VERBESSERUNG DER GROSSSIGNALBANDBREITE BEIM A109. = AMELIORATION DE LA LARGEUR DE BANDE EN REGIME DE FORT SIGNAL DANS LE CAS DE L'AMPLIFICATEUR OPERATIONNEL A109SOMMER K.1975; RADIO FERNSEHEN ELEKTRON.; DTSCH.; DA. 1975; VOL. 24; NO 16; PP. 535-537; BIBL. 5 REF.Article

CARACTERISTIQUES IMPULSIONNELLES ET PARAMETRES DU TRANSISTOR UTILISE DANS DES DISPOSITIFS A FORTS NIVEAUX DES SIGNAUXSMIRNOV GV.1973; IZVEST. VYSSH. UCHEBN. ZAVED., PRIBOROSTR.; S.S.S.R.; DA. 1973; VOL. 16; NO 1; PP. 97-100; BIBL. 4 REF.Serial Issue

GROSSSIGNAL-SCHALTVERHALTEN VON BIPOLARTRANSISTOREN BEI KLEINEN VERSORGUNGSSPANNUNGEN (UEBER-SPEICHER-EFFEKT) = COMPORTEMENT DE TRANSISTORS BIPOLAIRES EN COMMUTATION ET EN REGIME DE SIGNAUX FORTS AUX FAIBLES TENSIONS D'ALIMENTATION (EFFET DE RETENTION EXCESSIVE DE CHARGES)FILENSKY W; BENEKING H.1981; AEUE, ARCH. ELEKTRON. UEBERTRAGUNGSTECH.; ISSN 0001-1096; DEU; DA. 1981; VOL. 35; NO 10; PP. 397-402; ABS. ENG; BIBL. 8 REF.Article

LARGE SIGNAL ANALYSIS OF FREQUENCY MULTIPLICATION USING NON-LINEAR CAPACITANCEMAHAPATRA S; PILLAI NS.1972; INTERNATION. J. ELECTRON.; G.B.; DA. 1972; VOL. 33; NO 4; PP. 413-425; BIBL. 5 REF.Serial Issue

LARGE-SIGNAL EQUIVALENT CIRCUIT OF A GUNN ELEMENT = CIRCUIT EQUIVALENT A UN LARGE SIGNAL D'UN ELEMENT GUNNMULLER RR.1972; NACHR.-TECH.Z.; DTSCH.; DA. 1972; VOL. 25; NO 8; PP. 383-384; BIBL. 7 REF.Serial Issue

BARITT-DIODE LARGE-SIGNAL PERFORMANCE.STEWART JAC.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 10; PP. 193-194; BIBL. 5 REF.Article

A CURRENT-EXCITED LARGE-SIGNAL ANALYSIS OF IMPATT DEVICES AND ITS CIRCUIT IMPLICATIONSMADHU SUDAN GUPTA; LOMAX RJ.1973; I.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 4; PP. 395-399; BIBL. 9 REF.Serial Issue

A SIMPLE METHOD FOR DETERMINING STATIC PARAMETERS OF LARGE SIGNAL SEMICONDUCTOR DIODE AND TRANSISTOR MODELSZANIOLO C; MCNAMEE LP.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 12; PP. 1295-1302; BIBL. 13 REF.Serial Issue

LARGE-SIGNAL RESISTANCE OF IMPATT DIODES OBTAINED FROM RF-POWER TO DC-CURRENT CHARACTERISTICS.DETLEFSEN J; SCHUCK WD.1974; NACHR.-TECH. Z.; DTSCH.; DA. 1974; VOL. 27; NO 7; PP. 280-282; ABS. ALLEM.; BIBL. 9 REF.Article

RADIAL AND AXIAL RF CURRENT AND VELOCITY DISTRIBUTIONS IN LARGE-SIGNAL VELOCITY-MODULATED ELECTRON BEAMSGILMOUR AS JR.1972; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1972; VOL. 19; NO 7; PP. 886-890; BIBL. 5 REF.Serial Issue

UNIFIED LARGE-SIGNAL STABILITY AND NOISE THEORY FOR SYNCHRONISED OSCILLATORSKNOCHEL R.1981; IEE PROC., PART H; ISSN 0143-7097; GBR; DA. 1981; VOL. 128; NO 3; PP. 137-145; BIBL. 24 REF.Article

FLOATING SWITCH WITH LARGE-SIGNAL CAPABILITYHAMED A; SUTCLIFFE H.1973; ELECTRON. LETTERS; G.B.; DA. 1973; VOL. 9; NO 4; PP. 79-80; BIBL. 5 REF.Serial Issue

Comparison of theoretical and experimental results for millimeter-wave GaAs IMPATTsMAINS, R. K; EL-GABALY, M. A; HADDAD, G. I et al.I.E.E.E. transactions on electron devices. 1984, Vol 31, Num 9, pp 1273-1279, issn 0018-9383Article

Comments on A compact physical large-signal model for high-speed bipolar transistors at high current densities. I: One-dimensional model. ReplyLIOU, J. J; REIN, H.-M; SCHRÖTER, M et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 11, pp 1995-1997, issn 0018-9383Article

LARGE-SIGNAL COMPUTER SIMULATION OF IMPATT DIODESSCANLAN SO; BRAZIL TJ.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 1; PP. 12-21; BIBL. 34 REF.Article

A RELIABLE FIFTEEN-PERCENT-EFFICIENCY SILICON DOUBLE-DRIFT-REGION IMPATT DIODE.LEKHOLM A; SELLBERG E; WEISSGLAS P et al.1975; PROC. I.E.E.E.; U.S.A.; DA. 1975; VOL. 63; NO 8; PP. 1613-1615; BIBL. 5 REF.Article

A COMPARISON OF SILICON AND GALLIUM ARSENIDE LARGE SIGNAL IMPATT DIODE BEHAVIOUR BETWEEN 10 AND 100 GHZGRIERSON JR; O'HARA S.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 6; PP. 719-741; BIBL. 28 REF.Serial Issue

BESTIMMUNG DER GROSSIGNALADMITTANZ VON IMPATT-DIODEN AUS VERSTAERKERMESSUNGEN. = DETERMINATION DE L'ADMITTANCE POUR SIGNAL FORT DES DIODES IMPATT A PARTIR DE MESURES D'AMPLIFICATIONKREMER R.1975; NACHR.-TECH. Z.; DTSCH.; DA. 1975; VOL. 28; NO 9; PP. 292-299; ABS. ANGL.; BIBL. 11 REF.Article

STABILITY OF INJECTION-LOCKED OSCILLATORSKUROKAWA K.1972; PROC. I.E.E.E.; U.S.A.; DA. 1972; VOL. 60; NO 7; PP. 907-908Serial Issue

LARGE SIGNAL CIRCUIT MODEL FOR LED'S USED IN OPTICAL COMMUNICATIONDESCOMBES A; GUGGENBUEHL W.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 4; PP. 395-404; BIBL. 27 REF.Article

HARMONIC ANALYSIS OF TRANSISTOR CURRENTS WITH THE INDUCTANCES OF THE LEADS TAKEN INTO CONSIDERATION.BRUYEVICH AN.1977; RADIO ENGNG ELECTRON. PHYS.; U.S.A.; DA. 1977; VOL. 22; NO 1; PP. 73-81; BIBL. 9 REF.Article

IMPROVING THE LARGE-SIGNAL MODELS OF BIPOLAR TRANSISTORS BY DIVIDING THE INTRINSIC BASE INTO TWO LATERAL SECTIONS.REIN HM.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 2; PP. 40-41; BIBL. 5 REF.Article

LARGE SIGNAL CIRCUIT CHARACTERIZATION OF SOLID-STATE MICROWAVE OSCILLATOR DEVICES.HOWES MJ; JEREMY ML.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 8; PP. 488-499; BIBL. 26 REF.Article

A BIPOLAR DEVICE MODELING TECHNIQUE APPLICABLE TO COMPUTER-AIDED CIRCUIT ANALYSIS AND DESIGNFOSSUM JG.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 6; PP. 582-593; BIBL. 19 REF.Serial Issue

ELECTRON BUNCHING AND OUTPUT GAP INTERACTION IN BROADBAND KLYSTRONSMIHRAN TG; BRANCH GM JR; GRIFFIN GJ JR et al.1972; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1972; VOL. 19; NO 9; PP. 1011-1017; BIBL. 19 REF.Serial Issue