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STT-RAM Cell Optimization Considering MTJ and CMOS VariationsYAOJUN ZHANG; XIAOBIN WANG; HAI LI et al.IEEE transactions on magnetics. 2011, Vol 47, Num 10, pp 2962-2965, issn 0018-9464, 4 p.Conference Paper

All-Magnetic, Nonvolatile, Addressable Chainlink MemoryBROMBERG, David M; MORRIS, Daniel H; PILEGGI, Larry et al.IEEE transactions on magnetics. 2013, Vol 49, Num 7, pp 4394-4397, issn 0018-9464, 4 p.Conference Paper

Multibit cells schemes for toggle MRAM applicationsKOCHAN JU; ALLEGRANZA, Oletta.IEEE transactions on magnetics. 2006, Vol 42, Num 10, pp 2730-2732, issn 0018-9464, 3 p.Conference Paper

A parallel algorithm for approximate regularityBOXER, Laurence; MILLER, Russ.Information processing letters. 2001, Vol 80, Num 6, pp 311-316, issn 0020-0190Article

Fast Switching in Magnetic Tunnel Junctions With Two Pinned Layers: Micromagnetic ModelingMAKAROV, Alexander; SVERDLOV, Viktor; OSINTSEV, Dmitry et al.IEEE transactions on magnetics. 2012, Vol 48, Num 4, pp 1289-1292, issn 0018-9464, 4 p.Conference Paper

Advances and Future Prospects of Spin-Transfer Torque Random Access MemoryCHEN, E; APALKOV, D; WOLF, S. A et al.IEEE transactions on magnetics. 2010, Vol 46, Num 6, pp 1873-1878, issn 0018-9464, 6 p.Conference Paper

A 4-Mb toggle MRAM based on a novel bit and switching methodENGEL, B. N; AKERMAN, J; SLAUGHTER, J. M et al.IEEE transactions on magnetics. 2005, Vol 41, Num 1, pp 132-136, issn 0018-9464, 5 p., 1Article

Radiation Hardened MRAM-Based FPGAGONCALVES, O; PRENAT, G; DIENY, B et al.IEEE transactions on magnetics. 2013, Vol 49, Num 7, pp 4355-4358, issn 0018-9464, 4 p.Conference Paper

Oppositely biased multibit cells for toggle magnetic random access memoryJU, Kochan; ALLEGRANZA, Oletta.IEEE transactions on magnetics. 2007, Vol 43, Num 6, pp 2340-2342, issn 0018-9464, 3 p.Conference Paper

A Fully Functional 64 Mb DDR3 ST-MRAM Built on 90 nm CMOS TechnologyRIZZO, N. D; HOUSSAMEDDINE, D; CHIA, H.-J et al.IEEE transactions on magnetics. 2013, Vol 49, Num 7, pp 4441-4446, issn 0018-9464, 6 p.Conference Paper

Current Switching in MgO-Based Magnetic Tunneling JunctionsWENZHONG ZHU; HAI LI; YIRAN CHEN et al.IEEE transactions on magnetics. 2011, Vol 47, Num 1, pp 156-160, issn 0018-9464, 5 p., 2Article

Nano Spiral Inductors for Low-Power Digital Spintronic CircuitsKULKARNI, Jaydeep P; AUGUSTINE, Charles; JUNG, Byunghoo et al.IEEE transactions on magnetics. 2010, Vol 46, Num 6, pp 1898-1901, issn 0018-9464, 4 p.Conference Paper

Observation of Stress Assisted Magnetization Reversal in a Spin Valve StructureJIMBO, Kazuya; SAITO, Naoya; NAKAGAWA, Shigeki et al.IEEE transactions on magnetics. 2010, Vol 46, Num 6, pp 1649-1651, issn 0018-9464, 3 p.Conference Paper

Characterization of an AlOx Tunneling Barrier in a Magnetic Tunnel Junction by a Surface Plasmon Resonance Spectroscopy TechniqueKI WOONG KIM; JA HYUN KOO; IL JAE SHIN et al.IEEE transactions on magnetics. 2009, Vol 45, Num 1, pp 60-63, issn 0018-9464, 4 p., 1Article

Scalability Prospect of Three-Terminal Magnetic Domain-Wall Motion DeviceFUKAMI, Shunsuke; ISHIWATA, Nobuyuki; KASAI, Naoki et al.IEEE transactions on magnetics. 2012, Vol 48, Num 7, pp 2152-2157, issn 0018-9464, 6 p.Article

A Study of Write Margin of Spin Torque Transfer Magnetic Random Access Memory TechnologyTAI MIN; QIANG CHEN; POKANG WANG et al.IEEE transactions on magnetics. 2010, Vol 46, Num 6, pp 2322-2327, issn 0018-9464, 6 p.Conference Paper

Resonant Switching of Two Dipole-Coupled NanomagnetsCHEREPOV, S. S; KORENIVSKI, V; WORLEDGE, D. C et al.IEEE transactions on magnetics. 2010, Vol 46, Num 6, pp 2112-2115, issn 0018-9464, 4 p.Conference Paper

A 0.6V 205MHz 19.5ns tRC 16Mb embedded DRAMHARDEE, K; JONES, F; TANIGUCHI, K et al.IEEE International Solid-State Circuits Conference. 2004, pp 200-201, isbn 0-7803-8267-6, 2Vol, 2 p.Conference Paper

A 1.6Gb/s/pin double-data-rale SDRAM with wave-pipelined CAS latency controlLEE, Sang-Bo; JANG, Seong-Jin; HEO, Hyoung-Jo et al.IEEE International Solid-State Circuits Conference. 2004, pp 210-211, isbn 0-7803-8267-6, 2Vol, 2 p.Conference Paper

Spin Torque Random Access Memory Down to 22 nm TechnologyXIAOBIN WANG; YIRAN CHEN; HAI LI et al.IEEE transactions on magnetics. 2008, Vol 44, Num 11, pp 2479-2482, issn 0018-9464, 4 p., 1Conference Paper

LLG simulation of MRAM switching trajectoriesVISSCHER, P. B; SHUXIA WANG.IEEE transactions on magnetics. 2006, Vol 42, Num 10, pp 3198-3200, issn 0018-9464, 3 p.Conference Paper

1.8-V nanospeed R/W module for 64-kB cross-point cell magnetic random access memoryLI, Simon C; LEE, Jia-Mou; SU, J. P et al.IEEE transactions on magnetics. 2005, Vol 41, Num 2, pp 909-911, issn 0018-9464, 3 p.Conference Paper

An experimental 256Mb non-volatile DRAM with cell plate boosted programming techniqueAHN, J-H; HONG, S-H; CHOI, J-H et al.IEEE International Solid-State Circuits Conference. 2004, pp 42-43, isbn 0-7803-8267-6, 2Vol, 2 p.Conference Paper

A 500MHz multi-banked compilable DRAM macro with direct write and programmable pipeliningBARTH, J; ANAND, D; DREIBELBIS, J et al.IEEE International Solid-State Circuits Conference. 2004, pp 204-205, isbn 0-7803-8267-6, 2Vol, 2 p.Conference Paper

Reduction of writing field distribution in a magnetic random access memory with toggle switchingFUKAMI, Shunsuke; HONJO, Hiroaki; SUZUKI, Tetsuhiro et al.IEEE transactions on magnetics. 2007, Vol 43, Num 8, pp 3512-3516, issn 0018-9464, 5 p.Article

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