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Temperature and process homogeneity control at low temperatures for rapid thermal technologiesNENYEI, Z; WALK, H.Praktische Metallographie. 1991, Vol 28, Num 6, pp 305-313, issn 0032-678XArticle

Application of ultra-rapid thermal annealing for electrical activation for next generation MOSFETsSUGURO, Kyoichi; ITO, Takayuki; NISHINOHARA, Kazumi et al.Proceedings - Electrochemical Society. 2004, pp 39-49, issn 0161-6374, isbn 1-56677-406-3, 11 p.Conference Paper

Spin-on glass curing by rapid thermal annealingUOOCHI, Y; TABUCHI, A; FURUMURA, Y et al.Journal of the Electrochemical Society. 1990, Vol 137, Num 12, pp 3923-3925, issn 0013-4651Article

Residual defects in high-energy B-, P- and As-implanted Si by rapid thermal annealingTAMURA, M; OHYU, K.Applied physics. A, Solids and surfaces. 1989, Vol 49, Num 2, pp 149-155, issn 0721-7250, 7 p.Article

Dose loss and diffusion in BF₂ implanted silicon during rapid thermal annealingDOKUMACI, Omer; RONSHEIM, Paul; HEGDE, Suri et al.Proceedings - Electrochemical Society. 2003, pp 105-110, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

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Sample geometry effects in rapid thermal annealingRUGGLES, G. A; HONG, S. N; WORTMAN, J. J et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1990, Vol 8, Num 2, pp 122-127, issn 0734-211X, 6 p.Article

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A study of nonequilibrium diffusion modeling-applications to rapid thermal annealing and advanced bipolar technologiesBACCUS, B; WADA, T; SHIGYO, N et al.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 3, pp 648-661, issn 0018-9383Article

Rapid thermal annealing of indium-implanted silicon single crystalsSHIRYAEV, S. YU; NYLANDSTED LARSEN, A; SAFRONOV, N et al.Journal of applied physics. 1989, Vol 65, Num 11, pp 4220-4224, issn 0021-8979, 5 p.Article

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Epitaxial growth of CoSi₂ on (111)Si inside miniature-size oxide openings by rapid thermal annealingHSU, H. F; CHEN, L. J; CHU, J. J et al.Journal of applied physics. 1991, Vol 69, Num 8, pp 4282-4285, issn 0021-8979, 1Article

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Charge collection microscopy of annealing induced electrically active defects in Si_1-×Ge_×/Si strained layer epitaxyTIMBRELL, P. Y; BARIBEAU, J.-M; LOXKWOOD, D. J et al.Journal of electronic materials. 1990, Vol 19, Num 7, pp 657-663, issn 0361-5235Article

Modeling of ultrahighly doped shallow junctions for aggressively scaled CMOSKENNEL, H. W; CEA, S. M; LILAK, A. D et al.IEDm : international electron devices meeting. 2002, pp 875-878, isbn 0-7803-7462-2, 4 p.Conference Paper

Rapid thermal annealed Cr barrier against Cu diffusionCHUANG, Jui-Chang; TU, Shuo-Lun; CHEN, Mao-Chieh et al.Journal of the Electrochemical Society. 1999, Vol 146, Num 7, pp 2643-2647, issn 0013-4651Article

Phosphorus pileup and sublimation at the silicon surfaceSATO, Y; IMAI, K; YABUMOTO, N et al.Journal of the Electrochemical Society. 1997, Vol 144, Num 7, pp 2548-2551, issn 0013-4651Article

Using wavelength-dependent emissivity of semiconductor wafer to model heat transfer in rapid thermal processing stationBELIKOV, S; MARTYNOV, H. M; KAPLINSKY, M et al.IEEE transactions on semiconductor manufacturing. 1995, Vol 8, Num 3, pp 360-362, issn 0894-6507Article

A study of titanium silicide formation by multiple arsenic-ion-implantationCHEN, P. C; LIN, J. Y; HWANG, H. L et al.Solid-state electronics. 1993, Vol 36, Num 5, pp 705-709, issn 0038-1101Article