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AB INITIO EFFECTIVE SPIN-ORBIT OPERATORS FOR USE IN ATOMIC AND MOLECULAR STRUCTURE CALCULATIONS. RESULTS FOR CARBON AND SILICONSTEVENS WJ; KRAUSS M.1982; CHEM. PHYS. LETT.; ISSN 0009-2614; NLD; DA. 1982; VOL. 86; NO 3; PP. 320-324; BIBL. 15 REF.Article

ICP SPECTRA. I: BACKGROUND EMISSIONFORSTER AR; ANDERSON TA; PARSONS ML et al.1982; APPL. SPECTROSC.; ISSN 0003-7028; USA; DA. 1982; VOL. 36; NO 5; PP. 499-504; BIBL. 16 REF.Article

ON EXACT HYDROGENIC COMPTON PROFILESMUKHOPADHYAYA S; RAY SN; TALUKDAR B et al.1982; J. CHEM. PHYS.; ISSN 0021-9606; USA; DA. 1982; VOL. 76; NO 5; PP. 2484-2491; BIBL. 19 REF.Article

AUGER ELECTRON EMISSION FROM SOLID SURFACES UNDER HEAVY-ION BOMBARDMENT = EMISSION ELECTRONIQUE AUGER DE SURFACES SOLIDES SOUS BOMBARDEMENT PAR DES IONS LOURDSSCHMIDT W; MULLER P; BRUCKNER V et al.1981; PHYS. REV. A; ISSN 0556-2791; USA; DA. 1981; VOL. 24; NO 5; PP. 2420-2424; BIBL. 19 REF.Article

COLLISIONAL QUENCHING OF ELECTRONICALLY EXCITED CARBON ATOMS, C(2P²(¹S₀))HUSAIN D; NEWTON DP.1982; FARADAY TRANS. 2; ISSN 0300-9238; GBR; DA. 1982; VOL. 78; NO 1; PP. 51-71; BIBL. 91 REF.Article

ON THE MECHANISMS OF SILICON ATOM ABSTRACTION REACTIONSSIEFERT EE; WITT SD; KUO LIANG LOH et al.1982; J. ORGANOMET. CHEM.; ISSN 0022-328X; CHE; DA. 1982; VOL. 239; NO 2; PP. 293-300; BIBL. 24 REF.Article

ON THE DYNAMICAL DESCRIPTION OF K-K CHARGE TRANSFER IN HIGHLY IONISED ION-ATOM COLLISION SYSTEMSFRITSCH W; LIN CD; TUNNELL LN et al.1981; J. PHYS. B; ISSN 0022-3700; GBR; DA. 1981; VOL. 14; NO 16; PP. 2861-2869; BIBL. 25 REF.Article

AN APPROXIMATE METHOD TO INCORPORATE SPIN-ORBIT EFFECTS INTO CALCULATIONS USING EFFECTIVE CORE POTENTIALSWADT WR.1982; CHEM. PHYS. LETT.; ISSN 0009-2614; NLD; DA. 1982; VOL. 89; NO 3; PP. 245-248; BIBL. 21 REF.Article

RECOIL CHEMISTRY AND MECHANISTIC STUDIES WITH POLYVALENT ATOMSGASPAR PP.1981; ADV. CHEM. SER.; ISSN 0065-2393; USA; DA. 1981; NO 197; PP. 3-31; BIBL. 134 REF.Conference Paper

THE SHAPE AND HAMILTONIAN CONSISTENT (SHC) EFFECTIVE POTENTIALSRAPPE AK; SMEDLEY TA; GODDARD WA III et al.1981; J. PHYS. CHEM.; ISSN 0022-3654; USA; DA. 1981; VOL. 85; NO 12; PP. 1662-1666; BIBL. DISSEM.Article

AVERAGE SATELLITE AND HYPERSATELLITE FLUORESCENCE YIELDSTUNNELL TW; BHALLA CP.1981; PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1981; VOL. 86; NO 1; PP. 13-16; BIBL. 8 REF.Article

UNUSUAL COMPOUNDS SYNTHESIZED VIA NUCLEAR RECOIL METHODSYI NUO TANG.1981; ADV. CHEM. SER.; ISSN 0065-2393; USA; DA. 1981; NO 197; PP. 53-66; BIBL. 65 REF.Conference Paper

The study of the radiative lifetimes of 3pnd ¹F₃ and 3pnd ³D₃ of Si ILIANG LIANG; JIANG, W. X; CHAO ZHOU et al.Optics communications. 2008, Vol 281, Num 8, pp 2107-2111, issn 0030-4018, 5 p.Article

A shock tube study of the reaction of Si atoms with HClKUNZ, A; ROTH, P.PCCP. Physical chemistry chemical physics (Print). 2000, Vol 2, Num 2, pp 221-226, issn 1463-9076Article

Measurements of ionization produced in silicon crystals by low-energy silicon atomsDOUGHERTY, B. L.Physical review. A. 1992, Vol 45, Num 3, pp 2104-2107, issn 1050-2947Article

Two-photon laser-induced fluroescence and 2+1 multiphoton ionization of silicon atomsBREWER, P. D.Chemical physics letters. 1987, Vol 136, Num 6, pp 557-561, issn 0009-2614Article

Theoretical study of the application of hollow atom production to the intensity measurement of short-pulse high-intensity x-ray sourcesMORIBAYASHI, Kengo; KAGAWA, Takashi; DONG EON KIM et al.Journal of physics. B. Atomic, molecular and optical physics (Print). 2004, Vol 37, Num 20, pp 4119-4126, issn 0953-4075, 8 p.Article

The 3s 3p 4p configurations in Al I and Si IIWILSON, M.Physica, B + C. 1983, Vol 122, Num 2, pp 282-288, issn 0378-4363Article

Energy levels of silicon, Si1 through Si XIVMARTIN, W. C; ZALUBAS, R.Journal of physical and chemical reference data. 1983, Vol 12, Num 2, pp 323-380, issn 0047-2689Article

A process simulation model for silicon ion implantation in undoped, LEC-grown GaAsBINDAL, A; WANG, K. L; CHANG, S. J et al.Journal of the Electrochemical Society. 1989, Vol 136, Num 8, pp 2414-2420, issn 0013-4651, 7 p.Article

ETUDE DE LA FUSION D'IONS LEGERS ET DE MASSE INTERMEDIAIRE ²⁴MG, ²⁸SI+¹²C; ²⁴MG+^24,26MG; ²⁸SI+²⁴MG; ²⁸SI+^28,29,30SIGARY ANNE SYLVIE.1981; ; FRA; DA. 1981; 172 P.; 30 CM; BIBL. DISSEM.; TH.: SCI. PHYS./PARIS 11/1981/2437Thesis

Lattice imaging study of in-depth disordering of Si-implanted GaAsVITALI, G; KALITZOVA, M; PASHOV, N et al.Applied physics. A, Solids and surfaces. 1988, Vol 46, Num 3, pp 185-190, issn 0721-7250Article

Correlation of spectral-line intensity-ratio fluctuations of different elementsTHELIN, B.Talanta (Oxford). 1988, Vol 35, Num 4, pp 317-319, issn 0039-9140Article

Chemiluminescence during thermal chemical vapour deposition of SiO₂ from silane-oxygen mixturesVAN DE WEIJER, P; ZWERVER, B. H; SUIJKER, J. L. G et al.Chemical physics letters. 1988, Vol 153, Num 1, pp 33-38, issn 0009-2614Article