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Results 1 to 25 of 8095

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Depth profiling of NbxO/W multilayers: effect of primary ion beam species (O2+, Ar+ and Cs+)HE, A; XU, S; FOROUGHI-ABARI, A et al.Surface and interface analysis. 2012, Vol 44, Num 8, pp 934-937, issn 0142-2421, 4 p.Conference Paper

Depth profiling and secondary ion mass spectrometry relative sensitivity factors and systematics for polymers/organicsWILSON, R. G; LUX, G. E; KIRSCHBAUM, C. L et al.Journal of applied physics. 1993, Vol 73, Num 5, pp 2524-2529, issn 0021-8979Article

Nature of noise in SIMS depth profiling dataMAKAROV, V. V.Surface and interface analysis. 1999, Vol 27, Num 9, pp 801-804, issn 0142-2421Article

Scattering by randomly rough dielectric surfaces and rough dielectric films : influence of the height distribution : Electromagnetic opticsCALVO-PEREZ, O; GREFFET, J. J; SENTENAC, A et al.Journal of optics. A, Pure and applied optics (Print). 1999, Vol 1, Num 4, pp 560-565, issn 1464-4258Conference Paper

Hadrons and other secondaries generated by cosmic-ray muons undergroundKHALCHUKOV, F. F; KOROLKOVA, E. V; KUDRYAVTSEV, V. A et al.Nuovo cimento della società italiana di fisica. C. 1995, Vol 18, Num 5, pp 517-529, issn 0390-5551Article

Investigation of pulsation characteristics of magnetic field at various depths within the relaxation zoneROMANOV, V. A; ROMANOV, D. V.Astronomičeskij žurnal. 1993, Vol 70, Num 4, pp 887-894, issn 0004-6299Article

Approaching the limits of high resolution depth profilingHOFMANN, S.Applied surface science. 1993, Vol 70-71, Num 1-4, pp 9-19, issn 0169-4332, AConference Paper

Deuterium depth profile quantification in a ASDEX Upgrade divertor tile using secondary ion mass spectrometryGHEZZI, F; CANIELLO, R; GIUBERTONI, D et al.Applied surface science. 2014, Vol 315, pp 459-466, issn 0169-4332, 8 p.Conference Paper

Phosphorous degassing from poly silicon under thermal exposure : A ToF-SIMS depth profile investigationALBERICI, S. G; PIAGGE, R.Applied surface science. 2006, Vol 252, Num 19, pp 7272-7274, issn 0169-4332, 3 p.Conference Paper

TOF-SIMS depth profiling study of corrosion propagation in coated hollow spheresORINAKOVA, Renata; ORINAK, Andrej; ARLINGHAUS, Heinrich F et al.Surface and interface analysis. 2006, Vol 38, Num 4, pp 833-837, issn 0142-2421, 5 p.Conference Paper

Calculation of crater profiles on a flat cathode in a direct current glow dischargeBOGAERTS, A; GIJBELS, R.Spectrochimica acta. Part B : Atomic spectroscopy. 1997, Vol 52, Num 6, pp 765-777, issn 0584-8547Article

Advanced in Auger microanalysis for semiconductor technologyPAMLER, W.Surface and interface analysis. 1994, Vol 22, Num 1-12, pp 331-337, issn 0142-2421Conference Paper

Origin of differences between MCs+ and MCs+2 SIMS depth profilesMIYAMOTO, Takashi; NUMAO, Shigenori; HASEGAWA, Takahiro et al.Surface and interface analysis. 2013, Vol 45, Num 1, pp 101-102, issn 0142-2421, 2 p.Conference Paper

Glow discharge spectroscopy for depth profile analysis : from micrometer to sub-nanometer layersPISONERO, Jorge.Analytical and bioanalytical chemistry. 2006, Vol 384, Num 1, pp 47-49, 3 p.Article

Comparison of urban and rural particulate air pollution characteristics obtained by SIMS and SSMSKONARSKI, P; HAŁUSZKA, J; CWIL, M et al.Applied surface science. 2006, Vol 252, Num 19, pp 7010-7013, issn 0169-4332, 4 p.Conference Paper

An investigation of the distribution of minor components in complex polymeric paint formulations using ToF-SIMS depth profilingHINDER, Steven J; WATTS, John F; SIMMONS, Garnett C et al.Surface and interface analysis. 2008, Vol 40, Num 3-4, pp 436-440, issn 0142-2421, 5 p.Conference Paper

Latest developments for the CAMECA ULE-SIMS instruments: IMS Wf and SC-UltraDE CHAMBOST, E; MERKULOV, A; PERES, P et al.Applied surface science. 2004, Vol 231-32, pp 949-953, issn 0169-4332, 5 p.Conference Paper

Availability of layered certified reference materials for industrial application of glow discharge spectrometric depth profilingWINCHESTER, M; BECK, U.Surface and interface analysis. 1999, Vol 27, Num 10, pp 930-935, issn 0142-2421Article

Shave-off depth profiling : Depth profiling with an absolute depth scaleNOJIMA, M; MAEKAWA, A; YAMAMOTO, T et al.Applied surface science. 2006, Vol 252, Num 19, pp 7293-7296, issn 0169-4332, 4 p.Conference Paper

Cesium redeposition artifacts during low energy ToF-SIMS depth profilingVITCHEV, R. G; BRISON, J; HOUSSIAU, L et al.Applied surface science. 2009, Vol 255, Num 17, pp 7586-7589, issn 0169-4332, 4 p.Article

Combined AES and TOF-SIMS analysis of a thermally treated Ag/Ti/Al metallization systemSCHEITHAUER, U; TREICHLER, R.Surface and interface analysis. 2006, Vol 38, Num 4, pp 296-299, issn 0142-2421, 4 p.Conference Paper

Applications of SIMS to cultural heritage studiesADRIAENS, A; DOWSETT, M. G.Applied surface science. 2006, Vol 252, Num 19, pp 7096-7101, issn 0169-4332, 6 p.Conference Paper

Depth profiling of emerging materials for semiconductor devicesRONSHEIM, P. A.Applied surface science. 2006, Vol 252, Num 19, pp 7201-7204, issn 0169-4332, 4 p.Conference Paper

Analysis of electrically non-conducting sample structures with electron and mass spectroscopic methodsOECHSNER, H.Thin solid films. 1999, Vol 341, Num 1-2, pp 105-108, issn 0040-6090Conference Paper

Tunneling probes for metrological applications using a long-range profilometerLIU, X; SMITH, S. T; CHETWYND, D. G et al.Review of scientific instruments. 1993, Vol 64, Num 11, pp 3161-3168, issn 0034-6748Article

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