FLUORIDE ION CONTAMINATION AND TIO FILM MIGRATION IN THE TI-PT-AU METALLIZATION.CHRISTOU A; DAY HM.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 12; PP. 1710-1713; BIBL. 10 REF.Article

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ETUDE DES CREUX DES FIGURES DE CORROSION AUX DISLOCATIONS DE NH₄CLO₄ DOPE AU CUIVRETOMAS DM; VIL'YAMS DO; BODDYREV VV et al.1975; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1975; VOL. 11; NO 6; PP. 1035-1037; BIBL. 9 REF.Article

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DISLOCATION ETCHING OF CAWO₄ CRYSTALS.PATEL AR; ARORA SK.1974; J. PHYS. D; G.B.; DA. 1974; VOL. 7; NO 11; PP. 1485-1488; H.T. 3; BIBL. 9 REF.Article

ROLE OF THE DISTRIBUTED IMPURITIES IN THE ETCHING OF POTASSIUM CHLORIDE CRYSTALS.LAKSHMIPATHI RAO M; HARI BABU V; VENKATA RAMIAH K et al.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 22; NO 2; PP. 149-152; BIBL. 6 REF.Article

VERSETZUNGSNACHWEISS AUF (100)-FLAECHEN VON GAAS-EINKRISTALLEN. = MISE EN EVIDENCE DE DISLOCATIONS SUR LES SURFACES (100) DE MONOCRISTAUX GAASRICHTER H; SCHULZ M.1974; KRISTALL U. TECH.; DTSCH.; DA. 1974; VOL. 9; NO 9; PP. 1041-1050; ABS. ANGL.; BIBL. 17 REF.Article

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DISLOCATION SUB-STRUCTURE IN ALPHA -TI SINGLE CRYSTALS.AKHTAR A; TEGHTSOONIAN E.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 28; NO 2; PP. 227-230; BIBL. 3 REF.Article

ETCH HILLOCKS ON SELENIUM.VAISHAMPAYAN NV.1975; CURR. SCI.; INDIA; DA. 1975; VOL. 44; NO 16; PP. 581; BIBL. 2 REF.Article

THE GROWTH AND PERFECTION OF PHENANTHRENE SINGLE CRYSTALS. II. DISLOCATION ETCHING AND PLASTIC DEFORMATION.NARANG RS; SHAH BS; SHERWOOD JN et al.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 22; NO 3; PP. 201-209; BIBL. 26 REF.Article

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OXIDATION STACKING FAULTS IN EPITAXIAL SILICON CRYSTALS.CONTI M; CORDA G; MATTEUCCI R et al.1975; J. MATER. SCI.; G.B.; DA. 1975; VOL. 10; NO 4; PP. 705-713; BIBL. 27 REF.Article

THERMAL ETCH PITS ON SINGLE CRYSTALS OF SILVER CHLORIDE. I. LACK OF CORRESPONDENCE WITH DISLOCATIONS.SARAN D; PARASNIS AS.1975; INDIAN J. PURE APPL. PHYS.; INDIA; DA. 1975; VOL. 13; NO 11; PP. 725-730; BIBL. 22 REF.Article

DIE ANWENDUNG DES QUANTIMET ZUR ATZGRUBENDICHTEBESTIMMUNG AN SILIZIUM-EINKRISTALLEN = UTILISATION DU QUANTIMET POUR DETERMINER LA DENSITE DES PIQURES D'ATTAQUES DE MONOCRISTAUX DE SIHILDEBRAND H; SCHUBERT R.1972; KRISTALL U. TECH.; DTSCH.; DA. 1972; VOL. 7; NO 10; PP. 1143-1151; ABS. ANGL.; BIBL. 6 REF.Serial Issue

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ELIMINATION OF OXIDATION-INDUCED STACKING FAULTS BY PREOXIDATION GETTERING OF SILICON WAFERS. I. PHOSPHORUS DIFFUSION-INDUCED MISFIT DISLOCATIONS.ROZGONYI GA; PETROFF PM; READ MH et al.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 12; PP. 1725-1729; BIBL. 25 REF.Article