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Results 1 to 25 of 2284

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Rapid thermal annealing of ITO filmsSHUMEI SONG; TIANLIN YANG; JINGJING LIU et al.Applied surface science. 2011, Vol 257, Num 16, pp 7061-7064, issn 0169-4332, 4 p.Article

Elimination of small-sized Ag nanoparticles via rapid thermal annealing for high efficiency light trapping structureYIMING BAI; ZHENG GAO; NUOFU CHEN et al.Applied surface science. 2014, Vol 315, pp 1-7, issn 0169-4332, 7 p.Article

Controlling surface shallow junction depth by a rapid thermal annealing process with low ambient pressureHUANG, Yi-Jen; LIU, Chun-Chu; LO, Kuang-Yao et al.Applied surface science. 2011, Vol 257, Num 7, pp 2494-2497, issn 0169-4332, 4 p.Article

Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structureHENG, C. L; TEO, L. W; HO, Vincent et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 218-223, issn 0167-9317, 6 p.Conference Paper

Oxygen-deficient indium tin oxide thin films annealed by atmospheric pressure plasma jets with/without air-quenchingLIAO, Wei-Yang; HAOMING CHANG; YANG, Yao-Jhen et al.Applied surface science. 2014, Vol 292, pp 213-218, issn 0169-4332, 6 p.Article

Effect of rapid thermal annealing on the compositional ratio and interface of Cu(In,Ga)Se2 solar cells by XPSCHEN, D. S; YANG, J; XU, F et al.Applied surface science. 2013, Vol 264, pp 459-463, issn 0169-4332, 5 p.Article

Rapid thermal annealing effects on the microstructure and the thermoelectric properties of electrodeposited Bi2Te3 filmMOHAMMAD MAMUNUR RASHID; KYUNG HO CHO; CHUNG, Gwiy-Sang et al.Applied surface science. 2013, Vol 279, pp 23-30, issn 0169-4332, 8 p.Article

Effects of rapid thermal annealing on the structural and electrical properties of Na-doped ZnMgO filmsYA XUE; HAIPING HE; YIZHENG JIN et al.Applied surface science. 2011, Vol 257, Num 14, pp 5927-5930, issn 0169-4332, 4 p.Article

Nanostructured plasma etched, magnetron sputtered nanolaminar Cr2AlC MAX phase thin filmsGRIESELER, Rolf; HÄHNLEIN, Bernd; STUBENRAUCH, Mike et al.Applied surface science. 2014, Vol 292, pp 997-1001, issn 0169-4332, 5 p.Article

Study of nickel silicide formation on Si(110) substrateXIAO GUO; HAO YU; JIANG, Yu-Long et al.Applied surface science. 2011, Vol 257, Num 24, pp 10571-10575, issn 0169-4332, 5 p.Article

Control of substrate surface temperature in millisecond annealing technique using thermal plasma jetOKADA, T; HIGASHI, S; KAKU, H et al.Thin solid films. 2007, Vol 515, Num 12, pp 4897-4900, issn 0040-6090, 4 p.Conference Paper

Vacuum rapid thermal annealing of quartz resonatorsLAZAROVA, V; YORDANOV, Ts; SPASSOV, L et al.Vacuum. 2002, Vol 69, Num 1-3, pp 379-383, issn 0042-207X, 5 p.Conference Paper

Rapid thermal annealing of GaAs in a graphite susceptor―comparison with proximity annealingPEARTON, S. J; CARUSO, R.Journal of applied physics. 1989, Vol 66, Num 2, pp 663-665, issn 0021-8979, 3 p.Article

High quality silicon-based PZT thin films for memory applicationsSHAO, Tian-Qi; REN, Tian-Ling; WANG, Xiao-Ning et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 713-718, issn 0167-9317, 6 p.Conference Paper

Rapid dye-sensitized solar cell working electrode preparation using far infrared rapid thermal annealingWU, Chun-Te; KUO, Hsiu-Po; TSAI, Hung-An et al.Applied energy. 2012, Vol 100, pp 138-143, issn 0306-2619, 6 p.Conference Paper

Fluorine implantation effects on Ta2O5 dielectrics on polysilicon treated with post rapid thermal annealingHSIANG CHEN; CHYUAN HAUR KAO; BO YUN HUANG et al.Applied surface science. 2013, Vol 283, pp 694-698, issn 0169-4332, 5 p.Article

The sensitivity of thermal donor generation in silicon to self-interstitial sinksVORONKOV, V. V; VORONKOVA, G. I; BATUNINA, A. V et al.Journal of the Electrochemical Society. 2000, Vol 147, Num 10, pp 3899-3906, issn 0013-4651Article

Effect of rapid thermal annealing process on calcination of tin oxide powderHYANG HO SON; WON GYU LEE.Surface and interface analysis. 2012, Vol 44, Num 8, pp 989-992, issn 0142-2421, 4 p.Conference Paper

L10 FePt thin films with high coercivity and fine grain by rapid thermal annealing with high heating ramp rateCHEN, S. C; CHEN, S. P; KUO, P. C et al.Thin solid films. 2009, Vol 517, Num 17, pp 5176-5180, issn 0040-6090, 5 p.Conference Paper

Growth of oxide-mediated ternary silicide controlled by a Si cap layer by rapid thermal annealingXU, M; VANTOMME, A; VANORMELINGEN, K et al.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 3, pp 484-488, issn 1386-9477, 5 p.Article

Capacitance-voltage spectroscopy of post-growth annealed InAs quantum dotsREUTER, Dirk; ROESCU, Razvan; MEHTA, Minisha et al.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 6, pp 1961-1964, issn 1386-9477, 4 p.Conference Paper

Formation of germanium nanocrystals in thick silicon oxide matrix on silicon substrate under rapid thermal annealingCHOI, W. K; CHEW, H. G; HO, V et al.Journal of crystal growth. 2006, Vol 288, Num 1, pp 79-83, issn 0022-0248, 5 p.Conference Paper

Effect of rapid thermal annealing on photoluminescence and crystal structures of CdZnO filmsRUIJIE ZHANG; PEILIANG CHEN; YUANYUAN ZHANG et al.Journal of crystal growth. 2010, Vol 312, Num 12-13, pp 1908-1911, issn 0022-0248, 4 p.Article

Structural and electrical characterization of the nickel silicide films formed at 850 °C by rapid thermal annealing of the Ni/Si(100) filmsUTLU, G; ARTUNC, N; BUDAK, S et al.Applied surface science. 2010, Vol 256, Num 16, pp 5069-5075, issn 0169-4332, 7 p.Article

NiCuZn ferrite thin films grown by a sol-gel method and rapid thermal annealingFENG LIU; CHEN YANG; TIANLING REN et al.Journal of magnetism and magnetic materials. 2007, Vol 309, Num 1, pp 75-79, issn 0304-8853, 5 p.Article

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