Forty years of Moore's Law : ever smaller transistors and ever larger wafersDAN HUTCHESON, G.Proceedings - Electrochemical Society. 2006, pp 3-9, issn 0161-6374, isbn 1-56677-439-X, 1Vol, 7 p.Conference Paper

An experimental study of megasonic cleaning of silicon wafersBUSNAINA, A. A; KASHKOUSH, I. I; GALE, G. W et al.Journal of the Electrochemical Society. 1995, Vol 142, Num 8, pp 2812-2817, issn 0013-4651Article

Silicon direct bonding for sensor applications : characterization of the bond qualityHARENDT, C; HÖFFLINGER, B; GRAF, H.-G et al.Sensors and actuators. A, Physical. 1991, Vol 25, Num 1-3, pp 87-92Article

A fracture criterion for gallium arsenide wafersBELSINGER, H. E; WILNER, B; TASCH, U et al.Engineering fracture mechanics. 1994, Vol 48, Num 2, pp 199-205, issn 0013-7944, 6 p.Article

Novel extra-accurate method for two-sides alignment on silicon wafersTATIC-LUCIC, S; YU-CHONG TAI.Sensors and actuators. A, Physical. 1994, Vol 42, Num 1-3, pp 573-577, issn 0924-4247Conference Paper

A product design problem in semiconductor manufacturingAVRAM, F; WEIN, L. M.Operations research. 1992, Vol 40, Num 5, pp 986-998, issn 0030-364XArticle

E-Beam direct wafer writing process using a water-soluble conductive layerWATANABE, H; TODOKORO, Y.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 3, pp 474-478, issn 0018-9383, 5 p.Article

High-efficiency single-water sputter etching deviceWELLERDIECK, K.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1987, Vol 5, Num 5, pp 2957-2958, issn 0734-2101Article

Wafer cooling in ion implantationMACK, M. E.Microelectronics. 1985, Vol 16, Num 2, pp 5-17, issn 0026-2692Article

CD Uniformity improvement for Double-Patterning Lithography (Litho-Litho-Etch) Using Freezing ProcessSUGIMACHI, Hisanori; KOSUGI, Hitoshi; YAMAGUCHI, Yoshikazu et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7273, issn 0277-786X, isbn 978-0-8194-7526-8 0-8194-7526-2, 72731D.1-72731D.7, 2Conference Paper

Impact of Patterning Strategy on Mask Fabrication Beyond 32nmMIMOTOGI, Shoji; HIGAKI, Tomotaka; TAKAHATA, Kazuhiro et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7028, pp 702814.1-702814.9, issn 0277-786X, isbn 978-0-8194-7243-4 0-8194-7243-3, 2Conference Paper

Mask specification for wafer process optimizationLIN CHEN; FREIBERGER, Phil; FAMSWORTH, Jeff et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 634917.1-634917.11, issn 0277-786X, isbn 0-8194-6444-9, 2VolConference Paper

Latest development in chip scale package laser marking and micro laser markingBO GU.IEEE/CPMT/SEMI international electronics manufacturing technology. Symposium. 2004, pp 144-146, isbn 0-7803-8582-9, 1Vol, 3 p.Conference Paper

Wafer fab cycle time forecast under changing loading situationsBEEG, Thomas.IEEE / SEMI advanced semiconductor manufacturing conference. 2004, pp 339-343, isbn 0-7803-8312-5, 1Vol, 5 p.Conference Paper

Bonding of silicon wafers for silicon-on-insulatorMASZARA, W. P; GOETZ, G; CAVIGLIA, A et al.Journal of applied physics. 1988, Vol 64, Num 10, pp 4943-4950, issn 0021-8979Article

Cleaning of a rough rigid surface: removal of a dissolved contaminant by convection-enhanced diffusion and chemical reactionRADHAKRISHNA CHILUKURI; MIDDLEMAN, S.Journal of the Electrochemical Society. 1984, Vol 131, Num 5, pp 1169-1173, issn 0013-4651Article

Development of a Novel Methodology for Effective Partial die Inspection and MonitoringLEE, Byoung-Ho; LEE, Tae-Yong; CROSS, Andrew et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7272, issn 0277-786X, isbn 978-0-8194-7525-1 0-8194-7525-4, 72723K.1-72723K.6, 2Conference Paper

The challenge to record correct fast WLR monitoring data from productive wafers and to set reasonable limitsMARTIN, Andreas; FAZEKAS, Josef; PIETSCH, Andreas et al.IEEE international reliability physics symposium. 2004, pp 661-662, isbn 0-7803-8315-X, 1Vol, 2 p.Conference Paper

The challenge of ultra thin chip assemblyFEIL, Michael; ADLER, Cliff; HEMMETZBERGER, Dieter et al.Proceedings - Electronic Components Conference. 2004, issn 0569-5503, isbn 0-7803-8365-6, 2Vol, Vol 1, 35-40Conference Paper

Front end compatible wafer level CSP-technology for FR- and HT-applicationsBURGER, Klaus.SPIE proceedings series. 2003, pp 714-718, isbn 0-8194-5189-4, 5 p.Conference Paper

VLSI reliability challenges : from device physics to wafer scale systemsTAKEDA, E; IKUZAKI, K; KATTO, H et al.Proceedings of the IEEE. 1993, Vol 81, Num 5, pp 653-674, issn 0018-9219Article

A test methodology for wafer scale systemsLANDIS, D. L.IEEE transactions on computer-aided design of integrated circuits and systems. 1992, Vol 11, Num 1, pp 76-82, issn 0278-0070Article

Experimental study of NH₃-O₂ oxidation of si watersYEN-CHUAN TSENG; SHONO, K.Japanese journal of applied physics. 1991, Vol 30, Num 2A, pp L222-L223, issn 0021-4922, 2Article

A simple pre-exposure treatment to improve post-develop photoresist step coverageNAGASWAMI, V; CARLSON, R.Journal of the Electrochemical Society. 1984, Vol 131, Num 6, pp 1369-1372, issn 0013-4651Article

Inspectability of PSM masks for the 32nm node using STARlight2+HUANG, Chain-Ting; CHENG, Yung-Feng; KUO, Shih-Ming et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7028, pp 70282P.1-70282P.8, issn 0277-786X, isbn 978-0-8194-7243-4 0-8194-7243-3, 2Conference Paper