Dispersive and nondispersive transport in amorphous semiconductors in presence of bias illuminationZELDOV, E; WEISER, K.Physical review letters. 1984, Vol 53, Num 10, pp 1012-1015, issn 0031-9007Article

Negative photoconductivity in selenium single crystalsISAEV, A. I; GUSEINOV, T. M; MEKHTIEVA, S. D et al.Physica status solidi. A. Applied research. 1984, Vol 82, Num 1, pp K87-K90, issn 0031-8965Article

Decay kinetics of persistent photoconductivity in semiconductorsQUEISSER, H. J; THEODOROU, D. E.Physical review. B, Condensed matter. 1986, Vol 33, Num 6, pp 4027-4033, issn 0163-1829Article

Hydrogenated amorphous boron: transient and steady photoconductivitySCHAFFER, J. P; PARK, H; LIND, J. H et al.Physica status solidi. A. Applied research. 1984, Vol 81, Num 1, pp K51-K55, issn 0031-8965Article

PHOTOCONDUCTIVITE NEGATIVE ET EXTINCTION DU PHOTOCOURANT DANS INSE N LORS DE L'EXCITATION PAR IMPURETESABDINOV A SH; KYAZYM ZADE AG.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 1; PP. 81-84; BIBL. 13 REF.Article

Photoconductivity decay kinetics in silver bromide photographic filmsDERI, R. J; SPOONHOWER, J. P; HAMILTON, J. F et al.Journal of applied physics. 1985, Vol 57, Num 6, pp 1968-1970, issn 0021-8979Article

Photoconductance transient response in polycrystalline siliconPOON, E; HWANG, W; YANG, E. S et al.Journal of applied physics. 1985, Vol 57, Num 2, pp 338-344, issn 0021-8979Article

ETUDE DE LA PHOTOCONDUCTIVITE DU SILICIUM DOPE AU FERABDUGAFUROVA MA; LEBEDEV AA; MAMADALIMOV AT et al.1974; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1974; VOL. 8; NO 11; PP. 2170-2173; BIBL. 11 REF.Article

NEGATIVE PHOTOCONDUCTANCE IN THIN INDIUM ANTIMONIDE FILMS.DEMEY G; DE MOLDER M; BURVENICH X et al.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 17; NO 10; PP. 1201-1203; BIBL. 29 REF.Article

AMPLIFICATION PAR LE CHAMP ET THERMIQUE DE LA PHOTOCONDUCTIVITE NEGATIVE DANS LE GERMANIUM COMPENSE PAR L'ORKLIMKA L; BUMELENE S; KAL'VENAS S et al.1975; LITOV. FIZ. SBOR.; S.S.S.R.; DA. 1975; VOL. 15; NO 4; PP. 595-604; ABS. LITU. ANGL.; BIBL. 19 REF.Article

PHOTOCONDUCTIVITE ANORMALEKORSUNSKIJ MI.1972; MOSKVA; NAUKA; DA. 1972; PP. 1-192; BIBL. 3 P.; ED. PAR L.A. RUSAKOV (SOVREM. PROBL. FIZ.)Book

Spin-dependent negative photoconductivity in siliconBAGRAEV, N. T; MASHKOV, V. A; POLOSKIN, D. S et al.Solid state communications. 1985, Vol 55, Num 9, pp 791-793, issn 0038-1098Article

The decay rate of transient photocurrents in semiconductorsHALPERN, V.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1985, Vol 52, Num 4, pp L75-L79, issn 0141-8637Article

PROPRIETES PHOTOELECTRIQUES DES MONOCRISTAUX DE IN₂TE₃ANAN'INA DB; BAKUMENKO VL; GRUSHKA GG et al.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 1; PP. 6-9; BIBL. 8 REF.Article

VARIATION SPECTRALE DE LA PHOTOCONDUCTIVITE NEGATIVEALEKSANYAN AG.1974; KVANT. ELEKTRON.; S.S.S.R.; DA. 1974; VOL. 1; NO 8; PP. 1693-1699; BIBL. 18 REF.Article

ENHANCED PHOTOCURRENT IN ANTHRACENE CRYSTALS AT 77^OK.CORET A; FORT A.1974; SOLID STATE COMMUNIC.; G.B.; DA. 1974; VOL. 15; NO 2; PP. 145-147; ABS. FR.; BIBL. 10 REF.Article

MECANISME DE LA PHOTOCONDUCTIVITE NEGATIVE DE ZNORUVINSKIJ MA.1978; UKRAIN. FIZ. ZH.; UKR; DA. 1978; VOL. 23; NO 12; PP. 2000-2002; ABS. ENG; BIBL. 16 REF.Article

PROPRIETES PHOTOELECTRIQUES DU TELLURURE DE CADMIUM DOPE PAR LE GERMANIUMNIKONYUK ES; PARFENYUK OA; MATLAK VV et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 7; PP. 1271-1278; BIBL. 18 REF.Article

TRANSIENT PHOTOCURRENT IN DIELECTRICS.RUDENKO AI.1977; INTERNATION. J. ELECTRON.; G.B.; DA. 1977; VOL. 42; NO 1; PP. 1-16; BIBL. 11 REF.Article

TRANSIENT PHOTOCURRENTS IN PYRENE-TCNE SINGLE CRYSTALS. I. CURRENTS CONTROLLED BY SURFACE LAYERS. = PHOTOCOURANTS TRANSITOIRES DANS DES MONOCRISTAUX DE PYRENE-TCNE. I. COURANTS CONTROLES PAR DES COUCHES DE SURFACEKAINO H.1975; J. PHYS. SOC. JAP.; JAP.; DA. 1975; VOL. 39; NO 3; PP. 708-714; BIBL. 5 REF.Article

NATURE DE LA PHOTOCONDUCTIVITE DITE "ANORMALE"BAZAKUTSA VA; MOKHOV GD.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 4; PP. 680-684; BIBL. 16 REF.Article

EFFET DES TRANSITIONS OPTIQUES DOUBLES SUR LE SPECTRE DE PHOTOCONDUCTIVITE EXTRINSEQUE DANS LES SEMICONDUCTEURS COMPENSESLEBEDEV AA.1973; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1973; VOL. 7; NO 3; PP. 531-537; BIBL. 12 REF.Serial Issue

DIE FELDSTAERKEBEDINGUNGEN FUER DIE MESSUNG DER TRAEGERLEBENSDAUER IN HALBLEITERKRISTALLEN NACH DER LICHTBLITZMETHODE = LES CONDITIONS DE L'I DU CHAMP POUR LA MESURE DE LA DUREE DE VIE DES PORTEURS DANS LES CRISTAUX SEMICONDUCTEURS PAR LA METHODE DES ECLAIRS LUMINEUXBENDA H; DANNHAUSER F; SPENKE E et al.1972; SIEMENS FORSCH.-U. ENTWICKL.-BER.; DTSCH.; DA. 1972; VOL. 1; NO 3; PP. 255-262; ABS. ANGL.; BIBL. 13 REF.Serial Issue

RECOMBINATION PROCESSES IN AMORPHOUS SELENIUM.VIGER C; VAUTIER C.1974; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1974; VOL. 13; NO 3; PP. 363-371; BIBL. 16 REF.Article

EXTINCTION THERMIQUE DE LA PHOTOCONDUCTIVITE ET DE LA PHOTOLUMINESCENCE DANS LES SEMICONDUCTEURS A LARGES BANDESLYUBCHENKO AV; SHEJNKMAN MK.1973; UKRAIN. FIZ. ZH.; S.S.S.R.; DA. 1973; VOL. 18; NO 2; PP. 291-299; ABS. ANGL.; BIBL. 21 REF.Serial Issue