space applicationsLEIJTENS, Johan; THEUWISSEN, Albert; RAO, Padmakumar R et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 67440V.1-67440V.8, issn 0277-786X, isbn 978-0-8194-6902-1Conference Paper

Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxidesPOMPL, T; KERBER, A; RÖHNER, M et al.Microelectronics and reliability. 2006, Vol 46, Num 9-11, pp 1603-1607, issn 0026-2714, 5 p.Conference Paper

Multiple gate oxide technology using nitrogen implantation and high-pressure O₂ oxidationLEE, C. H; KWONG, D. L.Semiconductor science and technology. 2003, Vol 18, Num 2, pp 88-91, issn 0268-1242, 4 p.Article

A compact DC model of gate oxide short defectBOUCHAKOUR, R; PORTAL, J. M; GALLIERE, J. M et al.Microelectronic engineering. 2004, Vol 72, Num 1-4, pp 140-148, issn 0167-9317, 9 p.Conference Paper

A reliable and high voltage compatible CMOS I/O bufferCHOW, Hwang-Cherng; CHEN, You-Gang.MWSCAS : Midwest symposium on circuits and systems. 2004, isbn 0-7803-8346-X, 3Vol, Vol III, 451-454Conference Paper

Pulsed laser deposition of TiO₂ for MOS gate dielectricPAILY, Roy; DASGUPTA, Amitava; DASGUPTA, Nandita et al.Applied surface science. 2002, Vol 187, Num 3-4, pp 297-304, issn 0169-4332Article

MOSFET current drive optimization using silicon nitride capping layer for 65-nm technology nodePIDIN, S; MORI, T; NAKAMURA, R et al.Symposium on VLSI Technology. sd, pp 54-55, isbn 0-7803-8289-7, 1Vol, 2 p.Conference Paper

Acceleration factors and mechanistic study of progressive breakdown in small area ultra-thin gate oxidesSUEHLE, J. S; ZHU, B; CHEN, Y et al.IEEE international reliability physics symposium. 2004, pp 95-101, isbn 0-7803-8315-X, 1Vol, 7 p.Conference Paper

Gate fault isolation and parametric characterization through the use of atomic force probingERICKSON, A. N.IEEE international reliability physics symposium. 2004, pp 617-618, isbn 0-7803-8315-X, 1Vol, 2 p.Conference Paper

Relevance of remote scattering in gate to channel mobility of thin-oxide CMOS devicesSOLOMON, Paul M; MIN YANG.International Electron Devices Meeting. 2004, pp 143-146, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Nanometer-scale analysis of current limited stresses impact on SiO₂ gate oxide reliability using C-AFMPORTI, M; NAFRIA, M; AYMERICH, X et al.SPIE proceedings series. 2003, pp 466-473, isbn 0-8194-4978-4, 8 p.Conference Paper

Effects of wave function penetration on modeling of deep sub-micron p-MOSFETSKAUSER, M. Z; HAQUE, A.SPIE proceedings series. 2002, pp 677-680, isbn 0-8194-4500-2, 2VolConference Paper

Characterization and reliability study of Al₂O₃ as an alternative gate dielectric for ULSI technologyROHIT KUMAR GUPTA; KATIYAR, Monica; OJHA, P. K et al.SPIE proceedings series. 2002, pp 659-663, isbn 0-8194-4500-2, 2VolConference Paper

Issues, achievements and challenges towards integration of high-k dielectricsCAYMAX, M; DE GENDT, S; LUJAN, G et al.International journal of high speed electronics and systems. 2002, Vol 12, Num 2, pp 295-304, 10 p.Conference Paper

The effect of hafnium or zirconium contamination on MOS processesVERMEIRE, B; DELBRIDGE, K; PANDIT, V et al.ASMC proceedings. 2002, pp 299-303, issn 1078-8743, isbn 0-7803-7158-5, 5 p.Conference Paper